BC857CQBZ
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Nexperia USA Inc. BC857CQBZ

Manufacturer No:
BC857CQBZ
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS 45V 0.1A DFN1110D-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC857CQBZ is a PNP general-purpose transistor manufactured by Nexperia, a leading semiconductor company headquartered in Nijmegen, the Netherlands. This transistor is part of Nexperia's extensive portfolio of bipolar transistors, which are widely used in various electronic applications. The BC857CQBZ is designed to offer reliable performance in low-current, low-voltage scenarios, making it suitable for a range of industrial, automotive, and consumer electronics.

Key Specifications

ParameterValueUnit
Collector-Base Breakdown Voltage (VCEO)-45V
Collector Current (IC)-100mA
Peak Collector Current (ICM)-200mA
Base Current (IB)-5mA
DC Current Gain (hFE)125 - 800
Collector-Emitter Saturation Voltage (VCEsat)-250 to -650mV
Base-Emitter Saturation Voltage (VBEsat)-850mV
Junction Temperature (Tj)-150°C
Ambient Temperature (Tamb)-65 to 150°C
Storage Temperature (Tstg)-65 to 150°C
Package TypeSOT23 (TO-236AB)

Key Features

  • Low current capability (max. 100 mA)
  • Low voltage operation (max. 65 V)
  • Qualified according to AEC-Q101, making it suitable for automotive applications
  • General-purpose switching and amplification
  • Compact SOT23 (TO-236AB) surface-mounted package
  • High DC current gain (hFE) ranging from 125 to 800

Applications

The BC857CQBZ transistor is versatile and can be used in a variety of applications, including:

  • Automotive systems: Due to its AEC-Q101 qualification, it is recommended for use in automotive electronics.
  • Industrial electronics: Suitable for general-purpose switching and amplification in industrial control systems.
  • Consumer electronics: Used in various consumer devices requiring low-current, low-voltage transistor operations.
  • Mobile devices: Can be integrated into mobile electronics for efficient switching and amplification.

Q & A

  1. What is the maximum collector current of the BC857CQBZ transistor?
    The maximum collector current is 100 mA.
  2. What is the maximum voltage rating of the BC857CQBZ transistor?
    The maximum voltage rating is 65 V.
  3. What package type does the BC857CQBZ transistor use?
    The transistor is packaged in a SOT23 (TO-236AB) surface-mounted device.
  4. Is the BC857CQBZ qualified for automotive applications?
    Yes, it is qualified according to AEC-Q101.
  5. What is the DC current gain range of the BC857CQBZ transistor?
    The DC current gain (hFE) ranges from 125 to 800.
  6. What are the typical applications of the BC857CQBZ transistor?
    It is used in automotive, industrial, consumer, and mobile electronics.
  7. What is the junction temperature range of the BC857CQBZ transistor?
    The junction temperature range is -150°C to 150°C.
  8. Can the BC857CQBZ transistor be used for high-power applications?
    No, it is designed for low-current, low-voltage applications.
  9. How do I obtain the datasheet for the BC857CQBZ transistor?
    The datasheet can be obtained from Nexperia's official website or through local Nexperia sales offices.
  10. What is the storage temperature range for the BC857CQBZ transistor?
    The storage temperature range is -65°C to 150°C.

Product Attributes

Transistor Type:- 
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:400mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:420 @ 2mA, 5V
Power - Max:340 mW
Frequency - Transition:- 
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount, Wettable Flank
Package / Case:3-XDFN Exposed Pad
Supplier Device Package:DFN1110D-3
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Similar Products

Part Number BC857CQBZ BC857CQCZ BC857BQBZ BC857CQAZ
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Obsolete Active Obsolete Active
Transistor Type - PNP - PNP
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 100mA 850mV @ 5mA, 100mA 400mV @ 5mA, 100mA 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA, 5V 420 @ 2mA, 5V 200 @ 2mA, 5V 420 @ 2mA, 5V
Power - Max 340 mW 360 mW 340 mW 280 mW
Frequency - Transition - 100MHz - 100MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount, Wettable Flank Surface Mount, Wettable Flank Surface Mount, Wettable Flank Surface Mount
Package / Case 3-XDFN Exposed Pad 3-XDFN Exposed Pad 3-XDFN Exposed Pad 3-XDFN Exposed Pad
Supplier Device Package DFN1110D-3 DFN1412D-3 DFN1110D-3 DFN1010D-3

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