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STL16N65M2
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STMicroelectronics STL16N65M2

Manufacturer No:
STL16N65M2
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 650V 7.5A POWERFLAT
Delivery:
Payment:
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Product Introduction

Overview

The STL16N65M2 is an N-channel Power MOSFET developed by STMicroelectronics using the advanced MDmesh™ M2 technology. This device is designed to offer high performance and reliability in various power management applications. The MOSFET features a strip layout and an improved vertical structure, which enhances its electrical characteristics and thermal performance.

Key Specifications

Parameter Value
VDS (Drain-Source Voltage) 650 V
RDS(on) (On-Resistance) 0.325 Ω (typ.)
ID (Drain Current) 7.5 A
Ptot (Total Power Dissipation) Varies by package and conditions
TJ (Junction Temperature) -55°C to 150°C
Package PowerFLAT 5x6 HV

Key Features

  • MDmesh M2 Technology: Enhances electrical and thermal performance.
  • High Voltage Capability: 650 V drain-source voltage.
  • Low On-Resistance: 0.325 Ω typical on-resistance.
  • High Current Handling: 7.5 A continuous drain current.
  • Robust Package: PowerFLAT 5x6 HV package for improved thermal dissipation.

Applications

  • Power Supplies: Suitable for high-efficiency switching power supplies.
  • Motor Control: Used in motor drive applications requiring high voltage and current.
  • Industrial Automation: Ideal for various industrial automation and control systems.
  • Renewable Energy Systems: Can be used in solar and wind power systems for efficient power conversion.

Q & A

  1. What is the maximum drain-source voltage of the STL16N65M2?

    The maximum drain-source voltage is 650 V.

  2. What is the typical on-resistance of the STL16N65M2?

    The typical on-resistance is 0.325 Ω.

  3. What is the maximum continuous drain current of the STL16N65M2?

    The maximum continuous drain current is 7.5 A.

  4. What technology is used in the STL16N65M2?

    The STL16N65M2 uses MDmesh M2 technology.

  5. In what package is the STL16N65M2 available?

    The STL16N65M2 is available in the PowerFLAT 5x6 HV package.

  6. What are the typical applications of the STL16N65M2?

    Typical applications include power supplies, motor control, industrial automation, and renewable energy systems.

  7. What is the junction temperature range of the STL16N65M2?

    The junction temperature range is -55°C to 150°C.

  8. How does the MDmesh M2 technology benefit the STL16N65M2?

    The MDmesh M2 technology enhances the electrical and thermal performance of the MOSFET.

  9. Is the STL16N65M2 suitable for high-frequency applications?

    Yes, the STL16N65M2 is suitable for high-frequency applications due to its low on-resistance and high switching speed.

  10. Where can I find detailed specifications for the STL16N65M2?

    Detailed specifications can be found in the datasheet available on STMicroelectronics' official website and other authorized distributors.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:7.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:395mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:19.5 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:718 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):56W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerFlat™ (5x6) HV
Package / Case:8-PowerVDFN
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Similar Products

Part Number STL16N65M2 STL16N65M5 STL18N65M2 STL10N65M2 STL11N65M2 STL12N65M2 STL13N65M2 STL16N60M2
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Obsolete Active Active Obsolete Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V 650 V 650 V 650 V 650 V 650 V 600 V
Current - Continuous Drain (Id) @ 25°C 7.5A (Tc) 12A (Tc) 8A (Tc) 4.5A (Tc) 7A (Tc) 5A (Tc) 6.5A (Tc) 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 395mOhm @ 3.5A, 10V 299mOhm @ 6A, 10V 365mOhm @ 4A, 10V 1Ohm @ 2.5A, 10V 670mOhm @ 3.5A, 10V 750mOhm @ 3A, 10V 475mOhm @ 3A, 10V 355mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 5V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 19.5 nC @ 10 V 31 nC @ 10 V 21.5 nC @ 10 V 10.3 nC @ 10 V 12.4 nC @ 10 V 12.5 nC @ 10 V 17 nC @ 10 V 19 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 718 pF @ 100 V 1250 pF @ 100 V 764 pF @ 100 V 315 pF @ 100 V 410 pF @ 100 V 410 pF @ 100 V 590 pF @ 100 V 704 pF @ 100 V
FET Feature - - - - - - - -
Power Dissipation (Max) 56W (Tc) 3W (Ta), 90W (Tc) 57W (Tc) 48W (Tc) 85W (Tc) 48W (Tc) 52W (Tc) 52W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TA) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package PowerFlat™ (5x6) HV PowerFlat™ (8x8) HV PowerFlat™ (5x6) HV PowerFlat™ (5x6) HV - PowerFlat™ (5x6) HV PowerFlat™ (5x6) HV PowerFlat™ (5x6) HV
Package / Case 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN - 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN

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