Overview
The NTMFS5C612NLT1G is a power MOSFET from onsemi, designed for high-performance applications requiring low on-resistance and high current handling. This N-channel MOSFET features a small footprint of 5x6 mm, making it ideal for compact designs. It is part of the DFN5 (SO-8FL) package family and is Pb-free and RoHS compliant.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 60 | V |
| Gate-to-Source Voltage | VGS | ±20 | V |
| Continuous Drain Current (TJ = 25°C) | ID | 238 | A |
| Continuous Drain Current (TJ = 100°C) | ID | 168 | A |
| Power Dissipation (TJ = 25°C) | PD | 170 | W |
| Power Dissipation (TJ = 100°C) | PD | 84 | W |
| Drain-to-Source On Resistance (VGS = 10 V, ID = 50 A) | RDS(on) | 1.27 - 1.5 | mΩ |
| Junction-to-Case Thermal Resistance | RJC | 0.9 | °C/W |
| Junction-to-Ambient Thermal Resistance | RJA | 39 | °C/W |
| Operating Junction and Storage Temperature | TJ, Tstg | -55 to +175 | °C |
Key Features
- Small Footprint: The MOSFET has a compact 5x6 mm footprint, ideal for space-constrained designs.
- Low RDS(on): With a low on-resistance of 1.27 - 1.5 mΩ at VGS = 10 V and ID = 50 A, it minimizes conduction losses.
- Low QG and Capacitance: Low total gate charge and capacitance reduce driver losses.
- Wettable Flank Option: The NTMFS5C612NWFT1G version offers wettable flanks for enhanced optical inspection.
- Pb-free and RoHS Compliant: Ensures environmental compliance and safety.
Applications
- Power Management: Suitable for high-power applications such as DC-DC converters, power supplies, and motor control.
- Automotive Systems: Can be used in automotive systems due to its robust performance and reliability.
- Industrial Control: Ideal for industrial control systems, including motor drives and power inverters.
- Consumer Electronics: Used in high-power consumer electronics such as gaming consoles and high-end computing systems.
Q & A
- What is the maximum drain-to-source voltage of the NTMFS5C612NLT1G?
The maximum drain-to-source voltage (VDSS) is 60 V.
- What is the continuous drain current at TJ = 25°C?
The continuous drain current (ID) at TJ = 25°C is 238 A.
- What is the on-resistance of the MOSFET at VGS = 10 V and ID = 50 A?
The on-resistance (RDS(on)) is 1.27 - 1.5 mΩ at VGS = 10 V and ID = 50 A.
- Is the NTMFS5C612NLT1G Pb-free and RoHS compliant?
- What is the junction-to-case thermal resistance?
The junction-to-case thermal resistance (RJC) is 0.9 °C/W.
- What are the operating junction and storage temperatures?
The operating junction and storage temperatures (TJ, Tstg) range from -55 to +175 °C.
- Does the NTMFS5C612NLT1G have a wettable flank option?
- What are some typical applications for this MOSFET?
Typical applications include power management, automotive systems, industrial control, and consumer electronics.
- What is the maximum power dissipation at TJ = 25°C?
The maximum power dissipation (PD) at TJ = 25°C is 170 W.
- What is the gate threshold voltage range?
The gate threshold voltage (VGS(TH)) range is 2.0 - 4.0 V.
