NTMFS5C682NLT1G
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onsemi NTMFS5C682NLT1G

Manufacturer No:
NTMFS5C682NLT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 25A 5DFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTMFS5C682NLT1G is a high-performance N-Channel power MOSFET manufactured by onsemi. This device is designed to provide high current handling and low on-resistance, making it suitable for a variety of power management and switching applications. The MOSFET features a compact 5-pin DFN package, which enhances thermal performance and reduces board space requirements.

Key Specifications

ParameterValueUnit
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage60 V
Id - Continuous Drain Current25 A
Rds(on) - On-Resistance21 mΩ
Junction-to-Case Thermal Resistance5.3 °C/W
Package Type5-Pin DFN

Key Features

  • High continuous drain current of 25 A, making it suitable for high-power applications.
  • Low on-resistance of 21 mΩ, which minimizes power losses and enhances efficiency.
  • Compact 5-pin DFN package for improved thermal performance and reduced board space.
  • High drain-source breakdown voltage of 60 V, providing robust protection against voltage spikes.
  • Low junction-to-case thermal resistance of 5.3 °C/W, ensuring reliable operation under high thermal conditions.

Applications

The NTMFS5C682NLT1G is versatile and can be used in a variety of applications, including:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Automotive systems, such as battery management and power distribution.
  • Industrial power management and control systems.
  • Consumer electronics requiring high-power switching.

Q & A

  1. What is the maximum continuous drain current of the NTMFS5C682NLT1G?
    The maximum continuous drain current is 25 A.
  2. What is the drain-source breakdown voltage of this MOSFET?
    The drain-source breakdown voltage is 60 V.
  3. What is the on-resistance of the NTMFS5C682NLT1G?
    The on-resistance is 21 mΩ.
  4. What type of package does the NTMFS5C682NLT1G come in?
    The NTMFS5C682NLT1G comes in a 5-pin DFN package.
  5. What is the junction-to-case thermal resistance of this MOSFET?
    The junction-to-case thermal resistance is 5.3 °C/W.
  6. What are some common applications for the NTMFS5C682NLT1G?
    Common applications include power supplies, motor control systems, automotive systems, industrial power management, and consumer electronics requiring high-power switching.
  7. Who is the manufacturer of the NTMFS5C682NLT1G?
    The manufacturer is onsemi.
  8. Where can I find detailed specifications for the NTMFS5C682NLT1G?
    Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Mouser and RS Components.
  9. What is the polarity of the NTMFS5C682NLT1G MOSFET?
    The polarity is N-Channel.
  10. How many channels does the NTMFS5C682NLT1G have?
    The NTMFS5C682NLT1G has 1 channel.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:25A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:21mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:2V @ 16µA
Gate Charge (Qg) (Max) @ Vgs:5 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:410 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):28W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Package / Case:8-PowerTDFN, 5 Leads
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In Stock

$2.83
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Similar Products

Part Number NTMFS5C682NLT1G NTMFS5C612NLT1G
Manufacturer onsemi onsemi
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 25A (Tc) 36A (Ta), 235A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 21mOhm @ 10A, 10V 1.5mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2V @ 16µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 5 nC @ 10 V 91 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 410 pF @ 25 V 6660 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 28W (Tc) 3.8W (Ta), 167W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads

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