NX3008NBKT,115
  • Share:

NXP USA Inc. NX3008NBKT,115

Manufacturer No:
NX3008NBKT,115
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 350MA SC75
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NX3008NBKW,115 is an N-channel enhancement mode Field-Effect Transistor (FET) manufactured by Nexperia. It is part of the TrenchMOS FET family and is packaged in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. This MOSFET is designed for high-speed switching applications and offers several key benefits, including very fast switching times, low threshold voltage, and ESD protection up to 2 kV.

Key Specifications

Parameter Conditions Min Typ Max Unit
Drain-to-Source Voltage (Vdss) Tj = 25 °C - - 30 V
Drain-Source On Resistance (Rds(on)) Vgs = 4.5 V; Id = 350 mA - - 1.4 Ω
Rated Power Dissipation - - - 260 mW
Gate Charge (Qg) - - - 0.52 nC
Gate-Source Voltage (Vgss) - -8 - 8 V
Drain Current (Id) Vgs = 4.5 V - - 350 mA
Turn-on Delay Time Vds = 20 V; Rl = 250 Ω; Vgs = 4.5 V; Rg(ext) = 6 Ω; Tj = 25 °C - 15 30 ns
Turn-off Delay Time Vds = 20 V; Rl = 250 Ω; Vgs = 4.5 V; Rg(ext) = 6 Ω; Tj = 25 °C - 69 138 ns
Rise Time Vds = 20 V; Rl = 250 Ω; Vgs = 4.5 V; Rg(ext) = 6 Ω; Tj = 25 °C - 11 - ns
Fall Time Vds = 20 V; Rl = 250 Ω; Vgs = 4.5 V; Rg(ext) = 6 Ω; Tj = 25 °C - 19 - ns
Operating Temperature Range - -55 - 150 °C
Gate Source Threshold (Vgs(th)) Id = 250 µA; Vds = Vgs; Tj = 25 °C 0.6 0.9 1.1 V
Input Capacitance (Ciss) Vds = 15 V; f = 1 MHz; Vgs = 0 V; Tj = 25 °C - 34 50 pF
Package Style - - - SOT-323 (SC-70) -
Mounting Method - - - Surface Mount -

Key Features

  • Very Fast Switching: The NX3008NBKW,115 features fast switching times, making it suitable for high-speed applications.
  • Low Threshold Voltage: With a gate-source threshold voltage as low as 0.6 V, this MOSFET is efficient in low-voltage systems.
  • Trench MOSFET Technology: Utilizes advanced Trench MOSFET technology for improved performance and efficiency.
  • ESD Protection: Offers ESD protection up to 2 kV, enhancing the component's reliability in harsh environments.
  • AEC-Q101 Qualified: Meets the AEC-Q101 standard, ensuring it is suitable for automotive applications.

Applications

  • Relay Driver: Ideal for driving relays due to its fast switching and low on-resistance.
  • High-Speed Line Driver: Suitable for high-speed line driving applications where fast switching is critical.
  • Low-Side Load Switch: Can be used as a low-side load switch in various power management circuits.
  • Switching Circuits: General-purpose switching in electronic circuits.

Q & A

  1. What is the drain-to-source voltage rating of the NX3008NBKW,115?

    The drain-to-source voltage rating is 30 V.

  2. What is the maximum drain current of the NX3008NBKW,115?

    The maximum drain current is 350 mA.

  3. What is the typical on-resistance of the NX3008NBKW,115?

    The typical on-resistance is 1.4 Ω at Vgs = 4.5 V and Id = 350 mA.

  4. What is the gate-source threshold voltage of the NX3008NBKW,115?

    The gate-source threshold voltage is between 0.6 V and 1.1 V.

  5. Does the NX3008NBKW,115 have ESD protection?

    Yes, it offers ESD protection up to 2 kV.

  6. What is the operating temperature range of the NX3008NBKW,115?

    The operating temperature range is from -55 °C to 150 °C.

  7. What package type is the NX3008NBKW,115 available in?

    The component is packaged in a SOT-323 (SC-70) surface-mounted package.

  8. Is the NX3008NBKW,115 AEC-Q101 qualified?

    Yes, it is AEC-Q101 qualified, making it suitable for automotive applications.

  9. What are some typical applications of the NX3008NBKW,115?

    Typical applications include relay drivers, high-speed line drivers, low-side load switches, and general switching circuits.

  10. What is the turn-on delay time of the NX3008NBKW,115?

    The turn-on delay time is typically 15 ns.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:350mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:1.4Ohm @ 350mA, 4.5V
Vgs(th) (Max) @ Id:1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.68 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):250mW (Ta), 770mW (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SC-75
Package / Case:SC-75, SOT-416
0 Remaining View Similar

In Stock

-
607

Please send RFQ , we will respond immediately.

