NX3008NBKT,115
  • Share:

NXP USA Inc. NX3008NBKT,115

Manufacturer No:
NX3008NBKT,115
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 350MA SC75
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NX3008NBKW,115 is an N-channel enhancement mode Field-Effect Transistor (FET) manufactured by Nexperia. It is part of the TrenchMOS FET family and is packaged in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. This MOSFET is designed for high-speed switching applications and offers several key benefits, including very fast switching times, low threshold voltage, and ESD protection up to 2 kV.

Key Specifications

Parameter Conditions Min Typ Max Unit
Drain-to-Source Voltage (Vdss) Tj = 25 °C - - 30 V
Drain-Source On Resistance (Rds(on)) Vgs = 4.5 V; Id = 350 mA - - 1.4 Ω
Rated Power Dissipation - - - 260 mW
Gate Charge (Qg) - - - 0.52 nC
Gate-Source Voltage (Vgss) - -8 - 8 V
Drain Current (Id) Vgs = 4.5 V - - 350 mA
Turn-on Delay Time Vds = 20 V; Rl = 250 Ω; Vgs = 4.5 V; Rg(ext) = 6 Ω; Tj = 25 °C - 15 30 ns
Turn-off Delay Time Vds = 20 V; Rl = 250 Ω; Vgs = 4.5 V; Rg(ext) = 6 Ω; Tj = 25 °C - 69 138 ns
Rise Time Vds = 20 V; Rl = 250 Ω; Vgs = 4.5 V; Rg(ext) = 6 Ω; Tj = 25 °C - 11 - ns
Fall Time Vds = 20 V; Rl = 250 Ω; Vgs = 4.5 V; Rg(ext) = 6 Ω; Tj = 25 °C - 19 - ns
Operating Temperature Range - -55 - 150 °C
Gate Source Threshold (Vgs(th)) Id = 250 µA; Vds = Vgs; Tj = 25 °C 0.6 0.9 1.1 V
Input Capacitance (Ciss) Vds = 15 V; f = 1 MHz; Vgs = 0 V; Tj = 25 °C - 34 50 pF
Package Style - - - SOT-323 (SC-70) -
Mounting Method - - - Surface Mount -

Key Features

  • Very Fast Switching: The NX3008NBKW,115 features fast switching times, making it suitable for high-speed applications.
  • Low Threshold Voltage: With a gate-source threshold voltage as low as 0.6 V, this MOSFET is efficient in low-voltage systems.
  • Trench MOSFET Technology: Utilizes advanced Trench MOSFET technology for improved performance and efficiency.
  • ESD Protection: Offers ESD protection up to 2 kV, enhancing the component's reliability in harsh environments.
  • AEC-Q101 Qualified: Meets the AEC-Q101 standard, ensuring it is suitable for automotive applications.

Applications

  • Relay Driver: Ideal for driving relays due to its fast switching and low on-resistance.
  • High-Speed Line Driver: Suitable for high-speed line driving applications where fast switching is critical.
  • Low-Side Load Switch: Can be used as a low-side load switch in various power management circuits.
  • Switching Circuits: General-purpose switching in electronic circuits.

Q & A

  1. What is the drain-to-source voltage rating of the NX3008NBKW,115?

    The drain-to-source voltage rating is 30 V.

  2. What is the maximum drain current of the NX3008NBKW,115?

    The maximum drain current is 350 mA.

  3. What is the typical on-resistance of the NX3008NBKW,115?

    The typical on-resistance is 1.4 Ω at Vgs = 4.5 V and Id = 350 mA.

  4. What is the gate-source threshold voltage of the NX3008NBKW,115?

    The gate-source threshold voltage is between 0.6 V and 1.1 V.

  5. Does the NX3008NBKW,115 have ESD protection?

    Yes, it offers ESD protection up to 2 kV.

  6. What is the operating temperature range of the NX3008NBKW,115?

    The operating temperature range is from -55 °C to 150 °C.

  7. What package type is the NX3008NBKW,115 available in?

    The component is packaged in a SOT-323 (SC-70) surface-mounted package.

  8. Is the NX3008NBKW,115 AEC-Q101 qualified?

    Yes, it is AEC-Q101 qualified, making it suitable for automotive applications.

  9. What are some typical applications of the NX3008NBKW,115?

    Typical applications include relay drivers, high-speed line drivers, low-side load switches, and general switching circuits.

  10. What is the turn-on delay time of the NX3008NBKW,115?

    The turn-on delay time is typically 15 ns.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:350mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:1.4Ohm @ 350mA, 4.5V
Vgs(th) (Max) @ Id:1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.68 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):250mW (Ta), 770mW (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SC-75
Package / Case:SC-75, SOT-416
0 Remaining View Similar

In Stock

-
607

Please send RFQ , we will respond immediately.

