Overview
The 2N5191G is a silicon NPN power transistor manufactured by onsemi. This transistor is designed for use in power amplifier and switching circuits, offering excellent safe area limits. It is part of a series that includes the 2N5190G and 2N5192G, each with different voltage ratings. The 2N5191G is RoHS compliant and lead-free, making it suitable for modern electronic designs.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | 60 | Vdc |
| Collector-Base Voltage | VCBO | 60 | Vdc |
| Emitter-Base Voltage | VEBO | 5.0 | Vdc |
| Collector Current | IC | 4.0 | Adc |
| Base Current | IB | 1.0 | Adc |
| Total Device Dissipation @ TC = 25°C | PD | 40 | W |
| Operating and Storage Junction Temperature Range | TJ, Tstg | –65 to +150 | °C |
| Thermal Resistance, Junction-to-Case | RJC | 3.12 | °C/W |
| DC Current Gain (IC = 1.5 Adc, VCE = 2.0 Vdc) | hFE | 25 | |
| Collector-Emitter Saturation Voltage (IC = 1.5 Adc, IB = 0.15 Adc) | VCE(sat) | 0.6 | Vdc |
| Base-Emitter On Voltage (IC = 1.5 Adc, VCE = 2.0 Vdc) | VBE(on) | 1.2 | Vdc |
Key Features
- Epoxy meets UL 94 V-0 @ 0.125 in.
- Pb-free and RoHS compliant.
- Excellent safe area limits.
- Complement to PNP transistors 2N5194 and 2N5195.
- High DC current gain.
- Low collector-emitter saturation voltage.
- High collector current and base current capabilities.
Applications
The 2N5191G transistor is suitable for various applications, including:
- Power amplifier circuits.
- Switching circuits.
- General-purpose power switching.
- Automotive and industrial control systems.
Q & A
- What is the maximum collector-emitter voltage for the 2N5191G transistor?
The maximum collector-emitter voltage (VCEO) for the 2N5191G transistor is 60 Vdc.
- Is the 2N5191G transistor RoHS compliant?
- What is the maximum collector current for the 2N5191G transistor?
The maximum collector current (IC) for the 2N5191G transistor is 4.0 Adc.
- What is the thermal resistance, junction-to-case, for the 2N5191G transistor?
The thermal resistance, junction-to-case (RJC), for the 2N5191G transistor is 3.12 °C/W.
- What are the operating and storage junction temperature ranges for the 2N5191G transistor?
The operating and storage junction temperature ranges for the 2N5191G transistor are –65 to +150 °C.
- What is the DC current gain for the 2N5191G transistor at IC = 1.5 Adc and VCE = 2.0 Vdc?
The DC current gain (hFE) for the 2N5191G transistor at IC = 1.5 Adc and VCE = 2.0 Vdc is 25.
- What is the collector-emitter saturation voltage for the 2N5191G transistor at IC = 1.5 Adc and IB = 0.15 Adc?
The collector-emitter saturation voltage (VCE(sat)) for the 2N5191G transistor at IC = 1.5 Adc and IB = 0.15 Adc is 0.6 Vdc.
- What is the base-emitter on voltage for the 2N5191G transistor at IC = 1.5 Adc and VCE = 2.0 Vdc?
The base-emitter on voltage (VBE(on)) for the 2N5191G transistor at IC = 1.5 Adc and VCE = 2.0 Vdc is 1.2 Vdc.
- In what types of circuits is the 2N5191G transistor typically used?
The 2N5191G transistor is typically used in power amplifier and switching circuits.
- What are some common applications for the 2N5191G transistor?
Common applications include general-purpose power switching, automotive control systems, and industrial control systems.
