STB9NK90Z
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STMicroelectronics STB9NK90Z

Manufacturer No:
STB9NK90Z
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 900V 8A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STB9NK90Z is a high-voltage N-channel Power MOSFET from STMicroelectronics, part of the SuperMESH™ series. This device is optimized from STMicroelectronics' well-established strip-based PowerMESH™ layout, offering significantly lower on-resistance and excellent dv/dt capability. The STB9NK90Z is designed for demanding applications, particularly in switching environments, and is available in various packages including TO-220, D²PAK, and TO-247.

Key Specifications

ParameterValueUnit
Drain-Source Voltage (VDS)900V
Gate-Source Voltage (VGS)±30V
Continuous Drain Current (ID) at TC = 25 °C8A
Continuous Drain Current (ID) at TC = 100 °C5A
Pulsed Drain Current (IDM)32A
Total Dissipation at TC = 25 °C160W
Static Drain-Source On Resistance (RDS(on))1.1 - 1.3
Gate Threshold Voltage (VGS(th))3 - 4.5V
Turn-On Delay Time (td(on))22ns
Turn-Off Delay Time (td(off))55ns
Rise Time (tr)13ns
Fall Time (tf)28ns

Key Features

  • Extremely high dv/dt capability, making it suitable for demanding applications.
  • 100% avalanche tested, ensuring robustness against high-energy pulses.
  • Minimized gate charge, reducing switching losses and improving efficiency.
  • Built-in back-to-back Zener diodes for enhanced ESD protection and to safely absorb voltage transients.
  • Available in various packages: TO-220, D²PAK, and TO-247, offering flexibility in design.

Applications

The STB9NK90Z is primarily used in switching applications due to its high voltage and current handling capabilities. It is suitable for a wide range of applications, including:

  • Power supplies and converters.
  • Motor control and drives.
  • Industrial automation.
  • High-voltage DC-DC converters.

Q & A

  1. What is the maximum drain-source voltage of the STB9NK90Z?
    The maximum drain-source voltage (VDS) is 900 V.
  2. What are the continuous and pulsed drain current ratings?
    The continuous drain current (ID) is 8 A at TC = 25 °C and 5 A at TC = 100 °C. The pulsed drain current (IDM) is 32 A.
  3. What is the static drain-source on resistance (RDS(on)) of the STB9NK90Z?
    The RDS(on) is between 1.1 Ω and 1.3 Ω.
  4. What is the gate threshold voltage (VGS(th)) range?
    The VGS(th) range is between 3 V and 4.5 V.
  5. Does the STB9NK90Z have built-in ESD protection?
    Yes, it has built-in back-to-back Zener diodes for enhanced ESD protection.
  6. What are the typical turn-on and turn-off delay times?
    The turn-on delay time (td(on)) is 22 ns, and the turn-off delay time (td(off)) is 55 ns.
  7. In what packages is the STB9NK90Z available?
    The STB9NK90Z is available in TO-220, D²PAK, and TO-247 packages.
  8. What is the total dissipation at TC = 25 °C?
    The total dissipation (PTOT) at TC = 25 °C is 160 W.
  9. Is the STB9NK90Z 100% avalanche tested?
    Yes, the STB9NK90Z is 100% avalanche tested.
  10. What are some common applications for the STB9NK90Z?
    Common applications include power supplies, motor control, industrial automation, and high-voltage DC-DC converters.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):900 V
Current - Continuous Drain (Id) @ 25°C:8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.3Ohm @ 3.6A, 10V
Vgs(th) (Max) @ Id:4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:72 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:2115 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):160W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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MOSFET N-CH 900V 8A TO247-3
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STB9NK90Z
MOSFET N-CH 900V 8A D2PAK
STP9NK90Z
STP9NK90Z
MOSFET N-CH 900V 8A TO220AB

Similar Products

Part Number STB9NK90Z STB9NK80Z
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900 V 800 V
Current - Continuous Drain (Id) @ 25°C 8A (Tc) 5.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 1.3Ohm @ 3.6A, 10V 1.8Ohm @ 2.6A, 10V
Vgs(th) (Max) @ Id 4.5V @ 100µA 4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 72 nC @ 10 V 40 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 2115 pF @ 25 V 1138 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 160W (Tc) 125W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package D2PAK D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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