Same Series
DD15S20LV30/AA
DD15S20LV30/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC46W4S100T2X
CBC46W4S100T2X
CONN D-SUB RCPT 46POS CRIMP
DD15S20Z00/AA
DD15S20Z00/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HE0/AA
CBC13W3S10HE0/AA
CONN D-SUB RCPT 13POS CRIMP
CBC9W4S10HTS/AA
CBC9W4S10HTS/AA
CONN D-SUB RCPT 9POS CRIMP
DD15S20JT2S/AA
DD15S20JT2S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2S0TX
DD26S2S0TX
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S10H00/AA
DD26S10H00/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD26S2S0T2X/AA
DD26S2S0T2X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200T20
DD26S200T20
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0V3X/AA
DD26S2S0V3X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S50T2X/AA
DD44S32S50T2X/AA
CONN D-SUB HD RCPT 44P VERT SLDR

Similar Products

Part Number NX3008NBKT,115 NX3008NBKW,115 NX3008PBKT,115
Manufacturer NXP USA Inc. Nexperia USA Inc. NXP USA Inc.
Product Status Obsolete Active Obsolete
FET Type N-Channel N-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 350mA (Ta) 350mA (Ta) 200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 1.8V, 4.5V 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 1.4Ohm @ 350mA, 4.5V 1.4Ohm @ 350mA, 4.5V 4.1Ohm @ 200mA, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 250µA 1.1V @ 250µA 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.68 nC @ 4.5 V 0.68 nC @ 4.5 V 0.72 nC @ 4.5 V
Vgs (Max) ±8V ±8V ±8V
Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 15 V 50 pF @ 15 V 46 pF @ 15 V
FET Feature - - -
Power Dissipation (Max) 250mW (Ta), 770mW (Tc) 260mW (Ta), 830mW (Tc) 250mW (Ta), 770mW (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SC-75 SOT-323 SC-75
Package / Case SC-75, SOT-416 SC-70, SOT-323 SC-75, SOT-416

Related Product By Categories

STP20NM50
STP20NM50
STMicroelectronics
MOSFET N-CH 500V 20A TO220AB
STD5N52U
STD5N52U
STMicroelectronics
MOSFET N-CH 525V 4.4A DPAK
STD105N10F7AG
STD105N10F7AG
STMicroelectronics
MOSFET N-CH 100V 80A DPAK
STH315N10F7-6
STH315N10F7-6
STMicroelectronics
MOSFET N-CH 100V 180A H2PAK-6
BUK9635-55A,118
BUK9635-55A,118
Nexperia USA Inc.
MOSFET N-CH 55V 34A D2PAK
BUK762R6-60E,118
BUK762R6-60E,118
Nexperia USA Inc.
MOSFET N-CH 60V 120A D2PAK
STW48NM60N
STW48NM60N
STMicroelectronics
MOSFET N-CH 600V 44A TO247
PMZB290UNE,315
PMZB290UNE,315
NXP USA Inc.
MOSFET N-CH 20V 1A DFN1006B-3
FDN336P-NL
FDN336P-NL
onsemi
MOSFET P-CH 20V 1.3A SUPERSOT3
MCH3477-TL-W
MCH3477-TL-W
onsemi
MOSFET N-CH 20V 4.5A SC70
NTNS3A65PZT5G
NTNS3A65PZT5G
onsemi
MOSFET P-CH 20V 281MA SOT883
NVD5490NLT4G
NVD5490NLT4G
onsemi
MOSFET N-CH 60V 5A/17A DPAK-3

Related Product By Brand

PMBD914/DG215
PMBD914/DG215
NXP USA Inc.
PMBD914 - RECTIFIER DIODE
BC807-40QA,147
BC807-40QA,147
NXP USA Inc.
NOW NEXPERIA BC807-40 - SMALL SI
BF908R,215
BF908R,215
NXP USA Inc.
MOSFET DUAL GATE 12V 40MA SOT143
MK24FN1M0VLL12
MK24FN1M0VLL12
NXP USA Inc.
IC MCU 32BIT 1MB FLASH 100LQFP
S9S12G128F0CLLR
S9S12G128F0CLLR
NXP USA Inc.
IC MCU 16BIT 128KB FLASH 100LQFP
SPC5604BF2VLL4
SPC5604BF2VLL4
NXP USA Inc.
IC MCU 32BIT 512KB FLASH 100LQFP
UJA1023T/2R04/C;51
UJA1023T/2R04/C;51
NXP USA Inc.
IC CAN/LIN I/O SLAVE 16-SOIC
UJA1169ATK/X/FZ
UJA1169ATK/X/FZ
NXP USA Inc.
IC MINI-CAN SYSTEM BASIS CHIP
HEF4093BT/C4118
HEF4093BT/C4118
NXP USA Inc.
NAND GATE
74AHC595PW/AUJ
74AHC595PW/AUJ
NXP USA Inc.
IC SHIFT REGISTER 8BIT 16-TSSOP
MKW36A512VFP4
MKW36A512VFP4
NXP USA Inc.
KINETIS W 32-BIT MCU ARM CORTEX-
MFRC53001T/0FE,112
MFRC53001T/0FE,112
NXP USA Inc.
IC RFID READER 13.56MHZ 32SO