Same Series
DD15S2S5WV30/AA
DD15S2S5WV30/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S2S5WV5X/AA
DD15S2S5WV5X/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26M20LV5Z
DD26M20LV5Z
CONN D-SUB HD PLUG 26P SLDR CUP
DD44S320000
DD44S320000
CONN D-SUB HD RCPT 44P VERT SLDR
CBC13W3S10HT20/AA
CBC13W3S10HT20/AA
CONN D-SUB RCPT 13POS CRIMP
DD15S200V5S
DD15S200V5S
CONN D-SUB HD RCPT 15P SLDR CUP
DD44S32S60T20
DD44S32S60T20
CONN D-SUB HD RCPT 44P VERT SLDR
CBC47W1S1S50T20
CBC47W1S1S50T20
CONN D-SUB RCPT 47POS CRIMP
DD26S2000X
DD26S2000X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200V30
DD26S200V30
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S3200T2X
DD44S3200T2X
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S2S50V50
DD26S2S50V50
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number NX3008NBKT,115 NX3008NBKW,115 NX3008PBKT,115
Manufacturer NXP USA Inc. Nexperia USA Inc. NXP USA Inc.
Product Status Obsolete Active Obsolete
FET Type N-Channel N-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 350mA (Ta) 350mA (Ta) 200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 1.8V, 4.5V 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 1.4Ohm @ 350mA, 4.5V 1.4Ohm @ 350mA, 4.5V 4.1Ohm @ 200mA, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 250µA 1.1V @ 250µA 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.68 nC @ 4.5 V 0.68 nC @ 4.5 V 0.72 nC @ 4.5 V
Vgs (Max) ±8V ±8V ±8V
Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 15 V 50 pF @ 15 V 46 pF @ 15 V
FET Feature - - -
Power Dissipation (Max) 250mW (Ta), 770mW (Tc) 260mW (Ta), 830mW (Tc) 250mW (Ta), 770mW (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SC-75 SOT-323 SC-75
Package / Case SC-75, SOT-416 SC-70, SOT-323 SC-75, SOT-416

Related Product By Categories

BSN20BKR
BSN20BKR
Nexperia USA Inc.
MOSFET N-CH 60V 265MA TO236AB
FDMS86255ET150
FDMS86255ET150
onsemi
MOSFET N-CH 150V 10A/63A POWER56
FQD7P06TM
FQD7P06TM
onsemi
MOSFET P-CH 60V 5.4A DPAK
STL220N6F7
STL220N6F7
STMicroelectronics
MOSFET N-CH 60V 120A POWERFLAT
STP24NM60N
STP24NM60N
STMicroelectronics
MOSFET N-CH 600V 17A TO220
STF9N60M2
STF9N60M2
STMicroelectronics
MOSFET N-CH 600V 5.5A TO220FP
BUK762R6-60E,118
BUK762R6-60E,118
Nexperia USA Inc.
MOSFET N-CH 60V 120A D2PAK
BSH112,235
BSH112,235
NXP USA Inc.
MOSFET N-CH 60V 300MA TO236AB
FDN336P-NL
FDN336P-NL
onsemi
MOSFET P-CH 20V 1.3A SUPERSOT3
BSS84TC
BSS84TC
Diodes Incorporated
MOSFET P-CH 50V 130MA SOT23-3
BSS84PW
BSS84PW
Infineon Technologies
MOSFET P-CH 60V 150MA SOT323-3
MTB30P06VT4G
MTB30P06VT4G
onsemi
MOSFET P-CH 60V 30A D2PAK

Related Product By Brand

BZX84-C27/LF1VL
BZX84-C27/LF1VL
NXP USA Inc.
DIODE ZENER 27V 250MW TO236AB
BFU520VL
BFU520VL
NXP USA Inc.
RF TRANS NPN 12V 10.5GHZ SOT143B
PMBT3906/TE1215
PMBT3906/TE1215
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
AFT09MS007NT1
AFT09MS007NT1
NXP USA Inc.
FET RF 30V 870MHZ PLD1.5W
74LVC1GX04GW/C4125
74LVC1GX04GW/C4125
NXP USA Inc.
74LVC1GX04GW - CLOCK GENERATOR
S9S12G192F0VLHR
S9S12G192F0VLHR
NXP USA Inc.
IC MCU 16BIT 192KB FLASH 64LQFP
SPC5745CBK1AMMJ6
SPC5745CBK1AMMJ6
NXP USA Inc.
IC MCU 32BIT 2MB FLSH 256MAPPBGA
74HC4852D,112
74HC4852D,112
NXP USA Inc.
74HC4852D - DIFFERENTIAL MULTIP
UJA1075ATW/3V3WD,1
UJA1075ATW/3V3WD,1
NXP USA Inc.
IC INTFACE SPECIALIZED 32HTSSOP
BZX84J-C30115
BZX84J-C30115
NXP USA Inc.
NOW NEXPERIA BZX84J-C2V7 - ZENER
MMPF0200NPAEP557
MMPF0200NPAEP557
NXP USA Inc.
POWER SUPPLY SUPPORT CIRCUIT AD
NT3H2111W0FT1X
NT3H2111W0FT1X
NXP USA Inc.
IC RFID TRANSP 13.56MHZ 8SO