Overview
The CSD17581Q5AT is a 30V, 2.9mΩ NexFET™ power MOSFET manufactured by Texas Instruments. Designed in a compact 5mm × 6mm SON package, this component is optimized for power conversion applications, offering significant efficiency improvements by reducing power losses. It targets applications in power management, such as DC-DC converters, motor drives, and other high-efficiency systems. Its low on-resistance and high current handling capabilities make it a competitive choice for modern electronic designs.
Key Specifications
| Parameter | Value | Unit | Notes |
|---|---|---|---|
| VDS (Drain-Source Voltage) | 30 | V | |
| RDS(on) (Drain-Source On-Resistance) | 2.9 | mΩ | VGS = 10V |
| Qg (Total Gate Charge) | 20 | nC | VGS = 4.5V |
| Qgd (Gate-Drain Charge) | 4 | nC | |
| VGS(th) (Threshold Voltage) | 1.3 | V | |
| ID (Continuous Drain Current) | 60 | A | Package-limited |
| IDM (Pulsed Drain Current) | 123 | A | TC = 25°C |
Key Features
- Low RDS(on) for high efficiency in power conversion applications.
- Compact SON package for space-constrained designs.
- High current handling capability, supporting up to 60A continuous drain current.
- Optimized for fast switching, reducing power losses in high-frequency applications.
- Robust thermal performance, ensuring reliability in demanding environments.
Applications
The CSD17581Q5AT is widely used in power management systems, including DC-DC converters, motor drives, and load switches. Its low on-resistance and high efficiency make it ideal for battery-powered devices, industrial automation, and automotive electronics. Additionally, its compact size and high performance enable its use in portable electronics and IoT devices where space and power efficiency are critical.
Q & A
1. What is the maximum drain-source voltage of the CSD17581Q5AT?
The maximum drain-source voltage is 30V.
2. What is the typical on-resistance of this MOSFET?
The typical on-resistance is 2.9mΩ at VGS = 10V.
3. What package does the CSD17581Q5AT use?
It uses a 5mm × 6mm SON package.
4. What is the total gate charge of this MOSFET?
The total gate charge is 20nC at VGS = 4.5V.
5. What is the continuous drain current rating?
The continuous drain current rating is 60A.
6. Is this MOSFET suitable for high-frequency switching applications?
Yes, its low gate charge and fast switching characteristics make it suitable for high-frequency applications.
7. What is the threshold voltage of the CSD17581Q5AT?
The threshold voltage is 1.3V.
8. Can this MOSFET be used in automotive applications?
Yes, its robust design and high efficiency make it suitable for automotive electronics.
9. What is the gate-drain charge of this MOSFET?
The gate-drain charge is 4nC.
10. What are the thermal characteristics of this MOSFET?
The MOSFET is designed for excellent thermal performance, ensuring reliability in high-power applications.
