STW9NK90Z
  • Share:

STMicroelectronics STW9NK90Z

Manufacturer No:
STW9NK90Z
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 900V 8A TO247-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STW9NK90Z is a high-performance N-channel power MOSFET from STMicroelectronics, part of the SuperMESH series. This device is optimized from STMicroelectronics' well-established strip-based PowerMESH layout, offering significantly lower on-resistance and excellent dv/dt capability, making it suitable for demanding applications. The SuperMESH series complements ST's full range of high voltage power MOSFETs, providing a broad spectrum of breakdown voltages from 100 V to 1700 V.

Key Specifications

Parameter Value
Type of Transistor MOSFET
Type of Control Channel N-Channel
Maximum Drain-Source Voltage (Vds) 900 V
Maximum Gate-Source Voltage (Vgs) 30 V
Maximum Gate-Threshold Voltage (Vgs(th)) 4.5 V
Maximum Drain Current (Id) 8 A
Maximum Junction Temperature (Tj) 150 °C
Maximum Power Dissipation (Pd) 160 W
Total Gate Charge (Qg) 72 nC
Rise Time (tr) 13 nS
Output Capacitance (Coss) 190 pF
Maximum Drain-Source On-State Resistance (Rds(on)) 1.3 Ohm (typ. 1.1 Ohm)
Package TO-247

Key Features

  • Extremely high dv/dt capability
  • Gate charge minimized
  • 100% avalanche tested
  • Zener-protected SuperMESH technology
  • Low on-resistance (Rds(on))
  • Robust device performance with minimal lot-to-lot variations

Applications

The STW9NK90Z is designed for various high-power applications, including:

  • Motor drives
  • DC-DC converters
  • Power switches
  • Solenoid drives

Q & A

  1. What is the maximum drain-source voltage of the STW9NK90Z?

    The maximum drain-source voltage (Vds) is 900 V.

  2. What is the typical on-state resistance (Rds(on)) of the STW9NK90Z?

    The typical on-state resistance (Rds(on)) is 1.1 Ohm.

  3. What is the maximum drain current (Id) of the STW9NK90Z?

    The maximum drain current (Id) is 8 A.

  4. What package type is the STW9NK90Z available in?

    The STW9NK90Z is available in the TO-247 package.

  5. What are some key features of the STW9NK90Z?

    Key features include extremely high dv/dt capability, minimized gate charge, and 100% avalanche testing.

  6. What are the typical applications for the STW9NK90Z?

    Typical applications include motor drives, DC-DC converters, power switches, and solenoid drives.

  7. What is the maximum junction temperature (Tj) of the STW9NK90Z?

    The maximum junction temperature (Tj) is 150 °C.

  8. What is the maximum power dissipation (Pd) of the STW9NK90Z?

    The maximum power dissipation (Pd) is 160 W.

  9. Is the STW9NK90Z RoHS compliant?

    Yes, the STW9NK90Z is RoHS compliant with an Ecopack2 grade.

  10. Where can I find EDA symbols, footprints, and 3D models for the STW9NK90Z?

    You can download EDA symbols, footprints, and 3D models from the STMicroelectronics website.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):900 V
Current - Continuous Drain (Id) @ 25°C:8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.3Ohm @ 3.6A, 10V
Vgs(th) (Max) @ Id:4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:72 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:2115 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):160W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
0 Remaining View Similar

In Stock

$4.58
211

Please send RFQ , we will respond immediately.

