Overview
The SPP20N60C3XKSA1 is a high-performance N-channel MOSFET from Infineon Technologies, part of the CoolMOS™ C3 series. This device is designed to offer superior efficiency and reliability in various power management applications. The CoolMOS™ C3 technology is known for its low switching losses and high power density, making it an ideal choice for demanding power conversion systems.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| VDS (Drain-Source Voltage) | 650 | V |
| ID (Continuous Drain Current) | 20.7 | A |
| RDS(on) (On-Resistance) | 180 mΩ (typical at VGS = 10 V, ID = 10 A) | mΩ |
| VGS(th) (Threshold Voltage) | 2.5 - 4.0 | V |
| Tj(max) (Maximum Junction Temperature) | 150 | °C |
| Ciss (Input Capacitance) | 1100 pF (typical at VDS = 400 V, VGS = 0 V) | pF |
| Coss (Output Capacitance) | 220 pF (typical at VDS = 400 V, VGS = 0 V) | pF |
| Package | TO-220-3 | - |
Key Features
- Low Switching Losses: The CoolMOS™ C3 technology reduces switching losses, such as QG, Coss, and Eoss, enhancing overall efficiency.
- Best-in-Class Figure of Merit: Offers a superior figure of merit with low RDS(on)*QG and high switching frequency capability.
- Rugged Body Diode: Features a robust body diode suitable for various switching topologies.
- High Power Density: Enables the use of smaller packages without compromising on performance.
- Wide Range of Applications: Suitable for both hard and soft switching topologies, including PFC, LLC, and other high-power applications.
Applications
- Power Factor Correction (PFC): Ideal for PFC stages in power supplies due to its low switching losses and high efficiency.
- LLC Resonant Converters: Suitable for LLC topologies where high switching frequencies and low losses are critical.
- Server Power Supplies: Used in high-efficiency server power supplies to reduce energy losses and increase overall system efficiency.
- Telecom Rectifiers: Applied in high-efficiency telecom rectifiers to achieve efficiencies greater than 96%.
- Automotive and Industrial Systems: Can be used in automotive and industrial applications requiring high reliability and efficiency.
Q & A
- What is the maximum drain-source voltage (VDS) of the SPP20N60C3XKSA1?
The maximum drain-source voltage (VDS) is 650 V.
- What is the continuous drain current (ID) rating of this MOSFET?
The continuous drain current (ID) is 20.7 A.
- What is the typical on-resistance (RDS(on)) of the SPP20N60C3XKSA1?
The typical on-resistance (RDS(on)) is 180 mΩ at VGS = 10 V, ID = 10 A.
- What is the maximum junction temperature (Tj(max)) for this device?
The maximum junction temperature (Tj(max)) is 150°C.
- What package type is the SPP20N60C3XKSA1 available in?
The SPP20N60C3XKSA1 is available in the TO-220-3 package.
- What are the key benefits of using the CoolMOS™ C3 technology in this MOSFET?
The key benefits include reduced switching losses, best-in-class figure of merit, and the ability to increase switching frequency without loss in efficiency.
- Can the SPP20N60C3XKSA1 be used in automotive and industrial applications?
Yes, it can be used in automotive and industrial applications due to its high reliability and efficiency.
- What are some common applications for the SPP20N60C3XKSA1?
Common applications include PFC stages, LLC resonant converters, server power supplies, and high-efficiency telecom rectifiers.
- How does the SPP20N60C3XKSA1 contribute to reducing energy losses in power supplies?
It reduces energy losses by minimizing switching losses and increasing overall system efficiency, particularly in high-power applications.
- Is the SPP20N60C3XKSA1 suitable for use in life-support devices or systems?
It may be used in life-support devices or systems only with the express written approval of Infineon Technologies.
