PMV50XP215
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NXP USA Inc. PMV50XP215

Manufacturer No:
PMV50XP215
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
P-CHANNEL MOSFET
Delivery:
Payment:
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Product Introduction

Overview

The PMV50XP215 is a P-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by NXP USA Inc. This component is part of NXP's extensive range of discrete semiconductor products, designed to provide high performance and reliability in various electronic applications. The PMV50XP215 is particularly noted for its low threshold voltage, low on-state resistance, and enhanced power dissipation capabilities, making it suitable for a wide range of uses.

Key Specifications

ParameterValue
Part NumberPMV50XP215
ManufacturerNXP USA Inc.
CategoryTransistors - FETs, MOSFETs - Single
DescriptionP-Channel MOSFET
PackageSurface Mount TO-236AB
Drain to Source Voltage (Vdss)20 V
Continuous Drain Current (Id) @ 25°C3.6 A
On-State Resistance (Rds On) (Max) @ Id, VgsNot specified in the source, but typically low for this type of MOSFET
Threshold Voltage (Vgs(th)) (Max) @ IdNot specified in the source, but typically low for this type of MOSFET
Power Dissipation (Max)490 mW (Ta), 4.63 W (Tc)
Operating TemperatureNot specified in the source, but typically -55°C to 150°C for similar MOSFETs

Key Features

  • Low Threshold Voltage: Ensures easy switching and low power consumption.
  • Low On-State Resistance: Minimizes energy losses and heat generation.
  • Enhanced Power Dissipation Capability: Allows for reliable operation in high-power applications.
  • Trench MOSFET Technology: Provides improved performance and efficiency.
  • Lead-Free and RoHS Compliant: Meets environmental and regulatory standards.

Applications

The PMV50XP215 P-channel MOSFET is versatile and can be used in a variety of applications, including:

  • Power Management: In DC-DC converters, power supplies, and voltage regulators.
  • Motor Control: For controlling and driving motors in automotive, industrial, and consumer electronics.
  • Switching Circuits: In high-frequency switching applications where low on-state resistance is crucial.
  • Automotive Systems: For use in automotive electronics such as lighting, infotainment, and body control modules.

Q & A

  1. What is the PMV50XP215?

    The PMV50XP215 is a P-channel MOSFET manufactured by NXP USA Inc.

  2. What is the maximum drain to source voltage (Vdss) of the PMV50XP215?

    The maximum drain to source voltage (Vdss) is 20 V.

  3. What is the continuous drain current (Id) at 25°C for the PMV50XP215?

    The continuous drain current (Id) at 25°C is 3.6 A.

  4. What package type does the PMV50XP215 come in?

    The PMV50XP215 comes in a surface mount TO-236AB package.

  5. Is the PMV50XP215 lead-free and RoHS compliant?

    Yes, the PMV50XP215 is lead-free and RoHS compliant.

  6. What are some common applications of the PMV50XP215?

    Common applications include power management, motor control, switching circuits, and automotive systems.

  7. What technology is used in the PMV50XP215?

    The PMV50XP215 uses trench MOSFET technology.

  8. What are the benefits of the low on-state resistance in the PMV50XP215?

    The low on-state resistance minimizes energy losses and heat generation, improving overall efficiency.

  9. How does the PMV50XP215 enhance power dissipation?

    The PMV50XP215 has an enhanced power dissipation capability, allowing for reliable operation in high-power applications.

  10. Where can I find detailed specifications and datasheets for the PMV50XP215?

    Detailed specifications and datasheets can be found on the NXP website, Digi-Key, or other authorized distributors.

Product Attributes

FET Type:- 
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:- 
Supplier Device Package:- 
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