BC547BTAR
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onsemi BC547BTAR

Manufacturer No:
BC547BTAR
Manufacturer:
onsemi
Package:
Tape & Box (TB)
Description:
TRANS NPN 45V 0.1A TO92-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC547BTAR is a bipolar junction transistor (BJT) produced by onsemi. It is an NPN transistor, meaning it has a negative-positive-negative configuration. This transistor is widely used in various electronic circuits due to its versatility and reliability. The BC547BTAR is available in the TO-92 package, making it suitable for a range of applications including small signal amplification and switching.

Key Specifications

ParameterValue
Transistor TypeNPN BJT
PackageTO-92
Collector-Base Voltage (Vcb)45V
Collector-Emitter Voltage (Vce)45V
Emitter-Base Voltage (Vbe)6V
Continuous Collector Current (Ic)100mA
Base Current (Ib)5mA (maximum)
DC Current Gain (hFE)110 to 800
Collector Dissipation0.3 W
Transition Frequency100 MHz
Operating Junction Temperature-65 to +175 °C
Noise Figure2-10 dB

Key Features

  • Bi-Polar NPN Transistor with high current gain (hFE) of up to 800.
  • Low base voltage of 6V and maximum base current of 5mA.
  • Continuous collector current of 100mA and collector-emitter voltage of 45V.
  • Available in TO-92 package, making it easy to integrate into various circuits.
  • High transition frequency of 100 MHz, suitable for high-frequency applications.
  • Operating junction temperature range of -65 to +175 °C, ensuring reliability in diverse environments.

Applications

The BC547BTAR transistor is versatile and can be used in a variety of applications:

  • Small Signal Amplification: Due to its high current gain, it is suitable for amplifying small signals in audio and other electronic circuits.
  • Switching: It can be used as a switch in digital circuits, operating in saturation and cut-off regions.
  • Pulse-Width Modulation (PWM): It can control the speed of motors or actuators by modulating the pulse width.
  • Current Amplifier: It can amplify current in various electronic projects.

Q & A

  1. What is the maximum collector current of the BC547BTAR transistor?
    The maximum collector current is 100mA.
  2. What is the maximum base current for the BC547BTAR transistor?
    The maximum base current is 5mA.
  3. What is the typical DC current gain (hFE) of the BC547BTAR transistor?
    The DC current gain (hFE) is between 110 and 800.
  4. In what package is the BC547BTAR transistor available?
    The BC547BTAR transistor is available in the TO-92 package.
  5. What is the maximum collector-emitter voltage (Vce) of the BC547BTAR transistor?
    The maximum collector-emitter voltage (Vce) is 45V.
  6. What are some common applications of the BC547BTAR transistor?
    Common applications include small signal amplification, switching, PWM, and current amplification.
  7. What is the operating junction temperature range of the BC547BTAR transistor?
    The operating junction temperature range is -65 to +175 °C.
  8. How does the BC547BTAR transistor operate as a switch?
    It operates in saturation and cut-off regions by supplying the required base current.
  9. What is the transition frequency of the BC547BTAR transistor?
    The transition frequency is 100 MHz.
  10. What is the collector dissipation of the BC547BTAR transistor?
    The collector dissipation is 0.3 W.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V
Power - Max:500 mW
Frequency - Transition:300MHz
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package:TO-92-3
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Similar Products

Part Number BC547BTAR BC547BTFR BC547CTAR BC548BTAR BC549BTAR BC547TAR BC546BTAR BC547ATAR BC547BTA
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Active
Transistor Type NPN NPN NPN NPN NPN NPN NPN NPN NPN
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V 45 V 30 V 30 V 45 V 65 V 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 5V 200 @ 2mA, 5V 420 @ 2mA, 5V 200 @ 2mA, 5V 200 @ 2mA, 5V 110 @ 2mA, 5V 200 @ 2mA, 5V 110 @ 2mA, 5V 200 @ 2mA, 5V
Power - Max 500 mW 500 mW 500 mW 500 mW 500 mW 500 mW 500 mW 500 mW 500 mW
Frequency - Transition 300MHz 300MHz 300MHz 300MHz 300MHz 300MHz 300MHz 300MHz 300MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package TO-92-3 TO-92-3 TO-92-3 TO-92-3 TO-92-3 TO-92-3 TO-92-3 TO-92-3 TO-92-3

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