STD9N40M2
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STMicroelectronics STD9N40M2

Manufacturer No:
STD9N40M2
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 400V 6A DPAK
Delivery:
Payment:
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Product Introduction

Overview

The STD9N40M2 is an N-channel Power MOSFET developed by STMicroelectronics using the advanced MDmesh™ M2 technology. This device is characterized by its high performance and reliability, making it suitable for a variety of power management applications. The MOSFET features a strip layout and an improved vertical structure, which enhances its electrical characteristics and thermal performance.

Key Specifications

ParameterValue
Transistor PolarityN Channel
Drain-Source Voltage (Vds)400 V
Continuous Drain Current (Id)6 A
On-State Resistance (Rds(on))0.59 Ohm (typ.)
Power Dissipation (Pd)60 W (Tc)
Package TypeTO-252-3 (DPAK)

Key Features

  • High voltage rating of 400 V, making it suitable for high-power applications.
  • Low on-state resistance (Rds(on)) of 0.59 Ohm, which minimizes power losses.
  • Continuous drain current of 6 A, supporting high current requirements.
  • Advanced MDmesh™ M2 technology for improved electrical and thermal performance.
  • Compact TO-252-3 (DPAK) package for efficient space utilization.

Applications

The STD9N40M2 is versatile and can be used in various power management and control applications, including:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Industrial automation and control systems.
  • Automotive systems requiring high reliability and performance.
  • Consumer electronics needing efficient power management.

Q & A

  1. What is the voltage rating of the STD9N40M2 MOSFET?
    The STD9N40M2 has a drain-source voltage (Vds) rating of 400 V.
  2. What is the continuous drain current of the STD9N40M2?
    The continuous drain current (Id) is 6 A.
  3. What is the on-state resistance (Rds(on)) of the STD9N40M2?
    The on-state resistance (Rds(on)) is typically 0.59 Ohm.
  4. What package type does the STD9N40M2 come in?
    The STD9N40M2 comes in a TO-252-3 (DPAK) package.
  5. What technology is used in the STD9N40M2?
    The STD9N40M2 is developed using the MDmesh™ M2 technology...
  6. What are some common applications for the STD9N40M2?
    Common applications include power supplies, motor control systems, industrial automation, automotive systems, and consumer electronics.
  7. What is the power dissipation (Pd) of the STD9N40M2?
    The power dissipation (Pd) is 60 W (Tc)...
  8. Is the STD9N40M2 suitable for high-power applications?
    Yes, the STD9N40M2 is suitable for high-power applications due to its high voltage and current ratings.
  9. Where can I find the datasheet for the STD9N40M2?
    The datasheet for the STD9N40M2 can be found on the STMicroelectronics website, as well as on distributor websites like Digi-Key and Heisener.
  10. What are the benefits of using the MDmesh™ M2 technology in the STD9N40M2?
    The MDmesh™ M2 technology improves the electrical and thermal performance of the MOSFET, enhancing its overall efficiency and reliability...

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):400 V
Current - Continuous Drain (Id) @ 25°C:6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:800mOhm @ 3A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:8.8 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:270 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):60W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number STD9N40M2 STD9N60M2
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 400 V 600 V
Current - Continuous Drain (Id) @ 25°C 6A (Tc) 5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 800mOhm @ 3A, 10V 780mOhm @ 3A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.8 nC @ 10 V 10 nC @ 10 V
Vgs (Max) ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 270 pF @ 100 V 320 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 60W (Tc) 60W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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