STW9NK90Z
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STMicroelectronics STW9NK90Z

Manufacturer No:
STW9NK90Z
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 900V 8A TO247-3
Delivery:
Payment:
iso14001
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Product Introduction

Overview

The STW9NK90Z is a high-performance N-channel power MOSFET from STMicroelectronics, part of the SuperMESH series. This device is optimized from STMicroelectronics' well-established strip-based PowerMESH layout, offering significantly lower on-resistance and excellent dv/dt capability, making it suitable for demanding applications. The SuperMESH series complements ST's full range of high voltage power MOSFETs, providing a broad spectrum of breakdown voltages from 100 V to 1700 V.

Key Specifications

Parameter Value
Type of Transistor MOSFET
Type of Control Channel N-Channel
Maximum Drain-Source Voltage (Vds) 900 V
Maximum Gate-Source Voltage (Vgs) 30 V
Maximum Gate-Threshold Voltage (Vgs(th)) 4.5 V
Maximum Drain Current (Id) 8 A
Maximum Junction Temperature (Tj) 150 °C
Maximum Power Dissipation (Pd) 160 W
Total Gate Charge (Qg) 72 nC
Rise Time (tr) 13 nS
Output Capacitance (Coss) 190 pF
Maximum Drain-Source On-State Resistance (Rds(on)) 1.3 Ohm (typ. 1.1 Ohm)
Package TO-247

Key Features

  • Extremely high dv/dt capability
  • Gate charge minimized
  • 100% avalanche tested
  • Zener-protected SuperMESH technology
  • Low on-resistance (Rds(on))
  • Robust device performance with minimal lot-to-lot variations

Applications

The STW9NK90Z is designed for various high-power applications, including:

  • Motor drives
  • DC-DC converters
  • Power switches
  • Solenoid drives

Q & A

  1. What is the maximum drain-source voltage of the STW9NK90Z?

    The maximum drain-source voltage (Vds) is 900 V.

  2. What is the typical on-state resistance (Rds(on)) of the STW9NK90Z?

    The typical on-state resistance (Rds(on)) is 1.1 Ohm.

  3. What is the maximum drain current (Id) of the STW9NK90Z?

    The maximum drain current (Id) is 8 A.

  4. What package type is the STW9NK90Z available in?

    The STW9NK90Z is available in the TO-247 package.

  5. What are some key features of the STW9NK90Z?

    Key features include extremely high dv/dt capability, minimized gate charge, and 100% avalanche testing.

  6. What are the typical applications for the STW9NK90Z?

    Typical applications include motor drives, DC-DC converters, power switches, and solenoid drives.

  7. What is the maximum junction temperature (Tj) of the STW9NK90Z?

    The maximum junction temperature (Tj) is 150 °C.

  8. What is the maximum power dissipation (Pd) of the STW9NK90Z?

    The maximum power dissipation (Pd) is 160 W.

  9. Is the STW9NK90Z RoHS compliant?

    Yes, the STW9NK90Z is RoHS compliant with an Ecopack2 grade.

  10. Where can I find EDA symbols, footprints, and 3D models for the STW9NK90Z?

    You can download EDA symbols, footprints, and 3D models from the STMicroelectronics website.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):900 V
Current - Continuous Drain (Id) @ 25°C:8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.3Ohm @ 3.6A, 10V
Vgs(th) (Max) @ Id:4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:72 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:2115 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):160W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
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Same Series
STW9NK90Z
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MOSFET N-CH 900V 8A TO247-3
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STF9NK90Z
STF9NK90Z
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Similar Products

Part Number STW9NK90Z STW9NK95Z STW7NK90Z STW9NK70Z
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900 V 950 V 900 V 700 V
Current - Continuous Drain (Id) @ 25°C 8A (Tc) 7A (Tc) 5.8A (Tc) 7.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 1.3Ohm @ 3.6A, 10V 1.38Ohm @ 3.6A, 10V 2Ohm @ 2.9A, 10V 1.2Ohm @ 4A, 10V
Vgs(th) (Max) @ Id 4.5V @ 100µA 4.5V @ 100µA 4.5V @ 100µA 4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 72 nC @ 10 V 56 nC @ 10 V 60.5 nC @ 10 V 68 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 2115 pF @ 25 V 2256 pF @ 25 V 1350 pF @ 25 V 1370 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 160W (Tc) 160W (Tc) 140W (Tc) 156W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247-3 TO-247-3 TO-247-3
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3

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