2N7002T,215
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NXP USA Inc. 2N7002T,215

Manufacturer No:
2N7002T,215
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 300MA TO236AB
Delivery:
Payment:
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Product Introduction

Overview

The 2N7002 is a 60 V, 300 mA N-channel enhancement mode Field-Effect Transistor (FET) utilizing Trench MOSFET technology. It is packaged in a SOT23 plastic package, making it suitable for a wide range of applications requiring low power consumption and high efficiency. This component is part of Nexperia's product lineup, which has evolved from the discrete semiconductor products of NXP Semiconductors.

Key Specifications

ParameterValue
TypeN-channel enhancement mode FET
Voltage Rating (Vds)60 V
Current Rating (Id)300 mA
PackageSOT23
Orderable Part Numbers2N7002,215, 2N7002,235, 2N7002/HAMR

Key Features

  • Low on-state resistance (Rds(on))
  • High switching speed
  • Low gate charge
  • Compact SOT23 package
  • Enhancement mode operation

Applications

  • General-purpose switching
  • Power management
  • Motor control
  • Audio amplifiers
  • Automotive and industrial control systems

Q & A

  1. What is the voltage rating of the 2N7002? The voltage rating (Vds) of the 2N7002 is 60 V.
  2. What is the current rating of the 2N7002? The current rating (Id) of the 2N7002 is 300 mA.
  3. What package type is the 2N7002 available in? The 2N7002 is available in a SOT23 plastic package.
  4. What technology is used in the 2N7002? The 2N7002 uses Trench MOSFET technology.
  5. What are some common applications for the 2N7002? Common applications include general-purpose switching, power management, motor control, audio amplifiers, and automotive and industrial control systems.
  6. How do I order the 2N7002? You can order the 2N7002 from various distributors using the orderable part numbers 2N7002,215, 2N7002,235, or 2N7002/HAMR.
  7. What is the advantage of using Trench MOSFET technology in the 2N7002? Trench MOSFET technology provides low on-state resistance and high switching speed.
  8. Is the 2N7002 suitable for high-power applications? The 2N7002 is more suited for low to medium power applications due to its current rating of 300 mA.
  9. Can the 2N7002 be used in automotive applications? Yes, the 2N7002 can be used in automotive applications due to its robust specifications and compact package.
  10. What is the typical use case for the 2N7002 in power management? The 2N7002 is often used in power management for switching and control functions due to its low on-state resistance and high switching speed.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:40 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):830mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23 (TO-236AB)
Package / Case:TO-236-3, SC-59, SOT-23-3
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Similar Products

Part Number 2N7002T,215 2N7002,215 2N7002E,215 2N7002F,215 2N7002K,215 2N7002P,215
Manufacturer NXP USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. NXP USA Inc. Nexperia USA Inc.
Product Status Obsolete Active Obsolete Obsolete Obsolete Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 300mA (Ta) 300mA (Ta) 385mA (Ta) 475mA (Ta) 340mA (Ta) 360mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 10V
Rds On (Max) @ Id, Vgs 5Ohm @ 500mA, 10V 5Ohm @ 500mA, 10V 3Ohm @ 500mA, 10V 2Ohm @ 500mA, 10V 3.9Ohm @ 500mA, 10V 1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2V @ 1mA 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - - 0.69 nC @ 10 V 0.69 nC @ 10 V - 0.8 nC @ 4.5 V
Vgs (Max) ±20V ±30V ±30V ±30V ±15V ±20V
Input Capacitance (Ciss) (Max) @ Vds 40 pF @ 10 V 50 pF @ 10 V 50 pF @ 10 V 50 pF @ 10 V 40 pF @ 10 V 50 pF @ 10 V
FET Feature - - - - - -
Power Dissipation (Max) 830mW (Ta) 830mW (Ta) 830mW (Ta) 830mW (Ta) 830mW (Ta) 350mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23 (TO-236AB) TO-236AB TO-236AB TO-236AB SOT-23 (TO-236AB) TO-236AB
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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