NX3008NBKW,115
  • Share:

Nexperia USA Inc. NX3008NBKW,115

Manufacturer No:
NX3008NBKW,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 350MA SOT323
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NX3008NBKW,115 is a 30 V, 350 mA N-channel enhancement mode Field-Effect Transistor (FET) produced by Nexperia USA Inc. This MOSFET is part of Nexperia's TrenchMOS technology and is packaged in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. It is AEC-Q101 qualified, making it suitable for automotive applications, as well as various industrial, power, computing, and consumer electronics uses.

Key Specifications

ParameterValue
TypeN-Channel Trench MOSFET
Drain-to-Source Voltage (VDS)30 V
Drain Current (ID)350 mA
Drain-Source On Resistance (RDSon) @ VGS = 4.5 V1.4 Ω
Gate-Source Threshold Voltage (VGSth)0.9 V
Gate-Source Voltage (VGS)8 V
Operating Temperature Range-55°C to +150°C
Input Capacitance (Ciss)34 pF
Output Capacitance (Coss)6.5 pF
Package StyleSOT323 (SC-70)
Mounting MethodSurface Mount
ESD ProtectionUp to 2 kV

Key Features

  • Very fast switching capabilities
  • Low threshold voltage for efficient operation
  • Trench MOSFET technology for improved performance
  • ESD protection up to 2 kV for enhanced reliability
  • AEC-Q101 qualified for automotive applications
  • Compact SOT323 (SC-70) package for space-saving designs

Applications

  • Automotive systems: Suitable for various automotive applications due to its AEC-Q101 qualification.
  • Relay drivers: Ideal for driving relays in different electronic systems.
  • High-speed line drivers: Used in high-speed switching applications.
  • Low-side load switches: Effective in managing load switching in various electronic circuits.
  • Industrial and power applications: Used in power management and industrial control systems.
  • Consumer electronics: Found in mobile, computing, and consumer devices.

Q & A

  1. What is the maximum drain-to-source voltage of the NX3008NBKW,115?
    The maximum drain-to-source voltage is 30 V.
  2. What is the maximum drain current of the NX3008NBKW,115?
    The maximum drain current is 350 mA.
  3. What is the typical gate-source threshold voltage of the NX3008NBKW,115?
    The typical gate-source threshold voltage is 0.9 V.
  4. Is the NX3008NBKW,115 AEC-Q101 qualified?
    Yes, it is AEC-Q101 qualified, making it suitable for automotive applications.
  5. What is the package style of the NX3008NBKW,115?
    The package style is SOT323 (SC-70).
  6. What is the operating temperature range of the NX3008NBKW,115?
    The operating temperature range is -55°C to +150°C.
  7. Does the NX3008NBKW,115 have ESD protection?
    Yes, it has ESD protection up to 2 kV.
  8. What are some common applications of the NX3008NBKW,115?
    Common applications include relay drivers, high-speed line drivers, low-side load switches, and various automotive and industrial systems.
  9. How many units are typically packed in a reel?
    Typically, 3000 units are packed in a reel.
  10. What is the typical input capacitance of the NX3008NBKW,115?
    The typical input capacitance is 34 pF.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:350mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:1.4Ohm @ 350mA, 4.5V
Vgs(th) (Max) @ Id:1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.68 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):260mW (Ta), 830mW (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-323
Package / Case:SC-70, SOT-323
0 Remaining View Similar

In Stock

$0.37
911

Please send RFQ , we will respond immediately.

