BSS138W L6433
  • Share:

Infineon Technologies BSS138W L6433

Manufacturer No:
BSS138W L6433
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 280MA SOT323-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSS138W, produced by Infineon Technologies, is an N-Channel Small Signal MOSFET designed for a variety of applications requiring low voltage and low current. This device is packaged in the SOT323 format, making it compact and suitable for space-constrained designs. It is part of Infineon's broad portfolio of N and P-Channel Small Signal MOSFETs, known for their high reliability and manufacturing quality. The BSS138W is particularly suited for applications such as LED lighting, Advanced Driver Assistance Systems (ADAS), body control units, Switch Mode Power Supplies (SMPS), and motor control.

Key Specifications

Parameter Symbol Conditions Unit Min. Max.
Drain to Source Voltage VDSS VGS = 0 V, ID = 250 µA V - - 60
Gate to Source Voltage VGSS - V - - ±20
Drain Current - Continuous ID - A - - 0.28
Drain Current - Pulsed ID,pulse - A - - 1.12
On-Resistance RDS(on) VGS = 10 V, ID = 0.22 A Ω 2.1 3.5 -
Thermal Resistance, Junction to Ambient RthJA - K/W - - 250
Operating and Storage Temperature Tj, Tstg - °C -55 - 150

Key Features

  • Enhancement mode
  • Logic level
  • Avalanche rated
  • Fast switching
  • Dv/dt rated
  • Pb-free lead-plating and RoHS compliant, halogen-free
  • Qualified according to automotive standards (AEC Q101)
  • PPAP capable
  • Low RDS(on) for higher efficiency and extended battery life
  • Compact SOT323 package to save PCB space
  • Best-in-class quality and reliability

Applications

  • LED lighting
  • Advanced Driver Assistance Systems (ADAS)
  • Body control units
  • Switch Mode Power Supplies (SMPS)
  • Motor control
  • Small servo motor control
  • Power MOSFET gate drivers

Q & A

  1. What is the maximum drain to source voltage of the BSS138W?

    The maximum drain to source voltage (VDSS) is 60 V.

  2. What is the typical on-resistance of the BSS138W?

    The typical on-resistance (RDS(on)) is 3.5 Ω at VGS = 10 V and ID = 0.22 A.

  3. What is the maximum continuous drain current of the BSS138W?

    The maximum continuous drain current (ID) is 0.28 A.

  4. Is the BSS138W RoHS compliant?
  5. What are the operating and storage temperature ranges for the BSS138W?

    The operating and storage temperature ranges are -55°C to 150°C.

  6. What package type is the BSS138W available in?

    The BSS138W is available in the SOT323 package.

  7. Is the BSS138W qualified according to automotive standards?
  8. What are some typical applications of the BSS138W?
  9. What is the thermal resistance, junction to ambient, of the BSS138W? thJA), is 250 K/W.

  10. Does the BSS138W have fast switching capabilities?

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:280mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3.5Ohm @ 220mA, 10V
Vgs(th) (Max) @ Id:1.4V @ 26µA
Gate Charge (Qg) (Max) @ Vgs:1.5 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:43 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):500mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT323
Package / Case:SC-70, SOT-323
0 Remaining View Similar

In Stock

-
59

Please send RFQ , we will respond immediately.

Same Series
BSS138WH6327XTSA1
BSS138WH6327XTSA1
MOSFET N-CH 60V 280MA SOT323-3
BSS138WH6433XTMA1
BSS138WH6433XTMA1
MOSFET N-CH 60V 280MA SOT323-3
BSS138W E6433
BSS138W E6433
MOSFET N-CH 60V 280MA SOT323-3
BSS138W E6327
BSS138W E6327
MOSFET N-CH 60V 280MA SOT323-3
BSS138W L6433
BSS138W L6433
MOSFET N-CH 60V 280MA SOT323-3

Similar Products

Part Number BSS138W L6433 BSS138W E6433
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Discontinued at Digi-Key
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 280mA (Ta) 280mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.5Ohm @ 220mA, 10V 3.5Ohm @ 220mA, 10V
Vgs(th) (Max) @ Id 1.4V @ 26µA 1.4V @ 26µA
Gate Charge (Qg) (Max) @ Vgs 1.5 nC @ 10 V 1.5 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 43 pF @ 25 V 43 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 500mW (Ta) 500mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-SOT323 PG-SOT323
Package / Case SC-70, SOT-323 SC-70, SOT-323

Related Product By Categories

IRF4905PBF
IRF4905PBF
Infineon Technologies
MOSFET P-CH 55V 74A TO220AB
NTMFS5C646NLT1G
NTMFS5C646NLT1G
onsemi
MOSFET N-CH 60V 19A 5DFN
STF13N80K5
STF13N80K5
STMicroelectronics
MOSFET N-CH 800V 12A TO220FP
BUK9M24-40EX
BUK9M24-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 30A LFPAK33
BSS138K
BSS138K
onsemi
MOSFET N-CH 50V 220MA SOT23-3
2N7002AQ-13
2N7002AQ-13
Diodes Incorporated
MOSFET N-CH 60V 180MA SOT23
FDMC4435BZ-F127-L701
FDMC4435BZ-F127-L701
onsemi
SINGLE ST3 P Z MLP3.3X3.3
NTMFS4C55NT1G
NTMFS4C55NT1G
onsemi
MOSFET N-CH 30V 78A SO8FL
NTMFS5C612NLT1G
NTMFS5C612NLT1G
onsemi
MOSFET N-CH 60V 36A/235A 5DFN
NTB52N10T4G
NTB52N10T4G
onsemi
MOSFET N-CH 100V 52A D2PAK
NVMFS6B25NLT1G
NVMFS6B25NLT1G
onsemi
MOSFET N-CH 100V 8A/33A 5DFN
PMZB290UN/FYL
PMZB290UN/FYL
NXP USA Inc.
PMZB290UN/FYL

Related Product By Brand

BAS7005WH6327XTSA1
BAS7005WH6327XTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 70V SOT323
BAS4007WH6327
BAS4007WH6327
Infineon Technologies
SCHOTTKY DIODE
BAS4004E6327HTSA1
BAS4004E6327HTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 40V SOT23
BAV 70W E6433
BAV 70W E6433
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT323
BAS16WE6327HTSA1
BAS16WE6327HTSA1
Infineon Technologies
DIODE GEN PURP 80V 250MA SOT323
BC847BWE6327BTSA1
BC847BWE6327BTSA1
Infineon Technologies
TRANS NPN 45V 0.1A SOT-323
IRLML9301TRPBF
IRLML9301TRPBF
Infineon Technologies
MOSFET P-CH 30V 3.6A SOT23
FF600R12ME4B72BOSA1
FF600R12ME4B72BOSA1
Infineon Technologies
IGBT MOD 1200V 1200A 20MW
FF600R12ME4CB11BOSA1
FF600R12ME4CB11BOSA1
Infineon Technologies
IGBT MOD 1200V 1060A 4050W
TLE6251DST
TLE6251DST
Infineon Technologies
IC TRANSCEIVER FULL 1/1 DSO-8
BTS500851TMAATMA1
BTS500851TMAATMA1
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 TO220-7
IR3898MTRPBF
IR3898MTRPBF
Infineon Technologies
IC REG BUCK ADJUSTABLE 6A 16PQFN