MMBT3906LT1
  • Share:

Infineon Technologies MMBT3906LT1

Manufacturer No:
MMBT3906LT1
Manufacturer:
Infineon Technologies
Package:
Bulk
Description:
TRANS PNP 40V 0.2A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MMBT3906LT1 is a PNP silicon general-purpose transistor produced by Infineon Technologies. This transistor is part of the MMBT3906 series, known for its versatility and reliability in various electronic applications. It is AEC-Q101 qualified, making it suitable for automotive and other demanding environments. The device is also Pb-free, halogen-free, and RoHS compliant, aligning with modern environmental standards.

Key Specifications

Parameter Symbol Value Unit
Collector-Emitter Voltage VCEO -40 Vdc
Collector-Base Voltage VCBO -40 Vdc
Emitter-Base Voltage VEBO -5.0 Vdc
Collector Current - Continuous IC -200 mAdc
Collector Current - Peak ICM -800 mAdc
DC Current Gain (IC = -0.1 mA, VCE = -1.0 V) HFE 60 - 300
Collector-Emitter Saturation Voltage (IC = -10 mA, IB = -1.0 mA) VCE(sat) -0.25 Vdc
Base-Emitter Saturation Voltage (IC = -10 mA, IB = -1.0 mA) VBE(sat) -0.65 Vdc
Current-Gain Bandwidth Product (IC = -10 mA, VCE = -20 V, f = 100 MHz) fT 250 MHz
Junction and Storage Temperature TJ, Tstg -65 to +150 °C

Key Features

  • AEC-Q101 Qualified: Suitable for automotive and other applications requiring high reliability.
  • Pb-free, Halogen-free, and RoHS Compliant: Environmentally friendly packaging.
  • High DC Current Gain: Ranges from 60 to 300, depending on the collector current.
  • Low Collector-Emitter Saturation Voltage: Ensures efficient operation with minimal voltage drop.
  • High Current-Gain Bandwidth Product: 250 MHz, suitable for high-frequency applications.
  • Small-Signal Characteristics: Includes parameters such as input capacitance, output capacitance, and input impedance.
  • Switching Characteristics: Fast switching times with delay, rise, storage, and fall times optimized for dynamic performance.

Applications

  • Automotive Electronics: Suitable due to AEC-Q101 qualification and robust performance.
  • General Purpose Amplification: Can be used in a wide range of amplification circuits.
  • Switching Circuits: Ideal for applications requiring fast switching times and low saturation voltages.
  • Audio Circuits: Used in audio amplifiers and other audio-related applications due to its small-signal characteristics.
  • Industrial Control Systems: Reliable performance in various industrial control and automation systems.

Q & A

  1. What is the collector-emitter voltage rating of the MMBT3906LT1?

    The collector-emitter voltage rating is -40 Vdc.

  2. Is the MMBT3906LT1 Pb-free and RoHS compliant?

    Yes, it is Pb-free, halogen-free, and RoHS compliant.

  3. What is the DC current gain range of the MMBT3906LT1?

    The DC current gain ranges from 60 to 300, depending on the collector current.

  4. What is the typical collector-emitter saturation voltage for the MMBT3906LT1?

    The typical collector-emitter saturation voltage is -0.25 Vdc for IC = -10 mA and IB = -1.0 mA.

  5. What is the current-gain bandwidth product of the MMBT3906LT1?

    The current-gain bandwidth product is 250 MHz.

  6. What are the typical switching times for the MMBT3906LT1?

    The delay time is approximately 35 ns, rise time is 35 ns, storage time is 225 ns, and fall time is 75 ns.

  7. Is the MMBT3906LT1 suitable for high-frequency applications?

    Yes, it is suitable due to its high current-gain bandwidth product and fast switching times.

  8. What is the junction and storage temperature range for the MMBT3906LT1?

    The junction and storage temperature range is -65 to +150°C.

  9. What package type is the MMBT3906LT1 available in?

    The MMBT3906LT1 is available in the SOT-23 (TO-236) package.

  10. Can the MMBT3906LT1 be used in automotive applications?

    Yes, it is AEC-Q101 qualified, making it suitable for automotive and other demanding environments.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):200 mA
Voltage - Collector Emitter Breakdown (Max):40 V
Vce Saturation (Max) @ Ib, Ic:400mV @ 5mA, 50mA
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 10mA, 1V
Power - Max:225 mW
Frequency - Transition:250MHz
Operating Temperature:- 
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
0 Remaining View Similar

In Stock

-
490

Please send RFQ , we will respond immediately.

