2N5191
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STMicroelectronics 2N5191

Manufacturer No:
2N5191
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
TRANS NPN 60V 4A SOT32-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N5191 is a silicon epitaxial-base NPN transistor manufactured by STMicroelectronics. It is packaged in a Jedec SOT-32 plastic package, making it suitable for a variety of power switching applications. This transistor is known for its high current and voltage handling capabilities, making it a reliable choice for industrial and commercial use.

Key Specifications

ParameterValue
Transistor TypeNPN
Current - Collector (Ic) (Max)4 A
Voltage - Collector Emitter Breakdown (Max)60 V
Frequency (Max)2 MHz
Power Dissipation (Max)40 W
Package TypeThrough Hole SOT-32-3

Key Features

  • High current handling capability up to 4 A
  • High voltage handling capability up to 60 V
  • High frequency operation up to 2 MHz
  • High power dissipation up to 40 W
  • Epitaxial-base construction for improved performance
  • Jedec SOT-32 plastic package for reliability and ease of use

Applications

The 2N5191 transistor is suitable for various power switching applications, including but not limited to:

  • Power amplifiers
  • Switching circuits
  • Motor control systems
  • Industrial control systems
  • Commercial power supplies

Q & A

  1. What is the maximum collector current of the 2N5191 transistor?
    The maximum collector current of the 2N5191 transistor is 4 A.
  2. What is the maximum collector-emitter breakdown voltage of the 2N5191 transistor?
    The maximum collector-emitter breakdown voltage of the 2N5191 transistor is 60 V.
  3. What is the maximum frequency of operation for the 2N5191 transistor?
    The maximum frequency of operation for the 2N5191 transistor is 2 MHz.
  4. What is the power dissipation capability of the 2N5191 transistor?
    The power dissipation capability of the 2N5191 transistor is up to 40 W.
  5. What type of package does the 2N5191 transistor come in?
    The 2N5191 transistor comes in a Through Hole SOT-32-3 package.
  6. What are some common applications of the 2N5191 transistor?
    The 2N5191 transistor is commonly used in power amplifiers, switching circuits, motor control systems, industrial control systems, and commercial power supplies.
  7. Who manufactures the 2N5191 transistor?
    The 2N5191 transistor is manufactured by STMicroelectronics.
  8. What is the construction type of the 2N5191 transistor?
    The 2N5191 transistor has an epitaxial-base construction.
  9. Is the 2N5191 transistor suitable for high-power applications?
    Yes, the 2N5191 transistor is suitable for high-power applications due to its high current and voltage handling capabilities.
  10. Where can I find detailed specifications for the 2N5191 transistor?
    Detailed specifications for the 2N5191 transistor can be found on the datasheets available from STMicroelectronics, Digi-Key, and other authorized distributors.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):4 A
Voltage - Collector Emitter Breakdown (Max):60 V
Vce Saturation (Max) @ Ib, Ic:1.4V @ 1A, 4A
Current - Collector Cutoff (Max):1mA
DC Current Gain (hFE) (Min) @ Ic, Vce:25 @ 1.5A, 2V
Power - Max:40 W
Frequency - Transition:2MHz
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-225AA, TO-126-3
Supplier Device Package:SOT-32-3
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In Stock

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Same Series
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2N5192R
2N5192R
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Similar Products

Part Number 2N5191 2N5191G 2N5192 2N5195 2N5193 2N5194 2N5190
Manufacturer STMicroelectronics onsemi NTE Electronics, Inc NTE Electronics, Inc Solid State Inc. onsemi onsemi
Product Status Obsolete Active Active Active Active Obsolete Obsolete
Transistor Type NPN NPN NPN PNP PNP PNP NPN
Current - Collector (Ic) (Max) 4 A 4 A 4 A 4 A - 4 A 4 A
Voltage - Collector Emitter Breakdown (Max) 60 V 60 V 80 V 80 V - 60 V 40 V
Vce Saturation (Max) @ Ib, Ic 1.4V @ 1A, 4A 1.4V @ 1A, 4A 600mV @ 150mA, 1.5A 1.2V @ 1A, 4A - 600mV @ 150mA, 1.5A 1.4V @ 1A, 4A
Current - Collector Cutoff (Max) 1mA 1mA 1mA 1mA - 1mA 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 1.5A, 2V 25 @ 1.5A, 2V 20 @ 1.5A, 2V 20 @ 1.5A, 2V - 25 @ 1.5A, 2V 25 @ 1.5A, 2V
Power - Max 40 W 40 W 40 W 40 W - 40 W 40 W
Frequency - Transition 2MHz 2MHz 2MHz 2MHz - 2MHz 2MHz
Operating Temperature 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) 150°C (TJ) - -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3
Supplier Device Package SOT-32-3 TO-126 TO-126 SOT-32-3 TO-126 TO-126 TO-126

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