Similar Products

Part Number NX3008NBKW,115 NX3008PBKW,115 NX3008NBKT,115
Manufacturer Nexperia USA Inc. Nexperia USA Inc. NXP USA Inc.
Product Status Active Active Obsolete
FET Type N-Channel P-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 350mA (Ta) 200mA (Ta) 350mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 2.5V, 4.5V 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 1.4Ohm @ 350mA, 4.5V 4.1Ohm @ 200mA, 4.5V 1.4Ohm @ 350mA, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 250µA 1.1V @ 250µA 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.68 nC @ 4.5 V 0.72 nC @ 4.5 V 0.68 nC @ 4.5 V
Vgs (Max) ±8V ±8V ±8V
Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 15 V 46 pF @ 15 V 50 pF @ 15 V
FET Feature - - -
Power Dissipation (Max) 260mW (Ta), 830mW (Tc) 260mW (Ta), 830mW (Tc) 250mW (Ta), 770mW (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-323 SOT-323 SC-75
Package / Case SC-70, SOT-323 SC-70, SOT-323 SC-75, SOT-416

Related Product By Categories

BSC040N10NS5ATMA1
BSC040N10NS5ATMA1
Infineon Technologies
MOSFET N-CH 100V 100A TDSON
FDMT80040DC
FDMT80040DC
onsemi
MOSFET N-CH 40V 420A 8PQFN
FDB12N50TM
FDB12N50TM
onsemi
MOSFET N-CH 500V 11.5A D2PAK
AO4407A
AO4407A
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V 12A 8SOIC
FQD7P06TM
FQD7P06TM
onsemi
MOSFET P-CH 60V 5.4A DPAK
STD60NF06T4
STD60NF06T4
STMicroelectronics
MOSFET N-CH 60V 60A DPAK
PMCXB900UE147
PMCXB900UE147
NXP USA Inc.
SMALL SIGNAL FET
STP80PF55
STP80PF55
STMicroelectronics
MOSFET P-CH 55V 80A TO220AB
NTD20N06LT4
NTD20N06LT4
onsemi
MOSFET N-CH 60V 20A DPAK
FDN336P-NL
FDN336P-NL
onsemi
MOSFET P-CH 20V 1.3A SUPERSOT3
STP24N65M2
STP24N65M2
STMicroelectronics
MOSFET N-CH 650V 16A TO220
MCH3375-TL-W-Z
MCH3375-TL-W-Z
onsemi
MOSFET P-CH 30V 1.6A SC-70FL

Related Product By Brand

PRTR5V0U2X,215
PRTR5V0U2X,215
Nexperia USA Inc.
TVS DIODE 5.5VWM SOT143B
PTVS3V3S1UR,115
PTVS3V3S1UR,115
Nexperia USA Inc.
TVS DIODE 3.3VWM 8VC CFP3
BAS21J/ZLF
BAS21J/ZLF
Nexperia USA Inc.
DIODE GEN PURP 300V 250MA SC90
BZX384-B3V3,115
BZX384-B3V3,115
Nexperia USA Inc.
DIODE ZENER 3.3V 300MW SOD323
BC846BM,315
BC846BM,315
Nexperia USA Inc.
TRANS NPN 65V 0.1A DFN1006B-3
BUK9K6R2-40E,115
BUK9K6R2-40E,115
Nexperia USA Inc.
MOSFET 2N-CH 40V 40A LFPAK56D
74LVC1G125GV-Q100,
74LVC1G125GV-Q100,
Nexperia USA Inc.
IC BUFFER NON-INVERT 5.5V SC74A
74AHC273PW,112
74AHC273PW,112
Nexperia USA Inc.
IC FF D-TYPE SNGL 8BIT 20TSSOP
HEF4013BTT-Q100J
HEF4013BTT-Q100J
Nexperia USA Inc.
IC FF D-TYPE DUAL 1BIT 14TSSOP
74HC11DB,118-NEX
74HC11DB,118-NEX
Nexperia USA Inc.
IC GATE AND 3CH 3-INP 14SSOP
74AUP1G157GM-Q100X
74AUP1G157GM-Q100X
Nexperia USA Inc.
IC MULTIPLX 1 X 2:1 6XSON/SOT886
74HC237D-Q100J
74HC237D-Q100J
Nexperia USA Inc.
IC DECODER/DEMUX 1 X 3:8 16SO