NDUL03N150CG
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onsemi NDUL03N150CG

Manufacturer No:
NDUL03N150CG
Manufacturer:
onsemi
Package:
Tube
Description:
MOSFET N-CH 1500V 2.5A TO3P
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The NDUL03N150CG is a high-performance N-Channel Power MOSFET produced by onsemi. This device is designed for high-voltage applications, offering a combination of low on-resistance, high speed switching, and robust avalanche capability. The MOSFET is packaged in a TO-3P(L) through-hole configuration, making it suitable for a variety of power management and switching applications.

Key Specifications

ParameterSymbolValueUnit
Drain to Source VoltageVDSS1500V
Gate to Source VoltageVGSS±30V
Drain Current (DC)ID2.5A
Drain Current (Pulse)IDP5A
Power DissipationPD3 (Ta), 50 (Tc)W
Junction TemperatureTj-55 to +150°C
Storage TemperatureTstg-55 to +150°C
On-State ResistanceRDS(on)10.5 Ω @ 10VΩ
Gate Threshold VoltageVGS(th)2-4V

Key Features

  • Low On-Resistance: The NDUL03N150CG features a low on-state resistance of 10.5 Ω at VGS = 10V, which minimizes power losses during operation.
  • Ultra High Voltage: With a drain to source voltage rating of 1500V, this MOSFET is suitable for high-voltage applications.
  • High Speed Switching: The device offers fast switching times, including turn-on delay time of 15 ns and turn-off delay time of 140 ns.
  • 100% Avalanche Tested: Ensures robustness against avalanche conditions.
  • Pb-Free and RoHS Compliance: Environmentally friendly and compliant with international regulations.

Applications

  • Switch Mode Power Supply: Ideal for use in switch mode power supplies due to its high voltage and current handling capabilities.
  • AC Drive: Suitable for AC drive applications requiring high reliability and performance.

Q & A

  1. What is the maximum drain to source voltage of the NDUL03N150CG?
    The maximum drain to source voltage is 1500V.
  2. What is the maximum drain current for the NDUL03N150CG?
    The maximum DC drain current is 2.5A, and the maximum pulse drain current is 5A.
  3. What is the on-state resistance of the NDUL03N150CG?
    The on-state resistance is 10.5 Ω at VGS = 10V.
  4. What are the typical applications of the NDUL03N150CG?
    Typical applications include switch mode power supplies and AC drives.
  5. Is the NDUL03N150CG Pb-Free and RoHS compliant?
    Yes, the device is Pb-Free and RoHS compliant.
  6. What is the junction temperature range for the NDUL03N150CG?
    The junction temperature range is -55°C to +150°C.
  7. What is the storage temperature range for the NDUL03N150CG?
    The storage temperature range is -55°C to +150°C.
  8. What is the gate threshold voltage of the NDUL03N150CG?
    The gate threshold voltage is between 2V and 4V.
  9. Is the NDUL03N150CG 100% avalanche tested?
    Yes, the device is 100% avalanche tested.
  10. What is the package type of the NDUL03N150CG?
    The device is packaged in a TO-3P(L) through-hole configuration.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1500 V
Current - Continuous Drain (Id) @ 25°C:2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:10.5Ohm @ 1.25A, 10V
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:34 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:650 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):3W (Ta), 50W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-3P(L)
Package / Case:TO-3PL
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Similar Products

Part Number NDUL03N150CG NDUL09N150CG NDTL03N150CG
Manufacturer onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1500 V 1500 V 1500 V
Current - Continuous Drain (Id) @ 25°C 2.5A (Ta) 9A (Ta) 2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 10.5Ohm @ 1.25A, 10V 3Ohm @ 3A, 10V 10.5Ohm @ 1.25A, 10V
Vgs(th) (Max) @ Id - 4V @ 1mA -
Gate Charge (Qg) (Max) @ Vgs 34 nC @ 10 V 114 nC @ 10 V 34 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 650 pF @ 30 V 2025 pF @ 30 V 650 pF @ 30 V
FET Feature - - -
Power Dissipation (Max) 3W (Ta), 50W (Tc) 3W (Ta), 78W (Tc) 2.5W (Ta), 140W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-3P(L) TO-3PF-3 TO-3P(L)
Package / Case TO-3PL TO-3P-3 Full Pack TO-3PL

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