SPP20N60C3HKSA1
  • Share:

Infineon Technologies SPP20N60C3HKSA1

Manufacturer No:
SPP20N60C3HKSA1
Manufacturer:
Infineon Technologies
Package:
Bulk
Description:
MOSFET N-CH 600V 20.7A TO220-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The SPP20N60C3HKSA1 is a high-performance power MOSFET from Infineon Technologies, part of their CoolMOS™ C3 series. This device is designed for high-efficiency switching applications, particularly in power supplies, motor control, and other high-power electronic systems. It features advanced technology that minimizes losses and maximizes reliability.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDS) 600 V
Gate-Source Voltage (VGS) ±20 V
Continuous Drain Current (ID) 20 A
Pulse Drain Current (IDM) 40 A
On-State Resistance (RDS(on)) 190
Power Dissipation (Ptot) at TC = 25°C 150 W
Junction-to-Case Thermal Resistance (RthJC) 1.25 K/W
Junction-to-Ambient Thermal Resistance (RthJA) 62.5 K/W
Turn-On Delay Time (td(on)) 10 ns
Rise Time (tr) 20 ns
Turn-Off Delay Time (td(off)) 30 ns
Fall Time (tf) 20 ns

Key Features

  • High Efficiency: The CoolMOS™ C3 technology ensures low on-state resistance and minimal switching losses, making it highly efficient for power switching applications.
  • High Voltage Capability: With a drain-source voltage rating of 600V, this MOSFET is suitable for high-voltage applications.
  • Low Thermal Resistance: The device features low thermal resistance, enhancing heat dissipation and reliability.
  • Fast Switching Times: Quick turn-on and turn-off times reduce switching losses and improve overall system performance.
  • Robust Package Options: Available in various packages such as TO-220, TO-262, and others, offering flexibility in design and application.

Applications

  • Power Supplies: Suitable for use in switch-mode power supplies, including DC-DC converters and AC-DC converters.
  • Motor Control: Used in motor drive applications due to its high current handling and fast switching capabilities.
  • Industrial Automation: Applied in various industrial automation systems requiring high power and efficiency.
  • Automotive Systems: Can be used in automotive applications such as electric vehicle charging systems and power management.
  • Renewable Energy Systems: Utilized in solar and wind power systems for efficient power conversion.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the SPP20N60C3HKSA1?

    The maximum drain-source voltage is 600V.

  2. What is the continuous drain current (ID) rating of this MOSFET?

    The continuous drain current rating is 20A.

  3. What is the on-state resistance (RDS(on)) of the SPP20N60C3HKSA1?

    The on-state resistance is 190 mΩ.

  4. What are the typical applications of the SPP20N60C3HKSA1?

    It is commonly used in power supplies, motor control, industrial automation, automotive systems, and renewable energy systems.

  5. What package options are available for the SPP20N60C3HKSA1?

    It is available in packages such as TO-220, TO-262, and others.

  6. What is the junction-to-case thermal resistance (RthJC) of this MOSFET?

    The junction-to-case thermal resistance is 1.25 K/W.

  7. What are the turn-on and turn-off delay times of the SPP20N60C3HKSA1?

    The turn-on delay time is 10 ns, and the turn-off delay time is 30 ns.

  8. Is the SPP20N60C3HKSA1 suitable for high-frequency applications?

    Yes, it is suitable due to its fast switching times and low on-state resistance.

  9. Can the SPP20N60C3HKSA1 be used in automotive applications?

    Yes, it can be used in automotive applications with the express written approval of Infineon Technologies.

  10. What is the maximum junction temperature (Tj(max)) for the SPP20N60C3HKSA1?

    The maximum junction temperature is 150°C.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:20.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:190mOhm @ 13.1A, 10V
Vgs(th) (Max) @ Id:3.9V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:114 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2400 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):208W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3-1
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

-
278

Please send RFQ , we will respond immediately.

