STW7NK90Z
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STMicroelectronics STW7NK90Z

Manufacturer No:
STW7NK90Z
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 900V 5.8A TO247-3
Delivery:
Payment:
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Product Introduction

Overview

The STW7NK90Z is a high-voltage N-channel Power MOSFET developed by STMicroelectronics using the advanced SuperMESH™ technology. This device is part of the SuperMESH™ series, which is an optimization of the well-established strip-based PowerMESH™ layout. The STW7NK90Z is designed to offer low on-resistance and high dv/dt capability, making it suitable for the most demanding applications.

Key Specifications

Parameter Value Unit
Drain-source voltage (VDS) 900 V
Gate-source voltage (VGS) ± 30 V
Drain current (continuous) at TC = 25 °C (ID) 5.8 A
Drain current (continuous) at TC = 100 °C (ID) 3.65 A
Drain current (pulsed) (IDM) 23.2 A
Total dissipation at TC = 25 °C (PTOT) 140 W
Peak diode recovery voltage slope (dv/dt) 4.5 V/ns
Insulation withstand voltage (RMS) from all three leads to external heat sink (VISO) 2500 V
Maximum operating junction temperature (Tj) -55 to 150 °C
Gate threshold voltage (VGS(th)) 3 to 4.5 V
Static drain-source on resistance (RDS(on)) 1.56 (typ.), 2 (max.) Ω

Key Features

  • Extremely high dv/dt capability, making it suitable for demanding applications.
  • 100% avalanche tested for reliability.
  • Gate charge minimized to reduce switching losses.
  • Very low intrinsic capacitances for improved performance.
  • Zener-protected to enhance ESD performance and eliminate the need for additional external components.
  • Very good manufacturing repeatability for consistent performance across devices.

Applications

The STW7NK90Z is primarily used in switching applications due to its high dv/dt capability and low on-resistance. It is suitable for a variety of high-power switching scenarios, including power supplies, motor control, and other high-voltage applications.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STW7NK90Z?

    The maximum drain-source voltage (VDS) is 900 V.

  2. What is the typical on-resistance (RDS(on)) of the STW7NK90Z?

    The typical on-resistance (RDS(on)) is 1.56 Ω.

  3. What is the maximum continuous drain current (ID) at 25 °C?

    The maximum continuous drain current (ID) at 25 °C is 5.8 A.

  4. What is the peak diode recovery voltage slope (dv/dt) of the STW7NK90Z?

    The peak diode recovery voltage slope (dv/dt) is 4.5 V/ns.

  5. What is the insulation withstand voltage (VISO) from all three leads to the external heat sink?

    The insulation withstand voltage (VISO) is 2500 V (RMS).

  6. What are the primary applications of the STW7NK90Z?

    The primary applications include switching applications, such as power supplies and motor control.

  7. What technology is used in the STW7NK90Z?

    The STW7NK90Z is developed using the SuperMESH™ technology.

  8. Is the STW7NK90Z Zener-protected?

    Yes, the STW7NK90Z is Zener-protected to enhance ESD performance.

  9. What are the available packages for the STW7NK90Z?

    The STW7NK90Z is available in TO-247, TO-220, TO-220FP, and D2PAK packages.

  10. What is the maximum operating junction temperature (Tj) of the STW7NK90Z?

    The maximum operating junction temperature (Tj) is 150 °C.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):900 V
Current - Continuous Drain (Id) @ 25°C:5.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2Ohm @ 2.9A, 10V
Vgs(th) (Max) @ Id:4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:60.5 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1350 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):140W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
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MOSFET N-CH 900V 5.8A D2PAK
STP6NK90ZFP
STP6NK90ZFP
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Similar Products

Part Number STW7NK90Z STW9NK90Z
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900 V 900 V
Current - Continuous Drain (Id) @ 25°C 5.8A (Tc) 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 2Ohm @ 2.9A, 10V 1.3Ohm @ 3.6A, 10V
Vgs(th) (Max) @ Id 4.5V @ 100µA 4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 60.5 nC @ 10 V 72 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1350 pF @ 25 V 2115 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 140W (Tc) 160W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247-3
Package / Case TO-247-3 TO-247-3

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