BSS138W L6327
  • Share:

Infineon Technologies BSS138W L6327

Manufacturer No:
BSS138W L6327
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 280MA SOT323-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSS138W L6327, produced by Infineon Technologies, is an N-Channel Small Signal MOSFET designed for a variety of applications. This component is part of Infineon's broad portfolio of N and P-Channel Small Signal MOSFETs, known for their high reliability and manufacturing quality. The BSS138W is packaged in the SOT323 format, making it suitable for space-constrained designs. It is particularly useful in automotive and industrial sectors due to its compliance with automotive standards and its ability to operate in a wide range of temperatures.

Key Specifications

Parameter Symbol Conditions Unit Min Typ Max
Drain to Source Voltage VDSS V 60
Gate to Source Voltage VGSS V ±20
Continuous Drain Current ID TA = 25°C A 0.28
Pulsed Drain Current ID A 0.84
On-State Resistance RDS(on) VGS = 10 V, ID = 0.22 A Ω 2.1 3.5
Operating and Storage Junction Temperature Range TJ, TSTG °C -55 150
Maximum Lead Temperature for Soldering Purposes TL 1/16” from Case for 10 Seconds °C 300
Thermal Resistance, Junction to Ambient RθJA °C/W 367

Key Features

  • Enhancement Mode: The BSS138W operates in enhancement mode, requiring a positive gate-source voltage to create a conductive channel.
  • Logic Level: This MOSFET is designed to be driven by logic-level signals, making it compatible with a wide range of digital circuits.
  • Avalanche Rated: The device is capable of withstanding avalanche conditions, enhancing its reliability in demanding applications.
  • Fast Switching: It features fast switching times, which are crucial for high-frequency applications.
  • Dv/dt Rated: The MOSFET is rated for high dv/dt (voltage change over time) conditions, ensuring robust performance in dynamic environments.
  • Pb-free and RoHS Compliant: The component is lead-free and halogen-free, complying with environmental regulations.
  • Qualified According to Automotive Standards: It meets the stringent requirements of the automotive industry, including AEC Q101 qualification.
  • Compact Package: The SOT323 package is compact, saving PCB space and facilitating dense designs.
  • Low RDS(on): The low on-state resistance minimizes power losses, contributing to higher efficiency and extended battery life.

Applications

  • LED Lighting: Suitable for LED lighting systems due to its low power consumption and high reliability.
  • ADAS (Advanced Driver Assistance Systems): Used in various automotive safety and convenience systems.
  • Body Control Units: Employed in body control modules for vehicles, managing functions like lighting, wipers, and more.
  • SMPS (Switch-Mode Power Supplies): Ideal for power supply applications requiring high efficiency and fast switching.
  • Motor Control: Used in motor control circuits for small servo motors and other low-voltage, low-current motor applications.
  • Power MOSFET Gate Drivers: Often used to drive the gates of power MOSFETs in various power management circuits.

Q & A

  1. What is the maximum drain to source voltage (VDSS) of the BSS138W?

    The maximum drain to source voltage (VDSS) is 60 V.

  2. What is the typical on-state resistance (RDS(on)) of the BSS138W?

    The typical on-state resistance (RDS(on)) is 2.1 Ω at VGS = 10 V and ID = 0.22 A.

  3. What is the operating temperature range of the BSS138W?

    The operating and storage junction temperature range is -55°C to 150°C.

  4. Is the BSS138W RoHS compliant?

    Yes, the BSS138W is RoHS compliant and halogen-free.

  5. What are the typical applications of the BSS138W?

    The BSS138W is typically used in LED lighting, ADAS, body control units, SMPS, and motor control applications.

  6. What is the maximum continuous drain current (ID) of the BSS138W?

    The maximum continuous drain current (ID) is 0.28 A at TA = 25°C.

  7. What is the thermal resistance (RθJA) of the BSS138W?

    The thermal resistance (RθJA) is 367 °C/W).

  8. Is the BSS138W qualified according to automotive standards?

    Yes, the BSS138W is qualified according to automotive standards, including AEC Q101).

  9. What package type does the BSS138W come in?

    The BSS138W comes in the SOT323 package).

  10. What are the benefits of the low RDS(on) in the BSS138W?

    The low RDS(on) provides higher efficiency and extends battery life by minimizing power losses).

