NX3008NBKW,115
  • Share:

Nexperia USA Inc. NX3008NBKW,115

Manufacturer No:
NX3008NBKW,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 350MA SOT323
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NX3008NBKW,115 is a 30 V, 350 mA N-channel enhancement mode Field-Effect Transistor (FET) produced by Nexperia USA Inc. This MOSFET is part of Nexperia's TrenchMOS technology and is packaged in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. It is AEC-Q101 qualified, making it suitable for automotive applications, as well as various industrial, power, computing, and consumer electronics uses.

Key Specifications

ParameterValue
TypeN-Channel Trench MOSFET
Drain-to-Source Voltage (VDS)30 V
Drain Current (ID)350 mA
Drain-Source On Resistance (RDSon) @ VGS = 4.5 V1.4 Ω
Gate-Source Threshold Voltage (VGSth)0.9 V
Gate-Source Voltage (VGS)8 V
Operating Temperature Range-55°C to +150°C
Input Capacitance (Ciss)34 pF
Output Capacitance (Coss)6.5 pF
Package StyleSOT323 (SC-70)
Mounting MethodSurface Mount
ESD ProtectionUp to 2 kV

Key Features

  • Very fast switching capabilities
  • Low threshold voltage for efficient operation
  • Trench MOSFET technology for improved performance
  • ESD protection up to 2 kV for enhanced reliability
  • AEC-Q101 qualified for automotive applications
  • Compact SOT323 (SC-70) package for space-saving designs

Applications

  • Automotive systems: Suitable for various automotive applications due to its AEC-Q101 qualification.
  • Relay drivers: Ideal for driving relays in different electronic systems.
  • High-speed line drivers: Used in high-speed switching applications.
  • Low-side load switches: Effective in managing load switching in various electronic circuits.
  • Industrial and power applications: Used in power management and industrial control systems.
  • Consumer electronics: Found in mobile, computing, and consumer devices.

Q & A

  1. What is the maximum drain-to-source voltage of the NX3008NBKW,115?
    The maximum drain-to-source voltage is 30 V.
  2. What is the maximum drain current of the NX3008NBKW,115?
    The maximum drain current is 350 mA.
  3. What is the typical gate-source threshold voltage of the NX3008NBKW,115?
    The typical gate-source threshold voltage is 0.9 V.
  4. Is the NX3008NBKW,115 AEC-Q101 qualified?
    Yes, it is AEC-Q101 qualified, making it suitable for automotive applications.
  5. What is the package style of the NX3008NBKW,115?
    The package style is SOT323 (SC-70).
  6. What is the operating temperature range of the NX3008NBKW,115?
    The operating temperature range is -55°C to +150°C.
  7. Does the NX3008NBKW,115 have ESD protection?
    Yes, it has ESD protection up to 2 kV.
  8. What are some common applications of the NX3008NBKW,115?
    Common applications include relay drivers, high-speed line drivers, low-side load switches, and various automotive and industrial systems.
  9. How many units are typically packed in a reel?
    Typically, 3000 units are packed in a reel.
  10. What is the typical input capacitance of the NX3008NBKW,115?
    The typical input capacitance is 34 pF.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:350mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:1.4Ohm @ 350mA, 4.5V
Vgs(th) (Max) @ Id:1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.68 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):260mW (Ta), 830mW (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-323
Package / Case:SC-70, SOT-323
0 Remaining View Similar

In Stock

$0.37
911

Please send RFQ , we will respond immediately.

