IRFZ44NPBF
  • Share:

Infineon Technologies IRFZ44NPBF

Manufacturer No:
IRFZ44NPBF
Manufacturer:
Infineon Technologies
Package:
Tube
Description:
MOSFET N-CH 55V 49A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The IRFZ44NPBF is a 55 V single N-channel power MOSFET produced by Infineon Technologies. It is part of the IR MOSFET family, which utilizes proven silicon processes to offer a wide range of devices for various applications. This MOSFET is packaged in a TO-220AB package, making it suitable for through-hole mounting. It is designed for low-frequency applications and is known for its high current rating and low on-state resistance.

Key Specifications

ParameterValueUnit
Maximum Drain-Source Voltage (Vds)55V
Maximum Drain Current (Id)49A
Maximum Gate-Source Voltage (Vgs)±20V
Maximum Gate-Threshold Voltage (Vgs(th))4V
Maximum Junction Temperature (Tj)175°C
Maximum Power Dissipation (Pd)94W
On-State Resistance (Rds(on))0.0175Ω
Total Gate Charge (Qg)63nC
Rise Time (tr)60nS
Output Capacitance (Coss)360pF
PackageTO-220AB

Key Features

  • Planar cell structure for wide Safe Operating Area (SOA)
  • Optimized for broadest availability from distribution partners
  • Product qualification according to JEDEC standard
  • Silicon optimized for applications switching below 100 kHz
  • Industry standard through-hole power package
  • High-current rating and low on-state resistance
  • Increased ruggedness and high performance in low frequency applications
  • Standard pin-out allows for drop-in replacement

Applications

The IRFZ44NPBF is suitable for a variety of applications, including:

  • DC motors
  • Inverters
  • Switch Mode Power Supplies (SMPS)
  • Lighting systems
  • Load switches
  • Battery-powered applications

Q & A

  1. What is the maximum drain-source voltage of the IRFZ44NPBF?
    The maximum drain-source voltage is 55 V.
  2. What is the maximum drain current of the IRFZ44NPBF?
    The maximum drain current is 49 A.
  3. What is the package type of the IRFZ44NPBF?
    The package type is TO-220AB.
  4. What is the on-state resistance of the IRFZ44NPBF?
    The on-state resistance is 0.0175 Ω.
  5. What are the typical applications of the IRFZ44NPBF?
    Typical applications include DC motors, inverters, SMPS, lighting systems, load switches, and battery-powered applications.
  6. What is the maximum junction temperature of the IRFZ44NPBF?
    The maximum junction temperature is 175 °C.
  7. Is the IRFZ44NPBF fully avalanche rated?
    Yes, the IRFZ44NPBF is fully avalanche rated.
  8. What is the total gate charge of the IRFZ44NPBF?
    The total gate charge is 63 nC.
  9. Is the IRFZ44NPBF lead-free?
    Yes, the IRFZ44NPBF is lead-free.
  10. What is the rise time of the IRFZ44NPBF?
    The rise time is 60 nS.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:49A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:17.5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:63 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1470 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):94W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

$1.53
343

Please send RFQ , we will respond immediately.

Similar Products

Part Number IRFZ44NPBF IRFZ46NPBF IRFZ44ZPBF IRFZ48NPBF IRFZ44VPBF IRFZ44SPBF IRFZ44PBF IRFZ44RPBF IRFZ44NSPBF IRFZ24NPBF IRFZ34NPBF IRFZ44EPBF IRFZ44NLPBF
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Vishay Siliconix Vishay Siliconix Vishay Siliconix Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active Active Active Active Active Active Discontinued at Digi-Key Active Active Active Not For New Designs
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V 55 V 55 V 55 V 60 V 60 V 60 V 60 V 55 V 55 V 55 V 60 V 55 V
Current - Continuous Drain (Id) @ 25°C 49A (Tc) 53A (Tc) 51A (Tc) 64A (Tc) 55A (Tc) 50A (Tc) 50A (Tc) 50A (Tc) 49A (Tc) 17A (Tc) 29A (Tc) 48A (Tc) 49A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 17.5mOhm @ 25A, 10V 16.5mOhm @ 28A, 10V 13.9mOhm @ 31A, 10V 14mOhm @ 32A, 10V 16.5mOhm @ 31A, 10V 28mOhm @ 31A, 10V 28mOhm @ 31A, 10V 28mOhm @ 31A, 10V 17.5mOhm @ 25A, 10V 70mOhm @ 10A, 10V 40mOhm @ 16A, 10V 23mOhm @ 29A, 10V 17.5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 63 nC @ 10 V 72 nC @ 10 V 43 nC @ 10 V 81 nC @ 10 V 67 nC @ 10 V 67 nC @ 10 V 67 nC @ 10 V 67 nC @ 10 V 63 nC @ 10 V 20 nC @ 10 V 34 nC @ 10 V 60 nC @ 10 V 63 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1470 pF @ 25 V 1696 pF @ 25 V 1420 pF @ 25 V 1970 pF @ 25 V 1812 pF @ 25 V 1900 pF @ 25 V 1900 pF @ 25 V 1900 pF @ 25 V 1470 pF @ 25 V 370 pF @ 25 V 700 pF @ 25 V 1360 pF @ 25 V 1470 pF @ 25 V
FET Feature - - - - - - - - - - - - -
Power Dissipation (Max) 94W (Tc) 107W (Tc) 80W (Tc) 130W (Tc) 115W (Tc) 3.7W (Ta), 150W (Tc) 150W (Tc) 150W (Tc) 3.8W (Ta), 94W (Tc) 45W (Tc) 68W (Tc) 110W (Tc) 3.8W (Ta), 94W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Surface Mount Through Hole Through Hole Surface Mount Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB D²PAK (TO-263) TO-220AB TO-220AB D2PAK TO-220AB TO-220AB TO-220AB TO-262
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-220-3 TO-220-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-220-3 TO-220-3 TO-220-3 TO-262-3 Long Leads, I²Pak, TO-262AA

