STP80NF70
  • Share:

STMicroelectronics STP80NF70

Manufacturer No:
STP80NF70
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 68V 98A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STP80NF70 is an N-channel Power MOSFET from STMicroelectronics, realized with the unique STripFET™ process. This device is specifically designed to minimize input capacitance and gate charge, making it highly suitable for advanced high-efficiency switching applications. It features a drain-source voltage (VDS) of 68 V, a continuous drain current (ID) of 98 A, and a low on-state resistance (RDS(on)) of less than 0.0098 Ω.

Key Specifications

ParameterValueUnit
Drain-Source Voltage (VDS)68V
Continuous Drain Current (ID)98A
On-State Resistance (RDS(on))< 0.0098Ω
Gate-Source Voltage (VGS)±20V
Gate Threshold Voltage (VGS(th))2-4V
Thermal Resistance Junction-Ambient (Rthj-amb)62.5°C/W
Maximum Lead Temperature for Soldering300°C
PackageTO-220

Key Features

  • N-Channel Power MOSFET with low input capacitance and gate charge.
  • Exceptional dv/dt capability.
  • 100% avalanche tested.
  • Low on-state resistance of less than 0.0098 Ω.
  • Gate threshold voltage of 2-4 V.
  • Rise time and fall time of 60 ns and 75 ns, respectively.
  • Available in TO-220 package.

Applications

  • Switching high power devices.
  • Inverter circuits.
  • DC-DC converters.
  • Control speed of motors.
  • LED dimmers or flashers.
  • High-efficiency switching applications.

Q & A

  1. What is the drain-source voltage rating of the STP80NF70?
    The drain-source voltage rating is 68 V.
  2. What is the continuous drain current of the STP80NF70?
    The continuous drain current is 98 A.
  3. What is the on-state resistance of the STP80NF70?
    The on-state resistance is less than 0.0098 Ω.
  4. What is the gate threshold voltage range of the STP80NF70?
    The gate threshold voltage range is 2-4 V.
  5. What package type is the STP80NF70 available in?
    The STP80NF70 is available in the TO-220 package.
  6. What are some typical applications of the STP80NF70?
    Typical applications include switching high power devices, inverter circuits, DC-DC converters, motor speed control, and LED dimmers or flashers.
  7. Is the STP80NF70 suitable for high-speed switching applications?
    While it is suitable for high-efficiency switching, it may not be the best choice for high-speed switching due to its longer rise and fall times.
  8. Can the STP80NF70 be used in 3.3V or 5V logic level designs?
    No, it is not suitable for 3.3V or 5V logic level designs due to its gate threshold voltage requirements.
  9. What is the thermal resistance junction-ambient of the STP80NF70?
    The thermal resistance junction-ambient is 62.5 °C/W.
  10. Is the STP80NF70 RoHS compliant?
    Yes, the STP80NF70 is RoHS compliant with an Ecopack2 grade.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):68 V
Current - Continuous Drain (Id) @ 25°C:98A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:9.8mOhm @ 40A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:75 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2550 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):190W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

$2.95
191

Please send RFQ , we will respond immediately.

Similar Products

Part Number STP80NF70 STP80NF10
Manufacturer STMicroelectronics STMicroelectronics
Product Status Not For New Designs Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 68 V 100 V
Current - Continuous Drain (Id) @ 25°C 98A (Tc) 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 9.8mOhm @ 40A, 10V 15mOhm @ 40A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 75 nC @ 10 V 182 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2550 pF @ 25 V 5500 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 190W (Tc) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220 TO-220
Package / Case TO-220-3 TO-220-3

Related Product By Categories

FQD4P25TM-WS
FQD4P25TM-WS
onsemi
MOSFET P-CH 250V 3.1A DPAK
FCD380N60E
FCD380N60E
onsemi
MOSFET N-CH 600V 10.2A DPAK
CSD18531Q5AT
CSD18531Q5AT
Texas Instruments
MOSFET N-CH 60V 100A 8VSON
IRFP4468PBF
IRFP4468PBF
Infineon Technologies
MOSFET N-CH 100V 195A TO247AC
STD2NK100Z
STD2NK100Z
STMicroelectronics
MOSFET N-CH 1000V 1.85A DPAK
CSD18511Q5A
CSD18511Q5A
Texas Instruments
MOSFET N-CH 40V 159A 8VSON
STP11NK40Z
STP11NK40Z
STMicroelectronics
MOSFET N-CH 400V 9A TO220AB
STF18NM60N
STF18NM60N
STMicroelectronics
MOSFET N-CH 600V 13A TO220FP
STP14NK60ZFP
STP14NK60ZFP
STMicroelectronics
MOSFET N-CH 600V 13.5A TO220FP
BSN20BK215
BSN20BK215
Nexperia USA Inc.
SMALL SIGNAL N-CHANNEL MOSFET
NTMFS002P03P8ZT1G
NTMFS002P03P8ZT1G
onsemi
MOSFET, POWER -30V P-CHANNEL, SO
NTD3055-094-1
NTD3055-094-1
onsemi
MOSFET N-CH 60V 12A IPAK

Related Product By Brand

NUCLEO-F303RE
NUCLEO-F303RE
STMicroelectronics
NUCLEO-64 STM32F303RE EVAL BRD
ACST6-7SR
ACST6-7SR
STMicroelectronics
TRIAC SENS GATE 700V 6A I2PAK
STL76DN4LF7AG
STL76DN4LF7AG
STMicroelectronics
MOSFET 2N-CH 40V 40A PWRFLAT
STP24N60M2
STP24N60M2
STMicroelectronics
MOSFET N-CH 600V 18A TO220
TDA7718N
TDA7718N
STMicroelectronics
IC AUDIO SIGNAL PROCESSR 28TSSOP
E-TDA7560A
E-TDA7560A
STMicroelectronics
IC AMP AB QUAD 80W 27FLEXIWATT
L6201PS
L6201PS
STMicroelectronics
IC MOTOR DRIVER PAR 20POWERSO
VN5770AKP-E
VN5770AKP-E
STMicroelectronics
IC MOTOR DRIVER PAR 28SO
VNH7070ASTR
VNH7070ASTR
STMicroelectronics
IC MOTOR DRIVER 4V-28V 16SOIC
VB325SP13TR
VB325SP13TR
STMicroelectronics
IC PWR DRVR BIPOLAR 1:1 PWRSO10
ST1S50PUR
ST1S50PUR
STMicroelectronics
IC REG BUCK ADJ 4A 10VFDFPN
LNBH23LQTR
LNBH23LQTR
STMicroelectronics
IC REG CONV SAT TV 1OUT 32QFN