STL10N65M2
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STMicroelectronics STL10N65M2

Manufacturer No:
STL10N65M2
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 650V 4.5A POWERFLAT
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The STL10N65M2 is an N-channel Power MOSFET developed by STMicroelectronics using the advanced MDmesh M2 technology. This device is characterized by its strip layout and improved vertical structure, which enhance its performance and efficiency. The STL10N65M2 is designed to operate at high voltages and currents, making it suitable for a variety of power management and switching applications.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 650 V
RDS(on) (On-State Resistance) 0.85 Ω
ID (Drain Current) 4.5 A
Qg (Gate Charge) Extremely low -
COSS (Output Capacitance) Excellent profile -
Avalanche Testing 100% tested -
Gate Protection Zener-protected -

Key Features

  • MDmesh M2 technology for improved performance and efficiency.
  • Extremely low gate charge for reduced switching losses.
  • Excellent output capacitance (COSS) profile for better high-frequency performance.
  • 100% avalanche tested to ensure robustness against transient conditions.
  • Zener-protected gate to enhance reliability and protection against overvoltage.

Applications

The STL10N65M2 is suitable for various high-power applications, including:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • High-frequency switching circuits.
  • Aerospace and industrial power management systems.

Q & A

  1. What is the maximum drain-source voltage of the STL10N65M2?

    The maximum drain-source voltage (VDS) is 650 V.

  2. What is the typical on-state resistance of the STL10N65M2?

    The typical on-state resistance (RDS(on)) is 0.85 Ω.

  3. What is the maximum drain current of the STL10N65M2?

    The maximum drain current (ID) is 4.5 A.

  4. What technology is used in the STL10N65M2?

    The STL10N65M2 uses MDmesh M2 technology.

  5. Is the STL10N65M2 avalanche tested?

    Yes, the STL10N65M2 is 100% avalanche tested.

  6. What kind of gate protection does the STL10N65M2 have?

    The STL10N65M2 has Zener-protected gates.

  7. What are some typical applications of the STL10N65M2?

    Typical applications include power supplies, DC-DC converters, motor control systems, and high-frequency switching circuits.

  8. What is the significance of the low gate charge in the STL10N65M2?

    The low gate charge reduces switching losses, making the device more efficient in high-frequency applications.

  9. How does the excellent COSS profile benefit the STL10N65M2?

    The excellent COSS profile improves the device's performance in high-frequency switching applications.

  10. Is the STL10N65M2 suitable for automotive applications?

    While it is not specifically marked as automotive-grade, it can be used in various industrial and power management systems.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:10.3 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:315 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):48W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerFlat™ (5x6) HV
Package / Case:8-PowerVDFN
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Similar Products

Part Number STL10N65M2 STL11N65M2 STL12N65M2 STL16N65M2 STL18N65M2 STL13N65M2 STL10N60M2
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Obsolete Active Active Active Active Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V 650 V 650 V 650 V 650 V 600 V
Current - Continuous Drain (Id) @ 25°C 4.5A (Tc) 7A (Tc) 5A (Tc) 7.5A (Tc) 8A (Tc) 6.5A (Tc) 5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 1Ohm @ 2.5A, 10V 670mOhm @ 3.5A, 10V 750mOhm @ 3A, 10V 395mOhm @ 3.5A, 10V 365mOhm @ 4A, 10V 475mOhm @ 3A, 10V 660mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 10.3 nC @ 10 V 12.4 nC @ 10 V 12.5 nC @ 10 V 19.5 nC @ 10 V 21.5 nC @ 10 V 17 nC @ 10 V 13.5 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 315 pF @ 100 V 410 pF @ 100 V 410 pF @ 100 V 718 pF @ 100 V 764 pF @ 100 V 590 pF @ 100 V 400 pF @ 100 V
FET Feature - - - - - - -
Power Dissipation (Max) 48W (Tc) 85W (Tc) 48W (Tc) 56W (Tc) 57W (Tc) 52W (Tc) 48W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TA) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package PowerFlat™ (5x6) HV - PowerFlat™ (5x6) HV PowerFlat™ (5x6) HV PowerFlat™ (5x6) HV PowerFlat™ (5x6) HV PowerFlat™ (5x6) HV
Package / Case 8-PowerVDFN - 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN

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