Same Series
ATS-15B-75-C1-R0
ATS-15B-75-C1-R0
HEATSINK 25X25X20MM R-TAB

Similar Products

Part Number SPP20N60C3HKSA1 SPP20N60C3XKSA1 SPP20N65C3HKSA1 SPP24N60C3HKSA1
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Active Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 20.7A (Tc) 20.7A (Tc) 20.7A (Tc) 24.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 190mOhm @ 13.1A, 10V 190mOhm @ 13.1A, 10V 190mOhm @ 13.1A, 10V 160mOhm @ 15.4A, 10V
Vgs(th) (Max) @ Id 3.9V @ 1mA 3.9V @ 1mA 3.9V @ 1mA 3.9V @ 1.2mA
Gate Charge (Qg) (Max) @ Vgs 114 nC @ 10 V 114 nC @ 10 V 114 nC @ 10 V 135 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2400 pF @ 25 V 2400 pF @ 25 V 2400 pF @ 25 V 3000 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 208W (Tc) 208W (Tc) 208W (Tc) 240W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Supplier Device Package PG-TO220-3-1 PG-TO220-3-1 PG-TO220-3-1 PG-TO220-3-1
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3

Related Product By Categories

BUK7240-100A,118
BUK7240-100A,118
Nexperia USA Inc.
MOSFET N-CH 100V 34A DPAK
PSMN2R0-30YLE,115
PSMN2R0-30YLE,115
Nexperia USA Inc.
MOSFET N-CH 30V 100A LFPAK56
FDBL86361-F085
FDBL86361-F085
onsemi
MOSFET N-CH 80V 300A 8HPSOF
STQ1HNK60R-AP
STQ1HNK60R-AP
STMicroelectronics
MOSFET N-CH 600V 400MA TO92-3
BUK9M24-40EX
BUK9M24-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 30A LFPAK33
PSMN0R9-25YLDX
PSMN0R9-25YLDX
Nexperia USA Inc.
MOSFET N-CH 25V 300A LFPAK56
FDMC4435BZ-F127-L701
FDMC4435BZ-F127-L701
onsemi
SINGLE ST3 P Z MLP3.3X3.3
BUK762R6-60E,118
BUK762R6-60E,118
Nexperia USA Inc.
MOSFET N-CH 60V 120A D2PAK
STW88N65M5-4
STW88N65M5-4
STMicroelectronics
MOSFET N-CH 650V 84A TO247-4L
2N7002TC
2N7002TC
Diodes Incorporated
MOSFET N-CH 60V 115MA SOT23-3
FQD13N10LTM_NBEL001
FQD13N10LTM_NBEL001
onsemi
MOSFET N-CH 100V 10A DPAK
NTB52N10T4G
NTB52N10T4G
onsemi
MOSFET N-CH 100V 52A D2PAK

Related Product By Brand

BAS7006B5003
BAS7006B5003
Infineon Technologies
SCHOTTKY DIODE
BAS70-06E6327
BAS70-06E6327
Infineon Technologies
BAS70 - HIGH SPEED SWITCHING, CL
BAS4007WH6327XTSA1
BAS4007WH6327XTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 40V SOT343
BAV74E6327
BAV74E6327
Infineon Technologies
RECTIFIER DIODE
BCV62BE6327HTSA1
BCV62BE6327HTSA1
Infineon Technologies
TRANS 2PNP 30V 0.1A SOT143
BC846SH6727XTSA1
BC846SH6727XTSA1
Infineon Technologies
TRANS 2NPN 65V 0.1A SOT363
BCV26E327
BCV26E327
Infineon Technologies
TRANS PNP DARL 30V 0.5A SOT23
IRLML6346TRPBF
IRLML6346TRPBF
Infineon Technologies
MOSFET N-CH 30V 3.4A SOT23
IRFB4227PBF
IRFB4227PBF
Infineon Technologies
MOSFET N-CH 200V 65A TO220AB
BSS138WH6433XTMA1
BSS138WH6433XTMA1
Infineon Technologies
MOSFET N-CH 60V 280MA SOT323-3
IKW75N60TA
IKW75N60TA
Infineon Technologies
IKW75N60 - AUTOMOTIVE IGBT DISCR
CYUSB3014-BZXI
CYUSB3014-BZXI
Infineon Technologies
IC ARM9 USB CONTROLLER 121FBGA