PMR290UNE,115
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NXP USA Inc. PMR290UNE,115

Manufacturer No:
PMR290UNE,115
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 20V 700MA SC75
Delivery:
Payment:
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iso45001
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Product Introduction

Overview

The PMR290UNE,115 is an N-Channel MOSFET produced by NXP USA Inc. This component is part of the TrenchMOS™ series, known for its high efficiency and reliability. It is designed for use in a variety of applications requiring low on-resistance and high current handling capabilities.

Key Specifications

ParameterValue
Drain to Source Voltage (Vdss)20 V
Current - Continuous Drain (Id) @ 25°C700 mA (Ta), 970 mA (Tc)
On-Resistance (Rds On) @ Id, Vgs350 mOhm @ 200mA, 4.5V
Gate Threshold Voltage (Vgs(th)) @ Id1.5 V @ 250 µA
Input Capacitance (Ciss) @ Vds34 pF @ 20 V
Gate Charge (Qg) @ Vgs0.72 nC @ 4.5 V
Power Dissipation (Max)250 mW (Ta), 530 mW (Tc)
Operating Temperature-55°C to 150°C (TJ)
Package / CaseSC-75, SOT-416
Mounting TypeSurface Mount

Key Features

  • TrenchMOS™ technology for low on-resistance and high efficiency.
  • High current handling capability with a continuous drain current of up to 700 mA.
  • Low gate threshold voltage for easy switching.
  • Compact SC-75 (SOT-416) package suitable for surface mount applications.
  • Broad operating temperature range from -55°C to 150°C.

Applications

The PMR290UNE,115 MOSFET is suitable for a wide range of applications, including:

  • Power management and switching circuits.
  • DC-DC converters and power supplies.
  • Motor control and drive systems.
  • Automotive and industrial electronics.
  • General-purpose switching and amplification.

Q & A

  1. What is the maximum drain to source voltage (Vdss) of the PMR290UNE,115?
    The maximum drain to source voltage (Vdss) is 20 V.
  2. What is the continuous drain current (Id) at 25°C?
    The continuous drain current (Id) at 25°C is 700 mA (Ta) and up to 970 mA (Tc).
  3. What is the on-resistance (Rds On) of the PMR290UNE,115?
    The on-resistance (Rds On) is 350 mOhm at 200 mA and 4.5 V Vgs.
  4. What is the gate threshold voltage (Vgs(th))?
    The gate threshold voltage (Vgs(th)) is 1.5 V at 250 µA.
  5. What is the input capacitance (Ciss) at 20 V?
    The input capacitance (Ciss) at 20 V is 34 pF.
  6. What is the gate charge (Qg) at 4.5 V?
    The gate charge (Qg) at 4.5 V is 0.72 nC.
  7. What is the maximum power dissipation?
    The maximum power dissipation is 250 mW (Ta) and 530 mW (Tc).
  8. What is the operating temperature range?
    The operating temperature range is from -55°C to 150°C (TJ).
  9. What package type is the PMR290UNE,115 available in?
    The PMR290UNE,115 is available in the SC-75 (SOT-416) package.
  10. Is the PMR290UNE,115 suitable for surface mount applications?
    Yes, the PMR290UNE,115 is designed for surface mount applications.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:700mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:380mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id:950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.68 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:83 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):250mW (Ta), 770mW (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SC-75
Package / Case:SC-75, SOT-416
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