BC857CQBZ
  • Share:

Nexperia USA Inc. BC857CQBZ

Manufacturer No:
BC857CQBZ
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS 45V 0.1A DFN1110D-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC857CQBZ is a PNP general-purpose transistor manufactured by Nexperia, a leading semiconductor company headquartered in Nijmegen, the Netherlands. This transistor is part of Nexperia's extensive portfolio of bipolar transistors, which are widely used in various electronic applications. The BC857CQBZ is designed to offer reliable performance in low-current, low-voltage scenarios, making it suitable for a range of industrial, automotive, and consumer electronics.

Key Specifications

ParameterValueUnit
Collector-Base Breakdown Voltage (VCEO)-45V
Collector Current (IC)-100mA
Peak Collector Current (ICM)-200mA
Base Current (IB)-5mA
DC Current Gain (hFE)125 - 800
Collector-Emitter Saturation Voltage (VCEsat)-250 to -650mV
Base-Emitter Saturation Voltage (VBEsat)-850mV
Junction Temperature (Tj)-150°C
Ambient Temperature (Tamb)-65 to 150°C
Storage Temperature (Tstg)-65 to 150°C
Package TypeSOT23 (TO-236AB)

Key Features

  • Low current capability (max. 100 mA)
  • Low voltage operation (max. 65 V)
  • Qualified according to AEC-Q101, making it suitable for automotive applications
  • General-purpose switching and amplification
  • Compact SOT23 (TO-236AB) surface-mounted package
  • High DC current gain (hFE) ranging from 125 to 800

Applications

The BC857CQBZ transistor is versatile and can be used in a variety of applications, including:

  • Automotive systems: Due to its AEC-Q101 qualification, it is recommended for use in automotive electronics.
  • Industrial electronics: Suitable for general-purpose switching and amplification in industrial control systems.
  • Consumer electronics: Used in various consumer devices requiring low-current, low-voltage transistor operations.
  • Mobile devices: Can be integrated into mobile electronics for efficient switching and amplification.

Q & A

  1. What is the maximum collector current of the BC857CQBZ transistor?
    The maximum collector current is 100 mA.
  2. What is the maximum voltage rating of the BC857CQBZ transistor?
    The maximum voltage rating is 65 V.
  3. What package type does the BC857CQBZ transistor use?
    The transistor is packaged in a SOT23 (TO-236AB) surface-mounted device.
  4. Is the BC857CQBZ qualified for automotive applications?
    Yes, it is qualified according to AEC-Q101.
  5. What is the DC current gain range of the BC857CQBZ transistor?
    The DC current gain (hFE) ranges from 125 to 800.
  6. What are the typical applications of the BC857CQBZ transistor?
    It is used in automotive, industrial, consumer, and mobile electronics.
  7. What is the junction temperature range of the BC857CQBZ transistor?
    The junction temperature range is -150°C to 150°C.
  8. Can the BC857CQBZ transistor be used for high-power applications?
    No, it is designed for low-current, low-voltage applications.
  9. How do I obtain the datasheet for the BC857CQBZ transistor?
    The datasheet can be obtained from Nexperia's official website or through local Nexperia sales offices.
  10. What is the storage temperature range for the BC857CQBZ transistor?
    The storage temperature range is -65°C to 150°C.

Product Attributes

Transistor Type:- 
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:400mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:420 @ 2mA, 5V
Power - Max:340 mW
Frequency - Transition:- 
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount, Wettable Flank
Package / Case:3-XDFN Exposed Pad
Supplier Device Package:DFN1110D-3
0 Remaining View Similar

In Stock

-
529

Please send RFQ , we will respond immediately.

Same Series
DD15S20L0S
DD15S20L0S
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20LV5S/AA
DD15S20LV5S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20JV3S/AA
DD15S20JV3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC46W4S1S500S
CBC46W4S1S500S
CONN D-SUB RCPT 46POS CRIMP
DD26S2S0T2X/AA
DD26S2S0T2X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S5000
DD26S2S5000
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200V30
DD26S200V30
CONN D-SUB HD RCPT 26P SLDR CUP
CBC13W3S10HE3S/AA
CBC13W3S10HE3S/AA
CONN D-SUB RCPT 13POS CRIMP
DD62M32S60V3S/AA
DD62M32S60V3S/AA
CONN D-SUB HD PLUG 62P VERT SLDR
DD44S3200T2X
DD44S3200T2X
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S0T2X/AA
DD44S32S0T2X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
CBC46W4S100T2S/AA
CBC46W4S100T2S/AA
CONN D-SUB RCPT 46POS CRIMP

