Overview
The STP80NF10 is a high-performance N-channel Power MOSFET from STMicroelectronics, designed using the unique STripFET II process. This MOSFET is optimized for low gate charge and minimal input capacitance, making it highly suitable for advanced high-efficiency isolated DC-DC converters and other applications requiring low gate drive requirements.
It features exceptional dv/dt capability, 100% avalanche testing, and application-oriented characterization, ensuring robust performance in various switching applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 100 | V |
| Gate-Source Voltage (VGS) | ±20 | V |
| Drain Current (ID) - Continuous at TC = 25°C | 80 | A |
| Drain Current (ID) - Continuous at TC = 100°C | 80 | A |
| Pulsed Drain Current (IDM) | 320 | A |
| Total Dissipation at TC = 25°C (PTOT) | 300 | W |
| Derating Factor | 2 | W/°C |
| Peak Diode Recovery Voltage Slope (dv/dt) | 7 | V/ns |
| Single Pulse Avalanche Energy (EAS) | 350 | mJ |
| Storage Temperature (Tstg) | -55 to 175 | °C |
| Maximum Junction Temperature (Tj) | 175 | °C |
| Thermal Resistance Junction-Case (Rthj-case) | 0.5 | °C/W |
| Thermal Resistance Junction-Ambient (Rthj-amb) | 62.5 | °C/W |
| Gate Threshold Voltage (VGS(th)) | 2 to 4 | V |
| Static Drain-Source On-Resistance (RDS(on)) | < 0.015 | Ω |
| Total Gate Charge (Qg) | 135 | nC |
| Rise Time (tr) | 80 | ns |
| Output Capacitance (Coss) | 700 | pF |
Key Features
- Exceptional dv/dt capability
- 100% avalanche tested
- Low gate charge and minimal input capacitance
- Suitable for advanced high-efficiency isolated DC-DC converters
- Application-oriented characterization
- High current capability up to 80 A
- Low on-state resistance (RDS(on)) of less than 0.015 Ω
- Available in TO-220 and D²PAK packages
Applications
- Switching applications in telecom and computer systems
- Advanced high-efficiency isolated DC-DC converters
- Any application requiring low gate charge drive
- Power management systems in industrial and automotive sectors
Q & A
- What is the maximum drain-source voltage (VDS) of the STP80NF10?
The maximum drain-source voltage (VDS) is 100 V.
- What is the maximum continuous drain current (ID) at 25°C?
The maximum continuous drain current (ID) at 25°C is 80 A.
- What is the typical on-state resistance (RDS(on)) of the STP80NF10?
The typical on-state resistance (RDS(on)) is less than 0.015 Ω.
- What is the total gate charge (Qg) of the STP80NF10?
The total gate charge (Qg) is 135 nC.
- What are the available packages for the STP80NF10?
The STP80NF10 is available in TO-220 and D²PAK packages.
- What is the maximum junction temperature (Tj) for the STP80NF10?
The maximum junction temperature (Tj) is 175°C.
- What is the peak diode recovery voltage slope (dv/dt) of the STP80NF10?
The peak diode recovery voltage slope (dv/dt) is 7 V/ns.
- What is the single pulse avalanche energy (EAS) of the STP80NF10?
The single pulse avalanche energy (EAS) is 350 mJ.
- What are some typical applications of the STP80NF10?
Typical applications include switching applications in telecom and computer systems, advanced high-efficiency isolated DC-DC converters, and any application requiring low gate charge drive.
- What process is used to manufacture the STP80NF10?
The STP80NF10 is manufactured using STMicroelectronics' unique STripFET II process.
