STP13NK60ZFP
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STMicroelectronics STP13NK60ZFP

Manufacturer No:
STP13NK60ZFP
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 13A TO220FP
Delivery:
Payment:
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Product Introduction

Overview

The STP13NK60ZFP is a high-performance N-channel Power MOSFET produced by STMicroelectronics. It belongs to the SuperMESH™ series, which is optimized from ST's well-established strip-based PowerMESH™ layout. This MOSFET is designed for high-power applications requiring low on-state resistance and high switching speeds.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)600 V
RDS(on) (On-State Resistance)0.48 Ω (typical)
ID (Continuous Drain Current)13 A
PD (Power Dissipation)35 W
PackageTO-220FP
ESD ProtectionAvailable

Key Features

  • Low on-state resistance (RDS(on)) of 0.48 Ω (typical), reducing power losses.
  • High continuous drain current (ID) of 13 A, suitable for high-power applications.
  • High drain-source voltage (VDS) of 600 V, providing robustness against voltage spikes.
  • SuperMESH™ technology for improved switching performance and reduced thermal resistance.
  • TO-220FP package, offering good thermal dissipation and ease of mounting.

Applications

The STP13NK60ZFP is suitable for a variety of high-power applications, including:

  • Switch-mode power supplies (SMPS).
  • Motor control and drives.
  • Power factor correction (PFC) circuits.
  • High-frequency switching circuits.
  • Industrial and automotive power systems.

Q & A

  1. What is the maximum drain-source voltage of the STP13NK60ZFP?
    The maximum drain-source voltage (VDS) is 600 V.
  2. What is the typical on-state resistance of the STP13NK60ZFP?
    The typical on-state resistance (RDS(on)) is 0.48 Ω.
  3. What is the continuous drain current rating of the STP13NK60ZFP?
    The continuous drain current (ID) is 13 A.
  4. What package type is the STP13NK60ZFP available in?
    The STP13NK60ZFP is available in the TO-220FP package.
  5. Does the STP13NK60ZFP have ESD protection?
    Yes, the STP13NK60ZFP has ESD protection.
  6. What technology is used in the STP13NK60ZFP?
    The STP13NK60ZFP uses SuperMESH™ technology.
  7. What are some common applications for the STP13NK60ZFP?
    Common applications include switch-mode power supplies, motor control and drives, power factor correction circuits, high-frequency switching circuits, and industrial and automotive power systems.
  8. What is the power dissipation rating of the STP13NK60ZFP?
    The power dissipation rating is 35 W.
  9. Why is the SuperMESH™ technology important in the STP13NK60ZFP?
    The SuperMESH™ technology improves switching performance and reduces thermal resistance.
  10. Where can I find detailed specifications for the STP13NK60ZFP?
    Detailed specifications can be found on STMicroelectronics' official website and in the datasheet available for download.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:13A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:550mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id:4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:92 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:2030 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):35W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
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Similar Products

Part Number STP13NK60ZFP STP14NK60ZFP STP10NK60ZFP
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 13A (Tc) 13.5A (Tc) 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 550mOhm @ 4.5A, 10V 500mOhm @ 6A, 10V 750mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 100µA 4.5V @ 100µA 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 92 nC @ 10 V 75 nC @ 10 V 70 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 2030 pF @ 25 V 2220 pF @ 25 V 1370 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 35W (Tc) 40W (Tc) 35W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-220FP TO-220FP TO-220FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

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