Similar Products

Part Number BC857CQBZ BC857CQCZ BC857BQBZ BC857CQAZ
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Obsolete Active Obsolete Active
Transistor Type - PNP - PNP
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 100mA 850mV @ 5mA, 100mA 400mV @ 5mA, 100mA 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA, 5V 420 @ 2mA, 5V 200 @ 2mA, 5V 420 @ 2mA, 5V
Power - Max 340 mW 360 mW 340 mW 280 mW
Frequency - Transition - 100MHz - 100MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount, Wettable Flank Surface Mount, Wettable Flank Surface Mount, Wettable Flank Surface Mount
Package / Case 3-XDFN Exposed Pad 3-XDFN Exposed Pad 3-XDFN Exposed Pad 3-XDFN Exposed Pad
Supplier Device Package DFN1110D-3 DFN1412D-3 DFN1110D-3 DFN1010D-3

Related Product By Categories

BCV26
BCV26
onsemi
TRANS PNP DARL 30V 1.2A SOT23-3
BC857B
BC857B
Infineon Technologies
TRANS PNP 45V 0.1A SOT23-3
PBSS4160U,115
PBSS4160U,115
Nexperia USA Inc.
TRANS NPN 60V 0.75A SOT323
BD13610S
BD13610S
Fairchild Semiconductor
TRANS PNP 45V 1.5A TO126-3
BC857AW_R1_00001
BC857AW_R1_00001
Panjit International Inc.
TRANS PNP 45V 0.1A SOT323
MJE5731AG
MJE5731AG
onsemi
TRANS PNP 375V 1A TO220
BD680
BD680
STMicroelectronics
TRANS PNP DARL 80V 4A SOT32-3
PMBT4401YS115
PMBT4401YS115
NXP USA Inc.
40 V, 600 MA, DOUBLE NPN SWITCHI
BCP5310H6327XTSA1
BCP5310H6327XTSA1
Infineon Technologies
TRANS PNP 80V 1A SOT223-4
NSVMUN5237T1G
NSVMUN5237T1G
onsemi
NSVMUN5237 - NPN BIPOLAR DIGITAL
BC857CWE6327BTSA1
BC857CWE6327BTSA1
Infineon Technologies
TRANS PNP 45V 0.1A SOT323
BCP5610E6327HTSA1
BCP5610E6327HTSA1
Infineon Technologies
TRANS NPN 80V 1A SOT223-4

Related Product By Brand

PTVS8V5S1UR,115
PTVS8V5S1UR,115
Nexperia USA Inc.
TVS DIODE 8.5VWM 14.4VC CFP3
BAS40W,115
BAS40W,115
Nexperia USA Inc.
NEXPERIA BAS40W - RECTIFIER DIOD
1PS79SB40,699
1PS79SB40,699
Nexperia USA Inc.
DIODE SCHOTTKY 40V 120MA SOD523
BZT52H-B20,115
BZT52H-B20,115
Nexperia USA Inc.
DIODE ZENER 20V 375MW SOD123F
BZX84-C8V2/DG/B4R
BZX84-C8V2/DG/B4R
Nexperia USA Inc.
DIODE ZENER 8.2V 250MW TO236AB
PBSS5350X,135
PBSS5350X,135
Nexperia USA Inc.
TRANS PNP 50V 3A SOT89
PMZ600UNEYL
PMZ600UNEYL
Nexperia USA Inc.
MOSFET N-CH 20V 600MA DFN1006-3
74LVC126APW,112
74LVC126APW,112
Nexperia USA Inc.
IC BUF NON-INVERT 3.6V 14TSSOP
74LVC08AD,112
74LVC08AD,112
Nexperia USA Inc.
IC GATE AND 4CH 2-INP 14SO
74LVC3G04DP,125
74LVC3G04DP,125
Nexperia USA Inc.
IC INVERTER 3CH 3-INP 8TSSOP
74HC2G08DP,125
74HC2G08DP,125
Nexperia USA Inc.
IC GATE AND 2CH 2-INP 8TSSOP
74HC237D-Q100J
74HC237D-Q100J
Nexperia USA Inc.
IC DECODER/DEMUX 1 X 3:8 16SO