PMR290UNE,115
  • Share:

NXP USA Inc. PMR290UNE,115

Manufacturer No:
PMR290UNE,115
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 20V 700MA SC75
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMR290UNE,115 is an N-Channel MOSFET produced by NXP USA Inc. This component is part of the TrenchMOS™ series, known for its high efficiency and reliability. It is designed for use in a variety of applications requiring low on-resistance and high current handling capabilities.

Key Specifications

ParameterValue
Drain to Source Voltage (Vdss)20 V
Current - Continuous Drain (Id) @ 25°C700 mA (Ta), 970 mA (Tc)
On-Resistance (Rds On) @ Id, Vgs350 mOhm @ 200mA, 4.5V
Gate Threshold Voltage (Vgs(th)) @ Id1.5 V @ 250 µA
Input Capacitance (Ciss) @ Vds34 pF @ 20 V
Gate Charge (Qg) @ Vgs0.72 nC @ 4.5 V
Power Dissipation (Max)250 mW (Ta), 530 mW (Tc)
Operating Temperature-55°C to 150°C (TJ)
Package / CaseSC-75, SOT-416
Mounting TypeSurface Mount

Key Features

  • TrenchMOS™ technology for low on-resistance and high efficiency.
  • High current handling capability with a continuous drain current of up to 700 mA.
  • Low gate threshold voltage for easy switching.
  • Compact SC-75 (SOT-416) package suitable for surface mount applications.
  • Broad operating temperature range from -55°C to 150°C.

Applications

The PMR290UNE,115 MOSFET is suitable for a wide range of applications, including:

  • Power management and switching circuits.
  • DC-DC converters and power supplies.
  • Motor control and drive systems.
  • Automotive and industrial electronics.
  • General-purpose switching and amplification.

Q & A

  1. What is the maximum drain to source voltage (Vdss) of the PMR290UNE,115?
    The maximum drain to source voltage (Vdss) is 20 V.
  2. What is the continuous drain current (Id) at 25°C?
    The continuous drain current (Id) at 25°C is 700 mA (Ta) and up to 970 mA (Tc).
  3. What is the on-resistance (Rds On) of the PMR290UNE,115?
    The on-resistance (Rds On) is 350 mOhm at 200 mA and 4.5 V Vgs.
  4. What is the gate threshold voltage (Vgs(th))?
    The gate threshold voltage (Vgs(th)) is 1.5 V at 250 µA.
  5. What is the input capacitance (Ciss) at 20 V?
    The input capacitance (Ciss) at 20 V is 34 pF.
  6. What is the gate charge (Qg) at 4.5 V?
    The gate charge (Qg) at 4.5 V is 0.72 nC.
  7. What is the maximum power dissipation?
    The maximum power dissipation is 250 mW (Ta) and 530 mW (Tc).
  8. What is the operating temperature range?
    The operating temperature range is from -55°C to 150°C (TJ).
  9. What package type is the PMR290UNE,115 available in?
    The PMR290UNE,115 is available in the SC-75 (SOT-416) package.
  10. Is the PMR290UNE,115 suitable for surface mount applications?
    Yes, the PMR290UNE,115 is designed for surface mount applications.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:700mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:380mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id:950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.68 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:83 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):250mW (Ta), 770mW (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SC-75
Package / Case:SC-75, SOT-416
0 Remaining View Similar

In Stock

-
568

Please send RFQ , we will respond immediately.

Same Series
RD15S10HE2X/AA
RD15S10HE2X/AA
CONN D-SUB RCPT 15POS CRIMP
DD15S20Z00/AA
DD15S20Z00/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26M20H00/AA
DD26M20H00/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD15S20J0S
DD15S20J0S
CONN D-SUB HD RCPT 15P SLDR CUP
CBC46W4S1S500S
CBC46W4S1S500S
CONN D-SUB RCPT 46POS CRIMP
DD26S2S0T0
DD26S2S0T0
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200V3X
DD26S200V3X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S10HT20/AA
DD26S10HT20/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD15S20JVLS/AA
DD15S20JVLS/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S10HE0/AA
DD26S10HE0/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD26S20WE30
DD26S20WE30
CONN D-SUB HD RCPT 26P SLDR CUP
CBC46W4S100T2S/AA
CBC46W4S100T2S/AA
CONN D-SUB RCPT 46POS CRIMP

Related Product By Categories

NCV8440ASTT1G
NCV8440ASTT1G
onsemi
MOSFET N-CH 59V 2.6A SOT223
NTH4LN019N65S3H
NTH4LN019N65S3H
onsemi
POWER MOSFET, N-CHANNEL, SUPERFE
CSD17484F4
CSD17484F4
Texas Instruments
MOSFET N-CH 30V 3A 3PICOSTAR
NTD2955T4G
NTD2955T4G
onsemi
MOSFET P-CH 60V 12A DPAK
FCD3400N80Z
FCD3400N80Z
onsemi
MOSFET N-CH 800V 2A DPAK
BUK7613-60E,118
BUK7613-60E,118
Nexperia USA Inc.
MOSFET N-CH 60V 58A D2PAK
BSN20BK215
BSN20BK215
Nexperia USA Inc.
SMALL SIGNAL N-CHANNEL MOSFET
STF9N60M2
STF9N60M2
STMicroelectronics
MOSFET N-CH 600V 5.5A TO220FP
STP80PF55
STP80PF55
STMicroelectronics
MOSFET P-CH 55V 80A TO220AB
PH1930AL,115
PH1930AL,115
Nexperia USA Inc.
MOSFET N-CH 30V 100A LFPAK56
NTD4909NT4G
NTD4909NT4G
onsemi
MOSFET N-CH 30V 8.8A/41A DPAK
FDMC8010ET30
FDMC8010ET30
onsemi
MOSFET N-CH 30V 30A/174A POWER33

Related Product By Brand

BZX84J-C27/L115
BZX84J-C27/L115
NXP USA Inc.
DIODE ZENER
PDTA144EU/ZL115
PDTA144EU/ZL115
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
PMBT3904/8,215
PMBT3904/8,215
NXP USA Inc.
TRANS PNP SWITCHING TO-236AB
MC9S08AC16CFGE
MC9S08AC16CFGE
NXP USA Inc.
IC MCU 8BIT 16KB FLASH 44LQFP
MKL04Z32VLF4
MKL04Z32VLF4
NXP USA Inc.
IC MCU 32BIT 32KB FLASH 48LQFP
MKE02Z64VQH4
MKE02Z64VQH4
NXP USA Inc.
IC MCU 32BIT 64KB FLASH 64QFP
SPC5777CDK3MMO3
SPC5777CDK3MMO3
NXP USA Inc.
IC MCU 32BIT 8MB FLASH 516MAPBGA
UJA1169ATK/X/FZ
UJA1169ATK/X/FZ
NXP USA Inc.
IC MINI-CAN SYSTEM BASIS CHIP
SCC2692AC1N40,602
SCC2692AC1N40,602
NXP USA Inc.
IC UART DUAL 40-DIP
74HCT4094D-Q100118
74HCT4094D-Q100118
NXP USA Inc.
SERIAL IN PARALLEL OUT
TEA18363T/2J
TEA18363T/2J
NXP USA Inc.
IC OFFLINE SWITCH FLYBACK 8SO
SA614AD,602
SA614AD,602
NXP USA Inc.
IC FM IF SYSTEM LOW PWR 16-SOIC