Overview
The STP60NF10 is a high-performance N-channel Power MOSFET from STMicroelectronics, designed using the unique STripFET™ process. This MOSFET is optimized for high-efficiency, high-frequency applications, particularly in isolated DC-DC converters for telecom and computer systems. It is characterized by its low input capacitance and gate charge, making it suitable for applications with low gate drive requirements.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-source voltage (VDS) | 100 | V |
| Gate-source voltage (VGS) | ±20 | V |
| Continuous drain current (ID) at TC = 25°C | 80 | A |
| Continuous drain current (ID) at TC = 100°C | 66 | A |
| Pulsed drain current (IDM) | 320 | A |
| Total dissipation at TC = 25°C | 300 | W |
| Derating factor | 2 | W/°C |
| Peak diode recovery voltage slope (dv/dt) | 16 | V/ns |
| Single pulse avalanche energy (EAS) | 485 | J |
| Storage temperature (Tstg) | -55 to 175 | °C |
| Thermal resistance junction-case (RthJC) | 0.5 | °C/W |
| Thermal resistance junction-ambient (RthJA) | 62.5 | °C/W |
| Maximum lead temperature for soldering purpose (Tl) | 300 | °C |
| Drain-source breakdown voltage (V(BR)DSS) | 100 | V |
| Gate threshold voltage (VGS(th)) | 2 to 4 | V |
| Static drain-source on resistance (RDS(on)) | 0.019 to 0.023 | Ω |
Key Features
- Exceptional dv/dt capability
- Low input capacitance and gate charge due to STripFET™ process
- Suitable for high-efficiency, high-frequency isolated DC-DC converters
- Low gate drive requirements
- 100% avalanche tested
- Available in TO-220, D²PAK, and I²PAK packages
- Lead-free second level interconnect (ECOPACK® packages)
Applications
- Switching applications in telecom and computer systems
- High-efficiency, high-frequency isolated DC-DC converters
- Any applications requiring low gate drive requirements
Q & A
- What is the maximum drain-source voltage (VDS) of the STP60NF10?
The maximum drain-source voltage (VDS) is 100 V.
- What is the continuous drain current (ID) at 25°C and 100°C?
The continuous drain current (ID) is 80 A at 25°C and 66 A at 100°C.
- What is the pulsed drain current (IDM) of the STP60NF10?
The pulsed drain current (IDM) is 320 A.
- What is the thermal resistance junction-case (RthJC) of the STP60NF10?
The thermal resistance junction-case (RthJC) is 0.5 °C/W.
- What are the typical applications of the STP60NF10?
The STP60NF10 is typically used in switching applications in telecom and computer systems, and in high-efficiency, high-frequency isolated DC-DC converters.
- What packages are available for the STP60NF10?
The STP60NF10 is available in TO-220, D²PAK, and I²PAK packages.
- What is the gate threshold voltage (VGS(th)) of the STP60NF10?
The gate threshold voltage (VGS(th)) is between 2 to 4 V.
- What is the static drain-source on resistance (RDS(on)) of the STP60NF10?
The static drain-source on resistance (RDS(on)) is between 0.019 to 0.023 Ω.
- Is the STP60NF10 100% avalanche tested?
- What is the maximum lead temperature for soldering purpose?
The maximum lead temperature for soldering purpose is 300 °C.