Similar Products

Part Number NX3008NBKW,115 NX3008PBKW,115 NX3008NBKT,115
Manufacturer Nexperia USA Inc. Nexperia USA Inc. NXP USA Inc.
Product Status Active Active Obsolete
FET Type N-Channel P-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 350mA (Ta) 200mA (Ta) 350mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 2.5V, 4.5V 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 1.4Ohm @ 350mA, 4.5V 4.1Ohm @ 200mA, 4.5V 1.4Ohm @ 350mA, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 250µA 1.1V @ 250µA 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.68 nC @ 4.5 V 0.72 nC @ 4.5 V 0.68 nC @ 4.5 V
Vgs (Max) ±8V ±8V ±8V
Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 15 V 46 pF @ 15 V 50 pF @ 15 V
FET Feature - - -
Power Dissipation (Max) 260mW (Ta), 830mW (Tc) 260mW (Ta), 830mW (Tc) 250mW (Ta), 770mW (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-323 SOT-323 SC-75
Package / Case SC-70, SOT-323 SC-70, SOT-323 SC-75, SOT-416

Related Product By Categories

FCD380N60E
FCD380N60E
onsemi
MOSFET N-CH 600V 10.2A DPAK
CSD19536KTTT
CSD19536KTTT
Texas Instruments
MOSFET N-CH 100V 200A DDPAK
NTMFS5C468NLT1G
NTMFS5C468NLT1G
onsemi
MOSFET N-CH 40V 5DFN
PSMN0R9-25YLDX
PSMN0R9-25YLDX
Nexperia USA Inc.
MOSFET N-CH 25V 300A LFPAK56
STB100N10F7
STB100N10F7
STMicroelectronics
MOSFET N-CH 100V 80A D2PAK
STF3NK100Z
STF3NK100Z
STMicroelectronics
MOSFET N-CH 1000V 2.5A TO220FP
IRFP4668PBF
IRFP4668PBF
Infineon Technologies
MOSFET N-CH 200V 130A TO247AC
FDMC4435BZ-F127-L701
FDMC4435BZ-F127-L701
onsemi
SINGLE ST3 P Z MLP3.3X3.3
STL10N65M2
STL10N65M2
STMicroelectronics
MOSFET N-CH 650V 4.5A POWERFLAT
FDMS86163P-23507X
FDMS86163P-23507X
onsemi
FET -100V 22.0 MOHM PQFN56
NVMFS6B25NLT1G
NVMFS6B25NLT1G
onsemi
MOSFET N-CH 100V 8A/33A 5DFN
MCH3478-TL-W
MCH3478-TL-W
onsemi
MOSFET N-CH 30V 2A 3MCPH

Related Product By Brand

PESD24VS5UD,115
PESD24VS5UD,115
Nexperia USA Inc.
TVS DIODE 24VWM 52VC 6TSOP
PMEG4010AESBYL
PMEG4010AESBYL
Nexperia USA Inc.
DIODE SCHOTTKY 40V 1A SOD993
PMEG4030ER-QX
PMEG4030ER-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
BZX384-B3V3,115
BZX384-B3V3,115
Nexperia USA Inc.
DIODE ZENER 3.3V 300MW SOD323
PEMH11,315
PEMH11,315
Nexperia USA Inc.
TRANS PREBIAS 2NPN 50V SOT666
BC846BM,315
BC846BM,315
Nexperia USA Inc.
TRANS NPN 65V 0.1A DFN1006B-3
BCX56-10,135
BCX56-10,135
Nexperia USA Inc.
TRANS NPN 80V 1A SOT89
BUK6D43-60EX
BUK6D43-60EX
Nexperia USA Inc.
MOSFET N-CH 60V 5A DFN2020MD-6
HEF4541BT,653
HEF4541BT,653
Nexperia USA Inc.
IC OSC PROG TIMER 36MHZ 14SOIC
74HCT4851PW,118
74HCT4851PW,118
Nexperia USA Inc.
IC MUX/DEMUX 8CH SELECT 16TSSOP
HEF4067BT,652
HEF4067BT,652
Nexperia USA Inc.
IC MUX/DEMUX 4X16 24SOIC
74HC4050DB,118
74HC4050DB,118
Nexperia USA Inc.
IC BUFFER NON-INVERT 6V 16SSOP