STP40NF10
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STMicroelectronics STP40NF10

Manufacturer No:
STP40NF10
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 100V 50A TO220AB
Delivery:
Payment:
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Product Introduction

Overview

The STP40NF10 is a high-performance N-channel Power MOSFET developed by STMicroelectronics. It is part of the STripFET II family, which utilizes a unique 'single feature size' strip-based process. This technology results in extremely high packing density, low on-resistance, rugged avalanche characteristics, and improved manufacturing reproducibility. The device is packaged in a TO-220 format and is designed for various high-power applications requiring robust and reliable operation.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDS) 100 V
Gate-Source Voltage (VGS) ±20 V
Continuous Drain Current (ID) at TC = 25 °C 50 A
Continuous Drain Current (ID) at TC = 100 °C 35 A
Pulsed Drain Current (IDM) 200 A
Total Dissipation at TC = 25 °C 150 W
Maximum Junction Temperature (Tj) 175 °C
Static Drain-Source On-Resistance (RDS(on)) 0.025 - 0.028 Ω
Total Gate Charge (Qg) 46.5 - 62 nC
Rise Time (tr) 46 ns
Output Capacitance (Coss) 298 pF

Key Features

  • Exceptional dv/dt capability
  • Low gate charge
  • 100% avalanche tested
  • High packing density for low on-resistance
  • Rugged avalanche characteristics
  • Less critical alignment steps for improved manufacturing reproducibility
  • Available in ECOPACK® packages for environmental compliance

Applications

  • Switching applications
  • Motor drive
  • DC-DC converters
  • Power switches
  • Solenoid drives

Q & A

  1. What is the maximum drain-source voltage of the STP40NF10?

    The maximum drain-source voltage (VDS) is 100 V.

  2. What is the maximum continuous drain current at 25 °C?

    The maximum continuous drain current (ID) at 25 °C is 50 A.

  3. What is the maximum gate-source voltage?

    The maximum gate-source voltage (VGS) is ±20 V.

  4. What is the static drain-source on-resistance (RDS(on))?

    The static drain-source on-resistance (RDS(on)) is between 0.025 Ω and 0.028 Ω.

  5. What is the total gate charge (Qg)?

    The total gate charge (Qg) is between 46.5 nC and 62 nC.

  6. What are the typical applications of the STP40NF10?

    Typical applications include switching, motor drive, DC-DC converters, power switches, and solenoid drives.

  7. What is the maximum junction temperature (Tj)?

    The maximum junction temperature (Tj) is 175 °C.

  8. What is the package type of the STP40NF10?

    The package type is TO-220.

  9. Is the STP40NF10 100% avalanche tested?

    Yes, the STP40NF10 is 100% avalanche tested.

  10. What is the rise time (tr) of the STP40NF10?

    The rise time (tr) is 46 ns.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:50A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:28mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:62 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2180 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):150W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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Similar Products

Part Number STP40NF10 STP40NF10L STP40NF20 STP60NF10 STP40NF12 STP30NF10
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Last Time Buy Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 200 V 100 V 120 V 100 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc) 40A (Tc) 40A (Tc) 80A (Tc) 40A (Tc) 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 5V, 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 28mOhm @ 25A, 10V 33mOhm @ 20A, 10V 45mOhm @ 20A, 10V 23mOhm @ 40A, 10V 32mOhm @ 20A, 10V 45mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 2.5V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 62 nC @ 10 V 64 nC @ 5 V 75 nC @ 10 V 104 nC @ 10 V 80 nC @ 10 V 55 nC @ 10 V
Vgs (Max) ±20V ±17V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2180 pF @ 25 V 2300 pF @ 25 V 2500 pF @ 25 V 4270 pF @ 25 V 1880 pF @ 25 V 1180 pF @ 25 V
FET Feature - - - - - -
Power Dissipation (Max) 150W (Tc) 150W (Tc) 160W (Tc) 300W (Tc) 150W (Tc) 115W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) 175°C (TJ) -55°C ~ 150°C (TJ) - -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220 TO-220 TO-220 TO-220 TO-220 TO-220
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3

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