Same Series
DD15S2S5WV50/AA
DD15S2S5WV50/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20LV3S/AA
DD15S20LV3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
RD15S10HE0/AA
RD15S10HE0/AA
CONN D-SUB RCPT 15POS CRIMP
DD26M20HE2Z/AA
DD26M20HE2Z/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD15S20WV5S
DD15S20WV5S
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S200E30/AA
DD26S200E30/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S10HE2X/AA
DD26S10HE2X/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD26S200V30
DD26S200V30
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200EX
DD26S200EX
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S0V3X/AA
DD44S32S0V3X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20WE2X/AA
DD26S20WE2X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S0V5X
DD44S32S0V5X
CONN D-SUB HD RCPT 44P VERT SLDR

Similar Products

Part Number MMBT3906LT1 MMBT3906LT1G MMBT3906WT1 MMBT3904LT1
Manufacturer Infineon Technologies onsemi onsemi Infineon Technologies
Product Status Obsolete Active Obsolete Obsolete
Transistor Type PNP PNP - NPN
Current - Collector (Ic) (Max) 200 mA 200 mA - 200 mA
Voltage - Collector Emitter Breakdown (Max) 40 V 40 V - 40 V
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 50mA 400mV @ 5mA, 50mA - 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max) - - - -
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA, 1V 100 @ 10mA, 1V - 100 @ 10mA, 1V
Power - Max 225 mW 300 mW - 225 mW
Frequency - Transition 250MHz 250MHz - 300MHz
Operating Temperature - -55°C ~ 150°C (TJ) - -
Mounting Type Surface Mount Surface Mount - Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 - TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) - SOT-23-3 (TO-236)

Related Product By Categories

PZT2907AT1G
PZT2907AT1G
onsemi
TRANS PNP 60V 0.6A SOT223
TIP35CW
TIP35CW
STMicroelectronics
TRANS NPN 100V 25A TO247-3
BD13610STU
BD13610STU
onsemi
TRANS PNP 45V 1.5A TO126-3
BCP56-16/DG/B2115
BCP56-16/DG/B2115
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
BC857B-AU_R1_000A1
BC857B-AU_R1_000A1
Panjit International Inc.
TRANS PNP 45V 0.1A SOT23
MMBT2484
MMBT2484
Fairchild Semiconductor
TRANS NPN 60V 0.1A SOT23-3
BC847BWH6327XTSA1
BC847BWH6327XTSA1
Infineon Technologies
TRANS NPN 45V 0.1A SOT323
2N2907AP
2N2907AP
Microchip Technology
SMALL-SIGNAL BJT
TIP126-BP
TIP126-BP
Micro Commercial Co
TRANS PNP DARL 80V 5A TO220AB
BCX 56-10 E6327
BCX 56-10 E6327
Infineon Technologies
TRANS NPN 80V 1A SOT89
BC857BW/ZLX
BC857BW/ZLX
Nexperia USA Inc.
TRANS SOT323
BC857AQBAZ
BC857AQBAZ
Nexperia USA Inc.
BC857AQB/SOT8015/DFN1110D-3

Related Product By Brand

BAT5404E6327HTSA1
BAT5404E6327HTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 30V SOT23
BAV70UE6327
BAV70UE6327
Infineon Technologies
HIGH SPEED SWITCHING DIODE
BAT5405E6327HTSA1
BAT5405E6327HTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 30V SOT23
BAV 99S H6827
BAV 99S H6827
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT363
BC856A-E6327
BC856A-E6327
Infineon Technologies
BIPOLAR GEN PURPOSE TRANSISTOR
BC80740WE6327BTSA1
BC80740WE6327BTSA1
Infineon Technologies
TRANS PNP 45V 0.5A SOT323
SPP20N60C3
SPP20N60C3
Infineon Technologies
POWER FIELD-EFFECT TRANSISTOR, 2
BSS138W L6327
BSS138W L6327
Infineon Technologies
MOSFET N-CH 60V 280MA SOT323-3
FF600R12ME4CB11BPSA1
FF600R12ME4CB11BPSA1
Infineon Technologies
MEDIUM POWER ECONO AG-ECONOD-411
IRS44273LTRPBF
IRS44273LTRPBF
Infineon Technologies
IC GATE DRVR LOW-SIDE SOT23-5
BTT60302ERAXUMA1
BTT60302ERAXUMA1
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 TDSO-14
TLE8104EXUMA2
TLE8104EXUMA2
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 DSO-20