SPP20N60C3HKSA1
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Infineon Technologies SPP20N60C3HKSA1

Manufacturer No:
SPP20N60C3HKSA1
Manufacturer:
Infineon Technologies
Package:
Bulk
Description:
MOSFET N-CH 600V 20.7A TO220-3
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The SPP20N60C3HKSA1 is a high-performance power MOSFET from Infineon Technologies, part of their CoolMOS™ C3 series. This device is designed for high-efficiency switching applications, particularly in power supplies, motor control, and other high-power electronic systems. It features advanced technology that minimizes losses and maximizes reliability.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDS) 600 V
Gate-Source Voltage (VGS) ±20 V
Continuous Drain Current (ID) 20 A
Pulse Drain Current (IDM) 40 A
On-State Resistance (RDS(on)) 190
Power Dissipation (Ptot) at TC = 25°C 150 W
Junction-to-Case Thermal Resistance (RthJC) 1.25 K/W
Junction-to-Ambient Thermal Resistance (RthJA) 62.5 K/W
Turn-On Delay Time (td(on)) 10 ns
Rise Time (tr) 20 ns
Turn-Off Delay Time (td(off)) 30 ns
Fall Time (tf) 20 ns

Key Features

  • High Efficiency: The CoolMOS™ C3 technology ensures low on-state resistance and minimal switching losses, making it highly efficient for power switching applications.
  • High Voltage Capability: With a drain-source voltage rating of 600V, this MOSFET is suitable for high-voltage applications.
  • Low Thermal Resistance: The device features low thermal resistance, enhancing heat dissipation and reliability.
  • Fast Switching Times: Quick turn-on and turn-off times reduce switching losses and improve overall system performance.
  • Robust Package Options: Available in various packages such as TO-220, TO-262, and others, offering flexibility in design and application.

Applications

  • Power Supplies: Suitable for use in switch-mode power supplies, including DC-DC converters and AC-DC converters.
  • Motor Control: Used in motor drive applications due to its high current handling and fast switching capabilities.
  • Industrial Automation: Applied in various industrial automation systems requiring high power and efficiency.
  • Automotive Systems: Can be used in automotive applications such as electric vehicle charging systems and power management.
  • Renewable Energy Systems: Utilized in solar and wind power systems for efficient power conversion.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the SPP20N60C3HKSA1?

    The maximum drain-source voltage is 600V.

  2. What is the continuous drain current (ID) rating of this MOSFET?

    The continuous drain current rating is 20A.

  3. What is the on-state resistance (RDS(on)) of the SPP20N60C3HKSA1?

    The on-state resistance is 190 mΩ.

  4. What are the typical applications of the SPP20N60C3HKSA1?

    It is commonly used in power supplies, motor control, industrial automation, automotive systems, and renewable energy systems.

  5. What package options are available for the SPP20N60C3HKSA1?

    It is available in packages such as TO-220, TO-262, and others.

  6. What is the junction-to-case thermal resistance (RthJC) of this MOSFET?

    The junction-to-case thermal resistance is 1.25 K/W.

  7. What are the turn-on and turn-off delay times of the SPP20N60C3HKSA1?

    The turn-on delay time is 10 ns, and the turn-off delay time is 30 ns.

  8. Is the SPP20N60C3HKSA1 suitable for high-frequency applications?

    Yes, it is suitable due to its fast switching times and low on-state resistance.

  9. Can the SPP20N60C3HKSA1 be used in automotive applications?

    Yes, it can be used in automotive applications with the express written approval of Infineon Technologies.

  10. What is the maximum junction temperature (Tj(max)) for the SPP20N60C3HKSA1?

    The maximum junction temperature is 150°C.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:20.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:190mOhm @ 13.1A, 10V
Vgs(th) (Max) @ Id:3.9V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:114 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2400 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):208W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3-1
Package / Case:TO-220-3
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Similar Products

Part Number SPP20N60C3HKSA1 SPP20N60C3XKSA1 SPP20N65C3HKSA1 SPP24N60C3HKSA1
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Active Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 20.7A (Tc) 20.7A (Tc) 20.7A (Tc) 24.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 190mOhm @ 13.1A, 10V 190mOhm @ 13.1A, 10V 190mOhm @ 13.1A, 10V 160mOhm @ 15.4A, 10V
Vgs(th) (Max) @ Id 3.9V @ 1mA 3.9V @ 1mA 3.9V @ 1mA 3.9V @ 1.2mA
Gate Charge (Qg) (Max) @ Vgs 114 nC @ 10 V 114 nC @ 10 V 114 nC @ 10 V 135 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2400 pF @ 25 V 2400 pF @ 25 V 2400 pF @ 25 V 3000 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 208W (Tc) 208W (Tc) 208W (Tc) 240W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Supplier Device Package PG-TO220-3-1 PG-TO220-3-1 PG-TO220-3-1 PG-TO220-3-1
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3

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