STP30NF10
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STMicroelectronics STP30NF10

Manufacturer No:
STP30NF10
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 100V 35A TO220AB
Delivery:
Payment:
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Product Introduction

Overview

The STP30NF10 is a high-performance N-channel Power MOSFET developed by STMicroelectronics. It is part of the STripFET II family, known for its exceptional dv/dt capability, low on-resistance, and rugged avalanche characteristics. This MOSFET is fabricated using STMicroelectronics' unique 'Single Feature Size™' strip-based process, which enhances packing density and manufacturing reproducibility. The STP30NF10 is available in D2PAK, TO-220, and TO-220FP packages, making it versatile for various applications.

Key Specifications

ParameterValueUnit
Drain-Source Voltage (VDS)100V
Gate-Source Voltage (VGS)±20V
Drain Current (ID) Continuous at TC = 25°C35A
Drain Current (ID) Continuous at TC = 100°C25A
Static Drain-Source On Resistance (RDS(on)) at VGS = 10V, ID = 15A0.038 - 0.045
Total Dissipation at TC = 25°C115W
Maximum Junction Temperature (Tj)175°C
Total Gate Charge (Qg)40nC
Rise Time (tr)40ns
Output Capacitance (Coss)180pF

Key Features

  • Exceptional dv/dt capability
  • 100% avalanche tested
  • Low gate charge
  • High packing density for low on-resistance
  • Rugged avalanche characteristics
  • Minimum lot-to-lot variations for robust device performance and reliable operation
  • Easy to drive due to low gate charge
  • Available in D2PAK, TO-220, and TO-220FP packages
  • Lead-free ECOPACK® packages for environmental compliance

Applications

  • High-efficiency DC-DC converters
  • Motor control
  • Isolated DC/DC converters
  • Switching applications

Q & A

  1. What is the maximum drain-source voltage of the STP30NF10 MOSFET?
    The maximum drain-source voltage (VDS) is 100 V.
  2. What is the maximum continuous drain current at 25°C?
    The maximum continuous drain current at 25°C is 35 A.
  3. What is the typical on-resistance of the STP30NF10?
    The typical static drain-source on resistance (RDS(on)) is 0.038 - 0.045 Ω at VGS = 10V and ID = 15A.
  4. What are the package options for the STP30NF10?
    The STP30NF10 is available in D2PAK, TO-220, and TO-220FP packages.
  5. What is the maximum junction temperature for the STP30NF10?
    The maximum junction temperature (Tj) is 175 °C.
  6. Is the STP30NF10 100% avalanche tested?
    Yes, the STP30NF10 is 100% avalanche tested.
  7. What is the total gate charge of the STP30NF10?
    The total gate charge (Qg) is 40 nC.
  8. What are some common applications of the STP30NF10?
    Common applications include high-efficiency DC-DC converters, motor control, and isolated DC/DC converters.
  9. Does the STP30NF10 come in lead-free packages?
    Yes, the STP30NF10 is available in lead-free ECOPACK® packages.
  10. What is the rise time of the STP30NF10?
    The rise time (tr) is 40 ns.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:35A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:45mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:55 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1180 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):115W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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Same Series
STB30NF10T4
STB30NF10T4
MOSFET N-CH 100V 35A D2PAK

Similar Products

Part Number STP30NF10 STP30NF20 STP40NF10 STP35NF10
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 200 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 35A (Tc) 30A (Tc) 50A (Tc) 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 45mOhm @ 15A, 10V 75mOhm @ 15A, 10V 28mOhm @ 25A, 10V 35mOhm @ 17.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 55 nC @ 10 V 38 nC @ 10 V 62 nC @ 10 V 55 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1180 pF @ 25 V 1597 pF @ 25 V 2180 pF @ 25 V 1550 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 115W (Tc) 125W (Tc) 150W (Tc) 115W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220 TO-220 TO-220 TO-220
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3

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