SPP20N60C3HKSA1
  • Share:

Infineon Technologies SPP20N60C3HKSA1

Manufacturer No:
SPP20N60C3HKSA1
Manufacturer:
Infineon Technologies
Package:
Bulk
Description:
MOSFET N-CH 600V 20.7A TO220-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The SPP20N60C3HKSA1 is a high-performance power MOSFET from Infineon Technologies, part of their CoolMOS™ C3 series. This device is designed for high-efficiency switching applications, particularly in power supplies, motor control, and other high-power electronic systems. It features advanced technology that minimizes losses and maximizes reliability.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDS) 600 V
Gate-Source Voltage (VGS) ±20 V
Continuous Drain Current (ID) 20 A
Pulse Drain Current (IDM) 40 A
On-State Resistance (RDS(on)) 190 mΩ
Power Dissipation (Ptot) at TC = 25°C 150 W
Junction-to-Case Thermal Resistance (RthJC) 1.25 K/W
Junction-to-Ambient Thermal Resistance (RthJA) 62.5 K/W
Turn-On Delay Time (td(on)) 10 ns
Rise Time (tr) 20 ns
Turn-Off Delay Time (td(off)) 30 ns
Fall Time (tf) 20 ns

Key Features

  • High Efficiency: The CoolMOS™ C3 technology ensures low on-state resistance and minimal switching losses, making it highly efficient for power switching applications.
  • High Voltage Capability: With a drain-source voltage rating of 600V, this MOSFET is suitable for high-voltage applications.
  • Low Thermal Resistance: The device features low thermal resistance, enhancing heat dissipation and reliability.
  • Fast Switching Times: Quick turn-on and turn-off times reduce switching losses and improve overall system performance.
  • Robust Package Options: Available in various packages such as TO-220, TO-262, and others, offering flexibility in design and application.

Applications

  • Power Supplies: Suitable for use in switch-mode power supplies, including DC-DC converters and AC-DC converters.
  • Motor Control: Used in motor drive applications due to its high current handling and fast switching capabilities.
  • Industrial Automation: Applied in various industrial automation systems requiring high power and efficiency.
  • Automotive Systems: Can be used in automotive applications such as electric vehicle charging systems and power management.
  • Renewable Energy Systems: Utilized in solar and wind power systems for efficient power conversion.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the SPP20N60C3HKSA1?

    The maximum drain-source voltage is 600V.

  2. What is the continuous drain current (ID) rating of this MOSFET?

    The continuous drain current rating is 20A.

  3. What is the on-state resistance (RDS(on)) of the SPP20N60C3HKSA1?

    The on-state resistance is 190 mΩ.

  4. What are the typical applications of the SPP20N60C3HKSA1?

    It is commonly used in power supplies, motor control, industrial automation, automotive systems, and renewable energy systems.

  5. What package options are available for the SPP20N60C3HKSA1?

    It is available in packages such as TO-220, TO-262, and others.

  6. What is the junction-to-case thermal resistance (RthJC) of this MOSFET?

    The junction-to-case thermal resistance is 1.25 K/W.

  7. What are the turn-on and turn-off delay times of the SPP20N60C3HKSA1?

    The turn-on delay time is 10 ns, and the turn-off delay time is 30 ns.

  8. Is the SPP20N60C3HKSA1 suitable for high-frequency applications?

    Yes, it is suitable due to its fast switching times and low on-state resistance.

  9. Can the SPP20N60C3HKSA1 be used in automotive applications?

    Yes, it can be used in automotive applications with the express written approval of Infineon Technologies.

  10. What is the maximum junction temperature (Tj(max)) for the SPP20N60C3HKSA1?

    The maximum junction temperature is 150°C.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:20.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:190mOhm @ 13.1A, 10V
Vgs(th) (Max) @ Id:3.9V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:114 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2400 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):208W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3-1
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

-
278

Please send RFQ , we will respond immediately.