Same Series
STW9NK90Z
STW9NK90Z
MOSFET N-CH 900V 8A TO247-3
STB9NK90Z
STB9NK90Z
MOSFET N-CH 900V 8A D2PAK
STF9NK90Z
STF9NK90Z
MOSFET N-CH 900V 8A TO220FP

Similar Products

Part Number STW9NK90Z STW9NK95Z STW7NK90Z STW9NK70Z
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900 V 950 V 900 V 700 V
Current - Continuous Drain (Id) @ 25°C 8A (Tc) 7A (Tc) 5.8A (Tc) 7.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 1.3Ohm @ 3.6A, 10V 1.38Ohm @ 3.6A, 10V 2Ohm @ 2.9A, 10V 1.2Ohm @ 4A, 10V
Vgs(th) (Max) @ Id 4.5V @ 100µA 4.5V @ 100µA 4.5V @ 100µA 4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 72 nC @ 10 V 56 nC @ 10 V 60.5 nC @ 10 V 68 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 2115 pF @ 25 V 2256 pF @ 25 V 1350 pF @ 25 V 1370 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 160W (Tc) 160W (Tc) 140W (Tc) 156W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247-3 TO-247-3 TO-247-3
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3

Related Product By Categories

CSD17484F4
CSD17484F4
Texas Instruments
MOSFET N-CH 30V 3A 3PICOSTAR
NTS4173PT1G
NTS4173PT1G
onsemi
MOSFET P-CH 30V 1.2A SC70-3
FDD86567-F085
FDD86567-F085
onsemi
MOSFET N-CH 60V 100A DPAK
NTLUS3A18PZTAG
NTLUS3A18PZTAG
onsemi
MOSFET P-CH 20V 5.1A 6UDFN
BUK9M24-40EX
BUK9M24-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 30A LFPAK33
NTMFS6H818NT1G
NTMFS6H818NT1G
onsemi
MOSFET N-CH 80V 20A/123A 5DFN
STP11NK40Z
STP11NK40Z
STMicroelectronics
MOSFET N-CH 400V 9A TO220AB
STL36N55M5
STL36N55M5
STMicroelectronics
MOSFET N-CH 550V 22.5A 4PWRFLAT
PMV50XP215
PMV50XP215
NXP USA Inc.
P-CHANNEL MOSFET
NX7002AKVL
NX7002AKVL
Nexperia USA Inc.
MOSFET N-CH 60V 190MA TO236AB
STF38N65M5
STF38N65M5
STMicroelectronics
MOSFET N-CH 650V 30A TO220FP
BSS84TC
BSS84TC
Diodes Incorporated
MOSFET P-CH 50V 130MA SOT23-3

Related Product By Brand

SMA6T28CAY
SMA6T28CAY
STMicroelectronics
TVS DIODE 24VWM 44.3VC SMA
ESDA6V1-5SC6Y
ESDA6V1-5SC6Y
STMicroelectronics
TVS DIODE 5.2VWM 11.4VC SOT23-6
SM6T24CAY
SM6T24CAY
STMicroelectronics
TVS DIODE 20.5VWM 42.8VC SMB
STTH1002CG
STTH1002CG
STMicroelectronics
DIODE ARRAY GP 200V 8A D2PAK
STTH30AC06FP
STTH30AC06FP
STMicroelectronics
DIODE GEN PURP 600V 30A TO220
X0202MN 5BA4
X0202MN 5BA4
STMicroelectronics
SCR 600V 1.25A SOT223
STL225N6F7AG
STL225N6F7AG
STMicroelectronics
MOSFET N-CH 60V 120A POWERFLAT
STL160N4F7
STL160N4F7
STMicroelectronics
MOSFET N-CH 40V 120A POWERFLAT
STM32L412CBU6
STM32L412CBU6
STMicroelectronics
IC MCU 32BIT 128KB FLSH 48UFQFPN
STM32F103T6U6A
STM32F103T6U6A
STMicroelectronics
IC MCU 32BIT 32KB FLASH 36VFQFPN
SPC58EC80E5EMC0X
SPC58EC80E5EMC0X
STMicroelectronics
IC MCU 32BIT 4MB FLASH 144ETQFP
VIPER100(022Y)
VIPER100(022Y)
STMicroelectronics
IC OFFLIN CONV FLBACK 5PENTAWATT