BSS138W L6327
  • Share:

Infineon Technologies BSS138W L6327

Manufacturer No:
BSS138W L6327
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 280MA SOT323-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSS138W L6327, produced by Infineon Technologies, is an N-Channel Small Signal MOSFET designed for a variety of applications. This component is part of Infineon's broad portfolio of N and P-Channel Small Signal MOSFETs, known for their high reliability and manufacturing quality. The BSS138W is packaged in the SOT323 format, making it suitable for space-constrained designs. It is particularly useful in automotive and industrial sectors due to its compliance with automotive standards and its ability to operate in a wide range of temperatures.

Key Specifications

Parameter Symbol Conditions Unit Min Typ Max
Drain to Source Voltage VDSS V 60
Gate to Source Voltage VGSS V ±20
Continuous Drain Current ID TA = 25°C A 0.28
Pulsed Drain Current ID A 0.84
On-State Resistance RDS(on) VGS = 10 V, ID = 0.22 A Ω 2.1 3.5
Operating and Storage Junction Temperature Range TJ, TSTG °C -55 150
Maximum Lead Temperature for Soldering Purposes TL 1/16” from Case for 10 Seconds °C 300
Thermal Resistance, Junction to Ambient RθJA °C/W 367

Key Features

  • Enhancement Mode: The BSS138W operates in enhancement mode, requiring a positive gate-source voltage to create a conductive channel.
  • Logic Level: This MOSFET is designed to be driven by logic-level signals, making it compatible with a wide range of digital circuits.
  • Avalanche Rated: The device is capable of withstanding avalanche conditions, enhancing its reliability in demanding applications.
  • Fast Switching: It features fast switching times, which are crucial for high-frequency applications.
  • Dv/dt Rated: The MOSFET is rated for high dv/dt (voltage change over time) conditions, ensuring robust performance in dynamic environments.
  • Pb-free and RoHS Compliant: The component is lead-free and halogen-free, complying with environmental regulations.
  • Qualified According to Automotive Standards: It meets the stringent requirements of the automotive industry, including AEC Q101 qualification.
  • Compact Package: The SOT323 package is compact, saving PCB space and facilitating dense designs.
  • Low RDS(on): The low on-state resistance minimizes power losses, contributing to higher efficiency and extended battery life.

Applications

  • LED Lighting: Suitable for LED lighting systems due to its low power consumption and high reliability.
  • ADAS (Advanced Driver Assistance Systems): Used in various automotive safety and convenience systems.
  • Body Control Units: Employed in body control modules for vehicles, managing functions like lighting, wipers, and more.
  • SMPS (Switch-Mode Power Supplies): Ideal for power supply applications requiring high efficiency and fast switching.
  • Motor Control: Used in motor control circuits for small servo motors and other low-voltage, low-current motor applications.
  • Power MOSFET Gate Drivers: Often used to drive the gates of power MOSFETs in various power management circuits.

Q & A

  1. What is the maximum drain to source voltage (VDSS) of the BSS138W?

    The maximum drain to source voltage (VDSS) is 60 V.

  2. What is the typical on-state resistance (RDS(on)) of the BSS138W?

    The typical on-state resistance (RDS(on)) is 2.1 Ω at VGS = 10 V and ID = 0.22 A.

  3. What is the operating temperature range of the BSS138W?

    The operating and storage junction temperature range is -55°C to 150°C.

  4. Is the BSS138W RoHS compliant?

    Yes, the BSS138W is RoHS compliant and halogen-free.

  5. What are the typical applications of the BSS138W?

    The BSS138W is typically used in LED lighting, ADAS, body control units, SMPS, and motor control applications.

  6. What is the maximum continuous drain current (ID) of the BSS138W?

    The maximum continuous drain current (ID) is 0.28 A at TA = 25°C.

  7. What is the thermal resistance (RθJA) of the BSS138W?

    The thermal resistance (RθJA) is 367 °C/W).

  8. Is the BSS138W qualified according to automotive standards?

    Yes, the BSS138W is qualified according to automotive standards, including AEC Q101).

  9. What package type does the BSS138W come in?

    The BSS138W comes in the SOT323 package).

  10. What are the benefits of the low RDS(on) in the BSS138W?

    The low RDS(on) provides higher efficiency and extends battery life by minimizing power losses).