Same Series
ATS-15B-75-C1-R0
ATS-15B-75-C1-R0
HEATSINK 25X25X20MM R-TAB

Similar Products

Part Number SPP20N60C3HKSA1 SPP20N60C3XKSA1 SPP20N65C3HKSA1 SPP24N60C3HKSA1
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Active Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 20.7A (Tc) 20.7A (Tc) 20.7A (Tc) 24.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 190mOhm @ 13.1A, 10V 190mOhm @ 13.1A, 10V 190mOhm @ 13.1A, 10V 160mOhm @ 15.4A, 10V
Vgs(th) (Max) @ Id 3.9V @ 1mA 3.9V @ 1mA 3.9V @ 1mA 3.9V @ 1.2mA
Gate Charge (Qg) (Max) @ Vgs 114 nC @ 10 V 114 nC @ 10 V 114 nC @ 10 V 135 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2400 pF @ 25 V 2400 pF @ 25 V 2400 pF @ 25 V 3000 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 208W (Tc) 208W (Tc) 208W (Tc) 240W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Supplier Device Package PG-TO220-3-1 PG-TO220-3-1 PG-TO220-3-1 PG-TO220-3-1
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3

Related Product By Categories

BSS84PH6327XTSA2
BSS84PH6327XTSA2
Infineon Technologies
MOSFET P-CH 60V 170MA SOT23-3
PSMN4R0-30YLDX
PSMN4R0-30YLDX
Nexperia USA Inc.
MOSFET N-CH 30V 95A LFPAK56
FDBL0150N80
FDBL0150N80
onsemi
MOSFET N-CH 80V 300A 8HPSOF
2N7002-TP
2N7002-TP
Micro Commercial Co
MOSFET N-CH 60V 115MA SOT23
STD36P4LLF6
STD36P4LLF6
STMicroelectronics
MOSFET P-CH 40V 36A DPAK
NTLUS3A18PZTAG
NTLUS3A18PZTAG
onsemi
MOSFET P-CH 20V 5.1A 6UDFN
STB33N60M2
STB33N60M2
STMicroelectronics
MOSFET N-CH 600V 26A D2PAK
STP22NM60N
STP22NM60N
STMicroelectronics
MOSFET N-CH 600V 16A TO220AB
2N7002AQ-13
2N7002AQ-13
Diodes Incorporated
MOSFET N-CH 60V 180MA SOT23
STW15NB50
STW15NB50
STMicroelectronics
MOSFET N-CH 500V 14.6A TO247-3
PMV65XP/MIR
PMV65XP/MIR
Nexperia USA Inc.
MOSFET P-CH 20V 2.8A TO236AB
BSS138W-7-F-79
BSS138W-7-F-79
Diodes Incorporated
DIODE

Related Product By Brand

BAS 70-05 B5003
BAS 70-05 B5003
Infineon Technologies
DIODE ARRAY SCHOTTKY 70V SOT23
BC847PNE6327BTSA1
BC847PNE6327BTSA1
Infineon Technologies
TRANS NPN/PNP 45V 0.1A SOT363-6
BC817-16B5003
BC817-16B5003
Infineon Technologies
TRANS NPN 45V 0.5A SOT23-3
BC848BWH6327XTSA1
BC848BWH6327XTSA1
Infineon Technologies
TRANS NPN 30V 0.1A SOT323
BCP6925E6327HTSA1
BCP6925E6327HTSA1
Infineon Technologies
TRANS PNP 20V 1A SOT223-4
FF600R12ME4CB11BPSA1
FF600R12ME4CB11BPSA1
Infineon Technologies
MEDIUM POWER ECONO AG-ECONOD-411
IKW75N60TAFKSA1
IKW75N60TAFKSA1
Infineon Technologies
IGBT TRENCH/FS 600V 80A TO247-3
TLE6250G ITJKK
TLE6250G ITJKK
Infineon Technologies
IC TRANSCEIVER FULL 1/1 DSO-8
IRS44273LTRPBF
IRS44273LTRPBF
Infineon Technologies
IC GATE DRVR LOW-SIDE SOT23-5
BTS6163DAUMA1
BTS6163DAUMA1
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 TO252-5
CY7C68013A-128AXC
CY7C68013A-128AXC
Infineon Technologies
IC MCU USB PERIPH HI SPD 128LQFP
CY7C1061DV33-10BVXIT
CY7C1061DV33-10BVXIT
Infineon Technologies
IC SRAM 16MBIT PARALLEL 48VFBGA