IRLML5203TRPBF
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Infineon Technologies IRLML5203TRPBF

Manufacturer No:
IRLML5203TRPBF
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 30V 3A MICRO3/SOT23
Delivery:
Payment:
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iso45001
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Product Introduction

Overview

The IRLML5203TRPBF is a 30V single P-channel power MOSFET produced by Infineon Technologies. This device is part of the HEXFET Power MOSFET family and is known for its ultra-low on-resistance and advanced processing techniques. It is packaged in the Micro3™ (SOT-23) package, which is designed to be thermally enhanced and space-efficient, making it ideal for applications where board space is limited. The MOSFET is lead-free and RoHS compliant, ensuring environmental sustainability.

Key Specifications

ParameterMin.Typ.Max.UnitsConditions
Drain-Source Voltage (VDS)---30V-
Continuous Drain Current (ID) at TA = 25°C, VGS = -10V---3.0A-
Continuous Drain Current (ID) at TA = 70°C, VGS = -10V---2.4A-
Pulsed Drain Current (IDM)---24A-
Power Dissipation (PD) at TA = 25°C--1.25W-
Power Dissipation (PD) at TA = 70°C--0.80W-
Gate-to-Source Voltage (VGS)--±20V-
Junction and Storage Temperature Range (TJ, TSTG)-55-+150°C-
Maximum Junction-to-Ambient Thermal Resistance (RθJA)--100°C/W-
Static Drain-to-Source On-Resistance (RDS(on)) at VGS = -10V--98-

Key Features

  • Ultra Low On-Resistance: The IRLML5203TRPBF features extremely low on-resistance, making it highly efficient for various applications.
  • Thermally Enhanced Package: The Micro3™ (SOT-23) package is designed for optimal thermal performance and minimal board space usage.
  • Low Gate Charge: This MOSFET has a low gate charge, which enhances switching performance.
  • Lead-Free and RoHS Compliant: Ensures environmental sustainability and compliance with regulatory standards.
  • Surface Mount: Suitable for surface mount technology, facilitating easy integration into modern PCB designs.

Applications

The IRLML5203TRPBF is suitable for a variety of applications where space and efficiency are critical. These include:

  • Battery and Load Management: Ideal for managing power in battery-powered devices and load management systems.
  • Portable Electronics: Its low profile and thermal efficiency make it a good fit for portable electronics such as smartphones, tablets, and laptops.
  • PCMCIA Cards and Other Compact Devices: The small footprint of the Micro3™ package makes it perfect for use in PCMCIA cards and other compact electronic devices.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the IRLML5203TRPBF?
    The maximum drain-source voltage (VDS) is -30V.
  2. What is the continuous drain current (ID) at TA = 25°C and VGS = -10V?
    The continuous drain current (ID) at TA = 25°C and VGS = -10V is -3.0A.
  3. What is the power dissipation (PD) at TA = 25°C?
    The power dissipation (PD) at TA = 25°C is 1.25W.
  4. Is the IRLML5203TRPBF lead-free and RoHS compliant?
    Yes, the IRLML5203TRPBF is lead-free and RoHS compliant.
  5. What is the typical on-resistance (RDS(on)) at VGS = -10V?
    The typical on-resistance (RDS(on)) at VGS = -10V is 98mΩ.
  6. What is the junction and storage temperature range (TJ, TSTG)?
    The junction and storage temperature range (TJ, TSTG) is -55 to +150°C.
  7. What is the maximum junction-to-ambient thermal resistance (RθJA)?
    The maximum junction-to-ambient thermal resistance (RθJA) is 100°C/W.
  8. In what package is the IRLML5203TRPBF available?
    The IRLML5203TRPBF is available in the Micro3™ (SOT-23) package.
  9. What are some common applications of the IRLML5203TRPBF?
    Common applications include battery and load management, portable electronics, and PCMCIA cards.
  10. Is the IRLML5203TRPBF suitable for surface mount technology?
    Yes, the IRLML5203TRPBF is suitable for surface mount technology.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:98mOhm @ 3A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:14 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:510 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1.25W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:Micro3™/SOT-23
Package / Case:TO-236-3, SC-59, SOT-23-3
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Similar Products

Part Number IRLML5203TRPBF IRLML5103TRPBF
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 3A (Ta) 760mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 98mOhm @ 3A, 10V 600mOhm @ 600mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 14 nC @ 10 V 5.1 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 510 pF @ 25 V 75 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 1.25W (Ta) 540mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package Micro3™/SOT-23 Micro3™/SOT-23
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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