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:280mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3.5Ohm @ 220mA, 10V
Vgs(th) (Max) @ Id:1.4V @ 26µA
Gate Charge (Qg) (Max) @ Vgs:1.5 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:43 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):500mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT323
Package / Case:SC-70, SOT-323
0 Remaining View Similar

In Stock

-
115

Please send RFQ , we will respond immediately.

Same Series
BSS138WH6327XTSA1
BSS138WH6327XTSA1
MOSFET N-CH 60V 280MA SOT323-3
BSS138WH6433XTMA1
BSS138WH6433XTMA1
MOSFET N-CH 60V 280MA SOT323-3
BSS138W E6433
BSS138W E6433
MOSFET N-CH 60V 280MA SOT323-3
BSS138W E6327
BSS138W E6327
MOSFET N-CH 60V 280MA SOT323-3
BSS138W L6433
BSS138W L6433
MOSFET N-CH 60V 280MA SOT323-3

Similar Products

Part Number BSS138W L6327 BSS138W E6327
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 280mA (Ta) 280mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.5Ohm @ 220mA, 10V 3.5Ohm @ 220mA, 10V
Vgs(th) (Max) @ Id 1.4V @ 26µA 1.4V @ 26µA
Gate Charge (Qg) (Max) @ Vgs 1.5 nC @ 10 V 1.5 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 43 pF @ 25 V 43 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 500mW (Ta) 500mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-SOT323 PG-SOT323
Package / Case SC-70, SOT-323 SC-70, SOT-323

Related Product By Categories

AO3407A
AO3407A
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V 4.3A SOT23-3L
NCV8440ASTT1G
NCV8440ASTT1G
onsemi
MOSFET N-CH 59V 2.6A SOT223
IRFB3607PBF
IRFB3607PBF
Infineon Technologies
MOSFET N-CH 75V 80A TO220AB
STW58N65DM2AG
STW58N65DM2AG
STMicroelectronics
MOSFET N-CH 650V 48A TO247
STD7ANM60N
STD7ANM60N
STMicroelectronics
MOSFET N-CH 600V 5A DPAK
STH315N10F7-6
STH315N10F7-6
STMicroelectronics
MOSFET N-CH 100V 180A H2PAK-6
BUK9635-55A,118
BUK9635-55A,118
Nexperia USA Inc.
MOSFET N-CH 55V 34A D2PAK
STP45N10F7
STP45N10F7
STMicroelectronics
MOSFET N-CH 100V 45A TO220
STF3NK100Z
STF3NK100Z
STMicroelectronics
MOSFET N-CH 1000V 2.5A TO220FP
FDMA6676PZ
FDMA6676PZ
onsemi
MOSFET P-CH 30V 11A 6MICROFET
STD85N3LH5
STD85N3LH5
STMicroelectronics
MOSFET N-CH 30V 80A DPAK
MCH3477-TL-W
MCH3477-TL-W
onsemi
MOSFET N-CH 20V 4.5A SC70

Related Product By Brand

BAS70-06E6433
BAS70-06E6433
Infineon Technologies
SCHOTTKY DIODE - HIGH SPEED SWIT
BAS28E6359HTMA1
BAS28E6359HTMA1
Infineon Technologies
DIODE GP 80V 100MA SOT143
BC847CB5000
BC847CB5000
Infineon Technologies
BIPOLAR TRANSISTOR TRANSISTOR
BC 846A E6433
BC 846A E6433
Infineon Technologies
TRANS NPN 65V 0.1A SOT-23
IPG20N04S4L08AATMA1
IPG20N04S4L08AATMA1
Infineon Technologies
MOSFET 2N-CH 40V 20A 8TDSON
BSS138W E6433
BSS138W E6433
Infineon Technologies
MOSFET N-CH 60V 280MA SOT323-3
FF600R12ME4PB72BPSA1
FF600R12ME4PB72BPSA1
Infineon Technologies
MEDIUM POWER ECONO
FF600R12ME4CB11BOSA1
FF600R12ME4CB11BOSA1
Infineon Technologies
IGBT MOD 1200V 1060A 4050W
BTS50202EKAXUMA2
BTS50202EKAXUMA2
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 DSO-14
BTS716GBXUMA1
BTS716GBXUMA1
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 DSO-20
BTS5030-2EKA
BTS5030-2EKA
Infineon Technologies
BTS5030 - PROFET - SMART HIGH SI
BSP452 E6327
BSP452 E6327
Infineon Technologies
IC PWR SWTCH N-CHAN 1:1 SOT223-4