STF9NK90Z
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STMicroelectronics STF9NK90Z

Manufacturer No:
STF9NK90Z
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 900V 8A TO220FP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STF9NK90Z is a high-voltage N-channel Power MOSFET from STMicroelectronics, part of the SuperMESH™ series. This device is optimized from ST's well-established strip-based PowerMESH™ layout, offering enhanced performance and reliability. The STF9NK90Z is designed for high-voltage applications, featuring a drain-source voltage (VDS) of 900 V, a low on-resistance (RDS(on)) of 1.3 Ω, and a continuous drain current (ID) of 8 A. It is available in the TO-220FP package, making it suitable for a variety of power management and switching applications.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDS) 900 V
Gate-Source Voltage (VGS) ±30 V
Continuous Drain Current (ID) at TC = 25 °C 8 A
Continuous Drain Current (ID) at TC = 100 °C 5 A
Pulsed Drain Current (IDM) 32 A
Total Dissipation at TC = 25 °C 40 W
Static Drain-Source On Resistance (RDS(on)) 1.3
Gate Threshold Voltage (VGS(th)) 3 - 4.5 V
Turn-On Delay Time (td(on)) 22 ns ns
Turn-Off Delay Time (td(off)) 55 ns ns

Key Features

  • Extremely high dv/dt capability, making it suitable for demanding applications.
  • 100% avalanche tested to ensure reliability under extreme conditions.
  • Minimized gate charge for efficient switching.
  • Built-in back-to-back Zener diodes to enhance ESD capability and protect against voltage transients.
  • Low on-resistance (RDS(on)) of 1.3 Ω for reduced power losses.
  • Available in the TO-220FP package, offering good thermal dissipation and ease of use.

Applications

The STF9NK90Z is designed for various high-voltage switching applications, including:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • High-voltage industrial and automotive systems.
  • Switch-mode power supplies and inverters.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STF9NK90Z?

    The maximum drain-source voltage (VDS) is 900 V.

  2. What is the continuous drain current (ID) at 25 °C for the STF9NK90Z?

    The continuous drain current (ID) at 25 °C is 8 A.

  3. What is the typical on-resistance (RDS(on)) of the STF9NK90Z?

    The typical on-resistance (RDS(on)) is 1.3 Ω.

  4. What is the purpose of the built-in Zener diodes in the STF9NK90Z?

    The built-in Zener diodes enhance ESD capability and protect against voltage transients.

  5. In which package is the STF9NK90Z available?

    The STF9NK90Z is available in the TO-220FP package.

  6. What are some typical applications for the STF9NK90Z?

    Typical applications include power supplies, motor control systems, high-voltage industrial and automotive systems, and switch-mode power supplies.

  7. What is the maximum gate-source voltage (VGS) for the STF9NK90Z?

    The maximum gate-source voltage (VGS) is ±30 V.

  8. What is the turn-on delay time (td(on)) for the STF9NK90Z?

    The turn-on delay time (td(on)) is typically 22 ns.

  9. What is the total dissipation at 25 °C for the STF9NK90Z?

    The total dissipation at 25 °C is 40 W.

  10. Is the STF9NK90Z 100% avalanche tested?

    Yes, the STF9NK90Z is 100% avalanche tested.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):900 V
Current - Continuous Drain (Id) @ 25°C:8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.3Ohm @ 3.6A, 10V
Vgs(th) (Max) @ Id:4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:72 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:2115 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):40W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
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STF9NK90Z
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Similar Products

Part Number STF9NK90Z STF9NK80Z
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900 V 800 V
Current - Continuous Drain (Id) @ 25°C 8A (Tc) 7.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 1.3Ohm @ 3.6A, 10V 1.2Ohm @ 3.75A, 10V
Vgs(th) (Max) @ Id 4.5V @ 100µA 4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 72 nC @ 10 V 84 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 2115 pF @ 25 V 1900 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 40W (Tc) 35W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220FP TO-220FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack

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