STP6NK90ZFP
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STMicroelectronics STP6NK90ZFP

Manufacturer No:
STP6NK90ZFP
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 900V 5.8A TO220FP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STP6NK90ZFP is a high-voltage N-channel Power MOSFET developed by STMicroelectronics using the advanced SuperMESH™ technology. This device is designed to offer high performance and reliability in various power management applications. It features a drain-source voltage (VDS) of 900 V, a typical on-resistance (RDS(on)) of 1.56 Ω, and a continuous drain current (ID) of 5.8 A at 25°C. The STP6NK90ZFP is available in the TO-220FP package, making it suitable for applications requiring high power handling and efficient thermal management.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDS) 900 V
Gate-Source Voltage (VGS) ±30 V
Continuous Drain Current (ID) at TC = 25°C 5.8 A
Continuous Drain Current (ID) at TC = 100°C 3.65 A
Pulsed Drain Current (IDM) 23.2 A
Total Dissipation at TC = 25°C 140 W
Peak Diode Recovery Voltage Slope (dv/dt) 4.5 V/ns
Operating Junction Temperature Range -55 to 150 °C
Static Drain-Source On Resistance (RDS(on)) at VGS = 10 V, ID = 2.9 A 1.56 Ω

Key Features

  • Extremely high dv/dt capability, making it suitable for demanding applications.
  • Minimized gate charge for efficient switching.
  • 100% avalanche tested to ensure robustness.
  • Very good manufacturing repeatability for consistent performance.
  • Very low intrinsic capacitances, reducing switching losses.
  • Zener-protected gate-source to enhance ESD performance and device integrity.

Applications

The STP6NK90ZFP is designed for various high-voltage switching applications, including:

  • Power supplies and converters.
  • Motor control and drives.
  • Industrial automation and control systems.
  • High-voltage DC-DC converters.
  • Uninterruptible Power Supplies (UPS) and other power management systems.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STP6NK90ZFP?

    The maximum drain-source voltage (VDS) is 900 V.

  2. What is the typical on-resistance (RDS(on)) of the STP6NK90ZFP?

    The typical on-resistance (RDS(on)) is 1.56 Ω at VGS = 10 V and ID = 2.9 A.

  3. What is the continuous drain current (ID) at 25°C for the STP6NK90ZFP?

    The continuous drain current (ID) at 25°C is 5.8 A.

  4. What is the operating junction temperature range for the STP6NK90ZFP?

    The operating junction temperature range is -55 to 150°C.

  5. Does the STP6NK90ZFP have built-in protection against ESD?

    Yes, it features built-in Zener-protected gate-source to enhance ESD performance.

  6. What is the peak diode recovery voltage slope (dv/dt) for the STP6NK90ZFP?

    The peak diode recovery voltage slope (dv/dt) is 4.5 V/ns.

  7. In what package is the STP6NK90ZFP available?

    The STP6NK90ZFP is available in the TO-220FP package.

  8. What are some typical applications for the STP6NK90ZFP?

    Typical applications include power supplies, motor control, industrial automation, high-voltage DC-DC converters, and UPS systems.

  9. Is the STP6NK90ZFP 100% avalanche tested?

    Yes, the STP6NK90ZFP is 100% avalanche tested.

  10. What is the total dissipation at TC = 25°C for the STP6NK90ZFP?

    The total dissipation at TC = 25°C is 140 W.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):900 V
Current - Continuous Drain (Id) @ 25°C:5.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2Ohm @ 2.9A, 10V
Vgs(th) (Max) @ Id:4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:60.5 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1350 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):30W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
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Similar Products

Part Number STP6NK90ZFP STP6NK60ZFP
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Not For New Designs
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900 V 600 V
Current - Continuous Drain (Id) @ 25°C 5.8A (Tc) 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 2Ohm @ 2.9A, 10V 1.2Ohm @ 3A, 10V
Vgs(th) (Max) @ Id 4.5V @ 100µA 4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 60.5 nC @ 10 V 46 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1350 pF @ 25 V 905 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 30W (Tc) 30W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220FP TO-220FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack

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