STW7NK90Z
  • Share:

STMicroelectronics STW7NK90Z

Manufacturer No:
STW7NK90Z
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 900V 5.8A TO247-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STW7NK90Z is a high-voltage N-channel Power MOSFET developed by STMicroelectronics using the advanced SuperMESH™ technology. This device is part of the SuperMESH™ series, which is an optimization of the well-established strip-based PowerMESH™ layout. The STW7NK90Z is designed to offer low on-resistance and high dv/dt capability, making it suitable for the most demanding applications.

Key Specifications

Parameter Value Unit
Drain-source voltage (VDS) 900 V
Gate-source voltage (VGS) ± 30 V
Drain current (continuous) at TC = 25 °C (ID) 5.8 A
Drain current (continuous) at TC = 100 °C (ID) 3.65 A
Drain current (pulsed) (IDM) 23.2 A
Total dissipation at TC = 25 °C (PTOT) 140 W
Peak diode recovery voltage slope (dv/dt) 4.5 V/ns
Insulation withstand voltage (RMS) from all three leads to external heat sink (VISO) 2500 V
Maximum operating junction temperature (Tj) -55 to 150 °C
Gate threshold voltage (VGS(th)) 3 to 4.5 V
Static drain-source on resistance (RDS(on)) 1.56 (typ.), 2 (max.) Ω

Key Features

  • Extremely high dv/dt capability, making it suitable for demanding applications.
  • 100% avalanche tested for reliability.
  • Gate charge minimized to reduce switching losses.
  • Very low intrinsic capacitances for improved performance.
  • Zener-protected to enhance ESD performance and eliminate the need for additional external components.
  • Very good manufacturing repeatability for consistent performance across devices.

Applications

The STW7NK90Z is primarily used in switching applications due to its high dv/dt capability and low on-resistance. It is suitable for a variety of high-power switching scenarios, including power supplies, motor control, and other high-voltage applications.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STW7NK90Z?

    The maximum drain-source voltage (VDS) is 900 V.

  2. What is the typical on-resistance (RDS(on)) of the STW7NK90Z?

    The typical on-resistance (RDS(on)) is 1.56 Ω.

  3. What is the maximum continuous drain current (ID) at 25 °C?

    The maximum continuous drain current (ID) at 25 °C is 5.8 A.

  4. What is the peak diode recovery voltage slope (dv/dt) of the STW7NK90Z?

    The peak diode recovery voltage slope (dv/dt) is 4.5 V/ns.

  5. What is the insulation withstand voltage (VISO) from all three leads to the external heat sink?

    The insulation withstand voltage (VISO) is 2500 V (RMS).

  6. What are the primary applications of the STW7NK90Z?

    The primary applications include switching applications, such as power supplies and motor control.

  7. What technology is used in the STW7NK90Z?

    The STW7NK90Z is developed using the SuperMESH™ technology.

  8. Is the STW7NK90Z Zener-protected?

    Yes, the STW7NK90Z is Zener-protected to enhance ESD performance.

  9. What are the available packages for the STW7NK90Z?

    The STW7NK90Z is available in TO-247, TO-220, TO-220FP, and D2PAK packages.

  10. What is the maximum operating junction temperature (Tj) of the STW7NK90Z?

    The maximum operating junction temperature (Tj) is 150 °C.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):900 V
Current - Continuous Drain (Id) @ 25°C:5.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2Ohm @ 2.9A, 10V
Vgs(th) (Max) @ Id:4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:60.5 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1350 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):140W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
0 Remaining View Similar

In Stock

$4.34
93

Please send RFQ , we will respond immediately.

Same Series
STP6NK90Z
STP6NK90Z
MOSFET N-CH 900V 5.8A TO220AB
STB6NK90ZT4
STB6NK90ZT4
MOSFET N-CH 900V 5.8A D2PAK
STP6NK90ZFP
STP6NK90ZFP
MOSFET N-CH 900V 5.8A TO220FP

Similar Products

Part Number STW7NK90Z STW9NK90Z
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900 V 900 V
Current - Continuous Drain (Id) @ 25°C 5.8A (Tc) 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 2Ohm @ 2.9A, 10V 1.3Ohm @ 3.6A, 10V
Vgs(th) (Max) @ Id 4.5V @ 100µA 4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 60.5 nC @ 10 V 72 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1350 pF @ 25 V 2115 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 140W (Tc) 160W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247-3
Package / Case TO-247-3 TO-247-3

Related Product By Categories

STP20NM50
STP20NM50
STMicroelectronics
MOSFET N-CH 500V 20A TO220AB
2N7002HSX
2N7002HSX
Nexperia USA Inc.
2N7002HS/SOT363/SC-88
STF4N80K5
STF4N80K5
STMicroelectronics
MOSFET N-CH 800V 3A TO220FP
STWA88N65M5
STWA88N65M5
STMicroelectronics
MOSFET N-CH 650V 84A TO247
STD9N40M2
STD9N40M2
STMicroelectronics
MOSFET N-CH 400V 6A DPAK
STD4NK60ZT4
STD4NK60ZT4
STMicroelectronics
MOSFET N-CH 600V 4A DPAK
STF5N95K5
STF5N95K5
STMicroelectronics
MOSFET N-CH 950V 3.5A TO220FP
PMV50XP215
PMV50XP215
NXP USA Inc.
P-CHANNEL MOSFET
BSS138K
BSS138K
onsemi
MOSFET N-CH 50V 220MA SOT23-3
NVMFS6H852NLT1G
NVMFS6H852NLT1G
onsemi
MOSFET N-CH 80V 11A/42A 5DFN
NDUL03N150CG
NDUL03N150CG
onsemi
MOSFET N-CH 1500V 2.5A TO3P
BSS84-7
BSS84-7
Diodes Incorporated
MOSFET P-CH 50V 130MA SOT23-3

Related Product By Brand

SM15T75AY
SM15T75AY
STMicroelectronics
TVS DIODE 64.1VWM 134VC SMC
STTH30L06G-TR
STTH30L06G-TR
STMicroelectronics
DIODE GEN PURP 600V 30A D2PAK
STM32L451RET6
STM32L451RET6
STMicroelectronics
IC MCU 32BIT 512KB FLASH 64LQFP
STM32G474CBT6
STM32G474CBT6
STMicroelectronics
IC MCU 32BIT 128KB FLASH 48LQFP
STM32L476VGT6U
STM32L476VGT6U
STMicroelectronics
IC MCU 32BIT 1MB FLASH 100LQFP
TDA2822M
TDA2822M
STMicroelectronics
IC AMP AB MONO/STER 2W 8MINI DIP
LM293N
LM293N
STMicroelectronics
IC COMPARATOR LP DUAL 8-DIP
M68AW512ML70ND6
M68AW512ML70ND6
STMicroelectronics
IC SRAM 8MBIT PARALLEL 44TSOP II
L6375S
L6375S
STMicroelectronics
IC PWR SWITCH N-CHAN 1:1 8SOIC
VN5E025AJ-E
VN5E025AJ-E
STMicroelectronics
IC PWR SWTCH N-CHAN 1:1 PWRSSO12
VND5T035AK-E
VND5T035AK-E
STMicroelectronics
IC PWR DRVR N-CHAN 1:1 PWRSSO24
AIS326DQ
AIS326DQ
STMicroelectronics
ACCEL 2-6G I2C/SPI 28QFPN