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:280mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3.5Ohm @ 220mA, 10V
Vgs(th) (Max) @ Id:1.4V @ 26µA
Gate Charge (Qg) (Max) @ Vgs:1.5 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:43 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):500mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT323
Package / Case:SC-70, SOT-323
0 Remaining View Similar

In Stock

-
115

Please send RFQ , we will respond immediately.

Same Series
BSS138WH6327XTSA1
BSS138WH6327XTSA1
MOSFET N-CH 60V 280MA SOT323-3
BSS138W E6433
BSS138W E6433
MOSFET N-CH 60V 280MA SOT323-3
BSS138W E6327
BSS138W E6327
MOSFET N-CH 60V 280MA SOT323-3
BSS138W L6327
BSS138W L6327
MOSFET N-CH 60V 280MA SOT323-3
BSS138W L6433
BSS138W L6433
MOSFET N-CH 60V 280MA SOT323-3

Similar Products

Part Number BSS138W L6327 BSS138W E6327
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 280mA (Ta) 280mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.5Ohm @ 220mA, 10V 3.5Ohm @ 220mA, 10V
Vgs(th) (Max) @ Id 1.4V @ 26µA 1.4V @ 26µA
Gate Charge (Qg) (Max) @ Vgs 1.5 nC @ 10 V 1.5 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 43 pF @ 25 V 43 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 500mW (Ta) 500mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-SOT323 PG-SOT323
Package / Case SC-70, SOT-323 SC-70, SOT-323

Related Product By Categories

BSS123NH6327XTSA1
BSS123NH6327XTSA1
Infineon Technologies
MOSFET N-CH 100V 190MA SOT23-3
AO3407A
AO3407A
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V 4.3A SOT23-3L
STP13NK60Z
STP13NK60Z
STMicroelectronics
MOSFET N-CH 600V 13A TO220AB
FDB38N30U
FDB38N30U
onsemi
MOSFET N CH 300V 38A D2PAK
STB170NF04
STB170NF04
STMicroelectronics
MOSFET N-CH 40V 80A D2PAK
STD4NK60ZT4
STD4NK60ZT4
STMicroelectronics
MOSFET N-CH 600V 4A DPAK
PSMN0R9-25YLDX
PSMN0R9-25YLDX
Nexperia USA Inc.
MOSFET N-CH 25V 300A LFPAK56
STP4NK80ZFP
STP4NK80ZFP
STMicroelectronics
MOSFET N-CH 800V 3A TO220FP
PMV50XP215
PMV50XP215
NXP USA Inc.
P-CHANNEL MOSFET
BSS138K
BSS138K
onsemi
MOSFET N-CH 50V 220MA SOT23-3
FDMC4435BZ-F127-L701
FDMC4435BZ-F127-L701
onsemi
SINGLE ST3 P Z MLP3.3X3.3
NTNS3A65PZT5G
NTNS3A65PZT5G
onsemi
MOSFET P-CH 20V 281MA SOT883

Related Product By Brand

BAV70WH6327XTSA1
BAV70WH6327XTSA1
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT323
BAS40B5003
BAS40B5003
Infineon Technologies
RECTIFIER DIODE, SCHOTTKY
BC857SH6827XTSA1
BC857SH6827XTSA1
Infineon Technologies
TRANS 2PNP 45V 0.1A SOT363
BFS 17P E6433
BFS 17P E6433
Infineon Technologies
RF TRANS NPN 15V 1.4GHZ SOT23-3
BC857CE6327HTSA1
BC857CE6327HTSA1
Infineon Technologies
TRANS PNP 45V 0.1A SOT23
BC856A-E6327
BC856A-E6327
Infineon Technologies
BIPOLAR GEN PURPOSE TRANSISTOR
BCX53E6327HTSA1
BCX53E6327HTSA1
Infineon Technologies
TRANS PNP 80V 1A SOT89
IRF640NSTRLPBF
IRF640NSTRLPBF
Infineon Technologies
MOSFET N-CH 200V 18A D2PAK
FF600R12ME4PBOSA1
FF600R12ME4PBOSA1
Infineon Technologies
IGBT MODULE VCES 600V 600A
BTS4140NHUMA1
BTS4140NHUMA1
Infineon Technologies
IC PWR SWTCH N-CHAN 1:1 SOT223-4
BTS6163DAUMA1
BTS6163DAUMA1
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 TO252-5
CY7C1041DV33-10ZSXIT
CY7C1041DV33-10ZSXIT
Infineon Technologies
IC SRAM 4MBIT PARALLEL 44TSOP II