Related Product By Categories

NTMFS006N08MC
NTMFS006N08MC
onsemi
MOSFET N-CH 80V 9.3A/82A 8PQFN
CSD17484F4
CSD17484F4
Texas Instruments
MOSFET N-CH 30V 3A 3PICOSTAR
BSS138PW,115
BSS138PW,115
Nexperia USA Inc.
MOSFET N-CH 60V 320MA SOT323
IRLML0040TRPBF
IRLML0040TRPBF
Infineon Technologies
MOSFET N-CH 40V 3.6A SOT23
STF13N80K5
STF13N80K5
STMicroelectronics
MOSFET N-CH 800V 12A TO220FP
STD105N10F7AG
STD105N10F7AG
STMicroelectronics
MOSFET N-CH 100V 80A DPAK
BSS138K-7
BSS138K-7
Diodes Incorporated
MOSFET N-CH 50V SOT23 T&R 3K
NTMFS4C55NT1G
NTMFS4C55NT1G
onsemi
MOSFET N-CH 30V 78A SO8FL
2N7002BKM,315
2N7002BKM,315
Nexperia USA Inc.
MOSFET N-CH 60V 450MA DFN1006-3
NTD20N06LT4
NTD20N06LT4
onsemi
MOSFET N-CH 60V 20A DPAK
STF13NM60N-H
STF13NM60N-H
STMicroelectronics
MOSFET N-CH 600V 11A TO220FP
NTNS3A65PZT5GHW
NTNS3A65PZT5GHW
onsemi
MOSFET P-CH 20V 281MA SOT883

Related Product By Brand

BAV199E6327HTSA1
BAV199E6327HTSA1
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT23
BAS4002S-02LRHE6327
BAS4002S-02LRHE6327
Infineon Technologies
RECTIFIER DIODE, SCHOTTKY
BC858BE6327HTSA1
BC858BE6327HTSA1
Infineon Technologies
TRANS PNP 30V 0.1A SOT-23
BCX52E6327HTSA1
BCX52E6327HTSA1
Infineon Technologies
TRANS PNP 60V 1A SOT89
IPG20N04S4L08AATMA1
IPG20N04S4L08AATMA1
Infineon Technologies
MOSFET 2N-CH 40V 20A 8TDSON
BSS138WH6433XTMA1
BSS138WH6433XTMA1
Infineon Technologies
MOSFET N-CH 60V 280MA SOT323-3
BSC0702LSATMA1
BSC0702LSATMA1
Infineon Technologies
MOSFET N-CH 60V 100A SUPERSO8
BSS138W E6433
BSS138W E6433
Infineon Technologies
MOSFET N-CH 60V 280MA SOT323-3
IRS21867STRPBF
IRS21867STRPBF
Infineon Technologies
IC GATE DRVR HALF-BRIDGE 8SOIC
BTS6143DAUMA1
BTS6143DAUMA1
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 TO252-5
TLF35584QVVS1XUMA2
TLF35584QVVS1XUMA2
Infineon Technologies
IC REG AUTO APPL 1OUT VQFN-48-31
TLE73682EXUMA1
TLE73682EXUMA1
Infineon Technologies
IC REG AUTO APPL 3OUT DSO-36