NX3008NBKT,115
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NXP USA Inc. NX3008NBKT,115

Manufacturer No:
NX3008NBKT,115
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 350MA SC75
Delivery:
Payment:
iso14001
iso45001
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iso13485

Product Introduction

Overview

The NX3008NBKW,115 is an N-channel enhancement mode Field-Effect Transistor (FET) manufactured by Nexperia. It is part of the TrenchMOS FET family and is packaged in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. This MOSFET is designed for high-speed switching applications and offers several key benefits, including very fast switching times, low threshold voltage, and ESD protection up to 2 kV.

Key Specifications

Parameter Conditions Min Typ Max Unit
Drain-to-Source Voltage (Vdss) Tj = 25 °C - - 30 V
Drain-Source On Resistance (Rds(on)) Vgs = 4.5 V; Id = 350 mA - - 1.4 Ω
Rated Power Dissipation - - - 260 mW
Gate Charge (Qg) - - - 0.52 nC
Gate-Source Voltage (Vgss) - -8 - 8 V
Drain Current (Id) Vgs = 4.5 V - - 350 mA
Turn-on Delay Time Vds = 20 V; Rl = 250 Ω; Vgs = 4.5 V; Rg(ext) = 6 Ω; Tj = 25 °C - 15 30 ns
Turn-off Delay Time Vds = 20 V; Rl = 250 Ω; Vgs = 4.5 V; Rg(ext) = 6 Ω; Tj = 25 °C - 69 138 ns
Rise Time Vds = 20 V; Rl = 250 Ω; Vgs = 4.5 V; Rg(ext) = 6 Ω; Tj = 25 °C - 11 - ns
Fall Time Vds = 20 V; Rl = 250 Ω; Vgs = 4.5 V; Rg(ext) = 6 Ω; Tj = 25 °C - 19 - ns
Operating Temperature Range - -55 - 150 °C
Gate Source Threshold (Vgs(th)) Id = 250 µA; Vds = Vgs; Tj = 25 °C 0.6 0.9 1.1 V
Input Capacitance (Ciss) Vds = 15 V; f = 1 MHz; Vgs = 0 V; Tj = 25 °C - 34 50 pF
Package Style - - - SOT-323 (SC-70) -
Mounting Method - - - Surface Mount -

Key Features

  • Very Fast Switching: The NX3008NBKW,115 features fast switching times, making it suitable for high-speed applications.
  • Low Threshold Voltage: With a gate-source threshold voltage as low as 0.6 V, this MOSFET is efficient in low-voltage systems.
  • Trench MOSFET Technology: Utilizes advanced Trench MOSFET technology for improved performance and efficiency.
  • ESD Protection: Offers ESD protection up to 2 kV, enhancing the component's reliability in harsh environments.
  • AEC-Q101 Qualified: Meets the AEC-Q101 standard, ensuring it is suitable for automotive applications.

Applications

  • Relay Driver: Ideal for driving relays due to its fast switching and low on-resistance.
  • High-Speed Line Driver: Suitable for high-speed line driving applications where fast switching is critical.
  • Low-Side Load Switch: Can be used as a low-side load switch in various power management circuits.
  • Switching Circuits: General-purpose switching in electronic circuits.

Q & A

  1. What is the drain-to-source voltage rating of the NX3008NBKW,115?

    The drain-to-source voltage rating is 30 V.

  2. What is the maximum drain current of the NX3008NBKW,115?

    The maximum drain current is 350 mA.

  3. What is the typical on-resistance of the NX3008NBKW,115?

    The typical on-resistance is 1.4 Ω at Vgs = 4.5 V and Id = 350 mA.

  4. What is the gate-source threshold voltage of the NX3008NBKW,115?

    The gate-source threshold voltage is between 0.6 V and 1.1 V.

  5. Does the NX3008NBKW,115 have ESD protection?

    Yes, it offers ESD protection up to 2 kV.

  6. What is the operating temperature range of the NX3008NBKW,115?

    The operating temperature range is from -55 °C to 150 °C.

  7. What package type is the NX3008NBKW,115 available in?

    The component is packaged in a SOT-323 (SC-70) surface-mounted package.

  8. Is the NX3008NBKW,115 AEC-Q101 qualified?

    Yes, it is AEC-Q101 qualified, making it suitable for automotive applications.

  9. What are some typical applications of the NX3008NBKW,115?

    Typical applications include relay drivers, high-speed line drivers, low-side load switches, and general switching circuits.

  10. What is the turn-on delay time of the NX3008NBKW,115?

    The turn-on delay time is typically 15 ns.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:350mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:1.4Ohm @ 350mA, 4.5V
Vgs(th) (Max) @ Id:1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.68 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):250mW (Ta), 770mW (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SC-75
Package / Case:SC-75, SOT-416
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Similar Products

Part Number NX3008NBKT,115 NX3008NBKW,115 NX3008PBKT,115
Manufacturer NXP USA Inc. Nexperia USA Inc. NXP USA Inc.
Product Status Obsolete Active Obsolete
FET Type N-Channel N-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 350mA (Ta) 350mA (Ta) 200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 1.8V, 4.5V 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 1.4Ohm @ 350mA, 4.5V 1.4Ohm @ 350mA, 4.5V 4.1Ohm @ 200mA, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 250µA 1.1V @ 250µA 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.68 nC @ 4.5 V 0.68 nC @ 4.5 V 0.72 nC @ 4.5 V
Vgs (Max) ±8V ±8V ±8V
Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 15 V 50 pF @ 15 V 46 pF @ 15 V
FET Feature - - -
Power Dissipation (Max) 250mW (Ta), 770mW (Tc) 260mW (Ta), 830mW (Tc) 250mW (Ta), 770mW (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SC-75 SOT-323 SC-75
Package / Case SC-75, SOT-416 SC-70, SOT-323 SC-75, SOT-416

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