STP10NK60ZFP
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STMicroelectronics STP10NK60ZFP

Manufacturer No:
STP10NK60ZFP
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 10A TO220FP
Delivery:
Payment:
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Product Introduction

Overview

The STP10NK60ZFP is a high-performance N-channel Power MOSFET developed by STMicroelectronics using their advanced SuperMESH™ technology. This device is designed for high-power switching applications and is available in the TO-220FP package. It features a drain-source voltage (VDS) of 600 V, a continuous drain current (ID) of 10 A at 25°C, and a low on-state resistance (RDS(on)) of less than 0.75 Ω. The STP10NK60ZFP is also equipped with built-in back-to-back Zener diodes to enhance ESD protection and safely absorb voltage transients.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDS) 600 V
Gate-Source Voltage (VGS) ±30 V
Continuous Drain Current (ID) at 25°C 10 A
Continuous Drain Current (ID) at 100°C 5.7 A
Pulsed Drain Current (IDM) 36 A
Total Power Dissipation (PTOT) at 25°C 35 W
On-State Resistance (RDS(on)) < 0.75 Ω
Thermal Resistance Junction-Case (Rthj-case) 0.8 °C/W
Operating Junction Temperature (Tj) -55 to 150 °C

Key Features

  • Extremely high dv/dt capability, making it suitable for demanding applications.
  • 100% avalanche tested to ensure reliability under extreme conditions.
  • Minimized gate charge for efficient switching.
  • Zener-protected gate to enhance ESD protection and absorb voltage transients.
  • Low on-state resistance (RDS(on)) of less than 0.75 Ω.
  • Available in TO-220FP package, which is compact and suitable for high-power applications.
  • Compliant with ECOPACK® environmental standards, ensuring minimal environmental impact.

Applications

  • Switching power supplies and DC-DC converters.
  • Motor control and drive systems.
  • High-frequency switching applications.
  • Power management in industrial and automotive systems.
  • General-purpose power switching where high reliability and efficiency are required.

Q & A

  1. What is the maximum drain-source voltage of the STP10NK60ZFP?

    The maximum drain-source voltage (VDS) is 600 V.

  2. What is the continuous drain current at 25°C for the STP10NK60ZFP?

    The continuous drain current (ID) at 25°C is 10 A.

  3. What is the maximum gate-source voltage for the STP10NK60ZFP?

    The maximum gate-source voltage (VGS) is ±30 V.

  4. What is the on-state resistance of the STP10NK60ZFP?

    The on-state resistance (RDS(on)) is less than 0.75 Ω.

  5. What type of package is the STP10NK60ZFP available in?

    The STP10NK60ZFP is available in the TO-220FP package.

  6. Does the STP10NK60ZFP have built-in ESD protection?

    Yes, it features built-in back-to-back Zener diodes for enhanced ESD protection.

  7. What is the maximum junction temperature for the STP10NK60ZFP?

    The maximum junction temperature (Tj) is 150°C.

  8. What is the total power dissipation at 25°C for the STP10NK60ZFP?

    The total power dissipation (PTOT) at 25°C is 35 W.

  9. Is the STP10NK60ZFP environmentally compliant?

    Yes, it is compliant with ECOPACK® environmental standards.

  10. What are some typical applications for the STP10NK60ZFP?

    Typical applications include switching power supplies, motor control, high-frequency switching, and power management in industrial and automotive systems.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:10A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:750mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id:4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:70 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1370 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):35W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
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Similar Products

Part Number STP10NK60ZFP STP14NK60ZFP STP10NK80ZFP STP13NK60ZFP STP10NK70ZFP
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 800 V 600 V 700 V
Current - Continuous Drain (Id) @ 25°C 10A (Tc) 13.5A (Tc) 9A (Tc) 13A (Tc) 8.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 750mOhm @ 4.5A, 10V 500mOhm @ 6A, 10V 900mOhm @ 4.5A, 10V 550mOhm @ 4.5A, 10V 850mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA 4.5V @ 100µA 4.5V @ 100µA 4.5V @ 100µA 4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 70 nC @ 10 V 75 nC @ 10 V 72 nC @ 10 V 92 nC @ 10 V 90 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1370 pF @ 25 V 2220 pF @ 25 V 2180 pF @ 25 V 2030 pF @ 25 V 2000 pF @ 25 V
FET Feature - - - - -
Power Dissipation (Max) 35W (Tc) 40W (Tc) 40W (Tc) 35W (Tc) 35W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

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