BSS123NH6327XTSA1
  • Share:

Infineon Technologies BSS123NH6327XTSA1

Manufacturer No:
BSS123NH6327XTSA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 190MA SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSS123NH6327XTSA1 is an N-Channel Small Signal MOSFET produced by Infineon Technologies. It is part of Infineon's broad portfolio of N and P-Channel Small Signal MOSFETs, designed to meet and exceed the highest quality requirements in industry-standard packages. This component is particularly suited for automotive and industrial applications due to its high reliability and manufacturing capacity.

Key Specifications

Parameter Symbol Conditions Unit Min. Typ. Max.
Drain-source breakdown voltage V(BR)DSS V GS = 0 V, I D = 250 µA V 100 - -
Gate threshold voltage V GS(th) V DS = V GS, I D = 13 µA V 0.8 1.4 1.8
Drain-source on-state resistance R DS(on) V GS = 10 V, I D = 0.19 A Ω - 2.4 6
Drain-source on-state resistance R DS(on) V GS = 4.5 V, I D = 0.15 A Ω - 2.7 10
Maximum drain current I D - A - - 0.19
Maximum drain-source voltage V DS - V - - 100
Operating temperature range T A - °C -55 - 150
Package type - - - SOT-23 - -

Key Features

  • Enhancement mode
  • Logic level
  • Avalanche rated
  • Fast switching
  • Dv/dt rated
  • Pb-free lead-plating
  • RoHS compliant, halogen-free
  • Qualified according to automotive standards
  • PPAP capable
  • Low R DS(on) for higher efficiency and extended battery life
  • Small packages to save PCB space
  • Best-in-class quality and reliability

Applications

  • LED lighting
  • Advanced Driver Assistance Systems (ADAS)
  • Body control units
  • Switch Mode Power Supplies (SMPS)
  • Motor control

Q & A

  1. What is the maximum drain-source voltage of the BSS123NH6327XTSA1?

    The maximum drain-source voltage is 100 V.

  2. What is the typical drain-source on-state resistance at V GS = 10 V?

    The typical drain-source on-state resistance at V GS = 10 V is 2.4 Ω.

  3. Is the BSS123NH6327XTSA1 RoHS compliant?
  4. What is the operating temperature range of the BSS123NH6327XTSA1?

    The operating temperature range is from -55°C to 150°C.

  5. What package type does the BSS123NH6327XTSA1 use?

    The BSS123NH6327XTSA1 uses the SOT-23 package type.

  6. What are some potential applications of the BSS123NH6327XTSA1?

    Potential applications include LED lighting, ADAS, body control units, SMPS, and motor control.

  7. Is the BSS123NH6327XTSA1 qualified according to automotive standards?
  8. What is the maximum drain current of the BSS123NH6327XTSA1?

    The maximum drain current is 0.19 A.

  9. Does the BSS123NH6327XTSA1 have Pb-free lead-plating?
  10. What is the gate threshold voltage range of the BSS123NH6327XTSA1?

    The gate threshold voltage range is from 0.8 V to 1.8 V.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:190mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:6Ohm @ 190mA, 10V
Vgs(th) (Max) @ Id:1.8V @ 13µA
Gate Charge (Qg) (Max) @ Vgs:0.9 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:20.9 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):500mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT23
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.48
2,014

Please send RFQ , we will respond immediately.

Same Series
BSS123NH6433XTMA1
BSS123NH6433XTMA1
MOSFET N-CH 100V 190MA SOT23-3

Related Product By Categories

NTNS3193NZT5G
NTNS3193NZT5G
onsemi
MOSFET N-CH 20V 224MA 3XLLGA
STD80N10F7
STD80N10F7
STMicroelectronics
MOSFET N-CH 100V 70A DPAK
STP5NK60Z
STP5NK60Z
STMicroelectronics
MOSFET N-CH 600V 5A TO220AB
STF4N80K5
STF4N80K5
STMicroelectronics
MOSFET N-CH 800V 3A TO220FP
BSS138PW,115
BSS138PW,115
Nexperia USA Inc.
MOSFET N-CH 60V 320MA SOT323
FQA70N10
FQA70N10
onsemi
MOSFET N-CH 100V 70A TO3PN
FDBL86063-F085
FDBL86063-F085
onsemi
MOSFET N-CH 100V 240A 8HPSOF
NTMFS6H818NT1G
NTMFS6H818NT1G
onsemi
MOSFET N-CH 80V 20A/123A 5DFN
STP11NK40Z
STP11NK40Z
STMicroelectronics
MOSFET N-CH 400V 9A TO220AB
BSS138K
BSS138K
onsemi
MOSFET N-CH 50V 220MA SOT23-3
PMPB15XP
PMPB15XP
Nexperia USA Inc.
PMPB15XP - 12 V, SINGLE P-CHANNE
FDMS86101E
FDMS86101E
onsemi
MOSFET N-CH 100V 12.4A/60A 8PQFN

Related Product By Brand

BAT5404E6327HTSA1
BAT5404E6327HTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 30V SOT23
BAS40-06WH6327
BAS40-06WH6327
Infineon Technologies
RECTIFIER DIODE, SCHOTTKY
BAS 70-04 B5003
BAS 70-04 B5003
Infineon Technologies
DIODE ARRAY SCHOTTKY 70V SOT23
BAS7004WE6327HTSA1
BAS7004WE6327HTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 70V SOT323
BCP53-10E6327
BCP53-10E6327
Infineon Technologies
SMALL SIGNAL BIPOLAR TRANSISTOR
BC856BE6327
BC856BE6327
Infineon Technologies
BIPOLAR GEN PURPOSE TRANSISTOR
BC 807-25 B5003
BC 807-25 B5003
Infineon Technologies
TRANS PNP 45V 0.5A SOT23
BC 847C B5003
BC 847C B5003
Infineon Technologies
TRANS NPN 45V 0.1A SOT23
BCP5416E6433HTMA1
BCP5416E6433HTMA1
Infineon Technologies
TRANS NPN 45V 1A SOT223-4
BSS138W E6433
BSS138W E6433
Infineon Technologies
MOSFET N-CH 60V 280MA SOT323-3
BSS138W L6327
BSS138W L6327
Infineon Technologies
MOSFET N-CH 60V 280MA SOT323-3
BTN8962TAAUMA1
BTN8962TAAUMA1
Infineon Technologies
IC MOTOR DRIVER PAR TO263-7