Overview
The STL12N65M2 is an N-channel Power MOSFET developed by STMicroelectronics using the advanced MDmesh M2 technology. This device is designed to offer high efficiency, reliability, and robust protection features, making it suitable for demanding high-efficiency converters. The MOSFET features a strip layout and an improved vertical structure, which enhances its switching characteristics and reduces on-resistance.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| VDS (Drain-Source Voltage) | 650 | V |
| RDS(on) max. (On-Resistance) | 500 mΩ | mΩ |
| ID (Continuous Drain Current at TC = 25 °C) | 8 | A |
| IDM (Pulsed Drain Current) | 32 | A |
| VGS (Gate-Source Voltage) | ±25 | V |
| PTOT (Total Power Dissipation at TC = 25 °C) | 85 | W |
| Tstg (Storage Temperature Range) | -55 to 150 | °C |
| TJ (Operating Junction Temperature Range) | -55 to 150 | °C |
| RthJC (Thermal Resistance, Junction-to-Case) | 1.47 | °C/W |
| RthJA (Thermal Resistance, Junction-to-Ambient) | 50 | °C/W |
Key Features
- Extremely low gate charge
- Excellent output capacitance (Coss) profile
- 100% avalanche tested
- Zener-protected
- Low on-resistance and optimized switching characteristics
- High efficiency and reliability
Applications
The STL12N65M2 is primarily used in switching applications, including high-efficiency converters, power supplies, and other high-demand power management systems.
Q & A
- What is the maximum drain-source voltage (VDS) of the STL12N65M2?
The maximum drain-source voltage (VDS) is 650 V.
- What is the typical on-resistance (RDS(on)) of the STL12N65M2?
The typical on-resistance (RDS(on)) is 420 mΩ.
- What is the continuous drain current (ID) at TC = 25 °C?
The continuous drain current (ID) at TC = 25 °C is 8 A.
- What is the pulsed drain current (IDM) of the STL12N65M2?
The pulsed drain current (IDM) is 32 A.
- What is the total power dissipation (PTOT) at TC = 25 °C?
The total power dissipation (PTOT) at TC = 25 °C is 85 W.
- What is the storage temperature range (Tstg) of the STL12N65M2?
The storage temperature range (Tstg) is -55 to 150 °C.
- What is the thermal resistance, junction-to-case (RthJC), of the STL12N65M2?
The thermal resistance, junction-to-case (RthJC), is 1.47 °C/W.
- What are the key features of the STL12N65M2?
The key features include extremely low gate charge, excellent output capacitance profile, 100% avalanche tested, and Zener protection.
- In what types of applications is the STL12N65M2 typically used?
The STL12N65M2 is typically used in switching applications, including high-efficiency converters and power supplies.
- What technology is used in the development of the STL12N65M2?
The STL12N65M2 is developed using the MDmesh M2 technology.
