PMZB290UN/FYL
  • Share:

NXP USA Inc. PMZB290UN/FYL

Manufacturer No:
PMZB290UN/FYL
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
PMZB290UN/FYL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMZB290UN/FYL is a single N-channel Trench MOSFET produced by NXP USA Inc., now part of Nexperia. Although this specific part is obsolete and no longer manufactured, it remains relevant for understanding the capabilities and features of similar MOSFETs. The PMZB290UN/FYL was known for its fast switching capabilities and low threshold voltage, making it suitable for various high-performance applications.

Key Specifications

ParameterValue
Vds (Drain-Source Voltage)20 V
Vgs (Gate-Source Voltage)±8 V
Id (Continuous Drain Current)Typically 2.5 A
Rds(on) (On-State Drain-Source Resistance)Typically 0.18 Ω
Vth (Threshold Voltage)Typically 0.7 to 1.5 V
Package TypeUltra thin package profile with 0.37 mm height
RoHS ComplianceYes

Key Features

  • Fast switching due to Trench MOSFET technology
  • Low threshold voltage for efficient operation
  • Ultra thin package profile with a height of 0.37 mm, suitable for space-constrained designs
  • ElectroStatic Discharge (ESD) protection

Applications

The PMZB290UN/FYL MOSFET is suitable for a variety of applications requiring high performance and low power consumption. These include but are not limited to:

  • Power management systems
  • DC-DC converters
  • Motor control circuits
  • Automotive and industrial electronics

Q & A

  1. What is the drain-source voltage (Vds) of the PMZB290UN/FYL MOSFET?
    The drain-source voltage (Vds) of the PMZB290UN/FYL MOSFET is 20 V.
  2. Is the PMZB290UN/FYL MOSFET still in production?
    No, the PMZB290UN/FYL MOSFET is obsolete and no longer manufactured.
  3. What is the typical on-state drain-source resistance (Rds(on)) of the PMZB290UN/FYL?
    The typical on-state drain-source resistance (Rds(on)) is 0.18 Ω.
  4. What is the threshold voltage (Vth) range of the PMZB290UN/FYL?
    The threshold voltage (Vth) range is typically 0.7 to 1.5 V.
  5. What are the key features of the PMZB290UN/FYL MOSFET?
    The key features include fast switching, low threshold voltage, ultra thin package profile, and ESD protection.
  6. What are some common applications for the PMZB290UN/FYL MOSFET?
    Common applications include power management systems, DC-DC converters, motor control circuits, and automotive and industrial electronics.
  7. Is the PMZB290UN/FYL RoHS compliant?
    Yes, the PMZB290UN/FYL is RoHS compliant.
  8. What is the package height of the PMZB290UN/FYL MOSFET?
    The package height of the PMZB290UN/FYL MOSFET is 0.37 mm.
  9. Why is the PMZB290UN/FYL MOSFET suitable for space-constrained designs?
    The PMZB290UN/FYL MOSFET is suitable for space-constrained designs due to its ultra thin package profile.
  10. What technology is used in the PMZB290UN/FYL MOSFET?
    The PMZB290UN/FYL MOSFET uses Trench MOSFET technology.

Product Attributes

FET Type:- 
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:- 
Supplier Device Package:- 
Package / Case:- 
0 Remaining View Similar

In Stock

-
383

Please send RFQ , we will respond immediately.

Same Series
DD15S20LV5S
DD15S20LV5S
CONN D-SUB HD RCPT 15P SLDR CUP
PCD50M98S0T2X
PCD50M98S0T2X
DSUB 50M STR CONTACT J/S TIN
DD26M20HE20/AA
DD26M20HE20/AA
CONN D-SUB HD PLUG 26P SLDR CUP
CBC47W1S100V50
CBC47W1S100V50
CONN D-SUB RCPT 47POS CRIMP
CBC46W4S10G00/AA
CBC46W4S10G00/AA
CONN D-SUB RCPT 46POS CRIMP
DD26S200V3X
DD26S200V3X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2F000/AA
DD26S2F000/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200E0/AA
DD26S200E0/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20W0X/AA
DD26S20W0X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S0T2X/AA
DD44S32S0T2X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S60V3X
DD44S32S60V3X
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20J00
DD26S20J00
CONN D-SUB HD RCPT 26P SLDR CUP

Related Product By Categories

NTLJF4156NT1G
NTLJF4156NT1G
onsemi
MOSFET N-CH 30V 2.5A 6WDFN
BSS84PH6327XTSA2
BSS84PH6327XTSA2
Infineon Technologies
MOSFET P-CH 60V 170MA SOT23-3
FQD19N10LTM
FQD19N10LTM
onsemi
MOSFET N-CH 100V 15.6A DPAK
FDMC86160ET100
FDMC86160ET100
onsemi
MOSFET N-CH 100V 9A/43A POWER33
FDMS86101A
FDMS86101A
onsemi
MOSFET N-CH 100V 13A/60A 8PQFN
STD4NK60ZT4
STD4NK60ZT4
STMicroelectronics
MOSFET N-CH 600V 4A DPAK
PSMN0R9-25YLDX
PSMN0R9-25YLDX
Nexperia USA Inc.
MOSFET N-CH 25V 300A LFPAK56
STP14NK60ZFP
STP14NK60ZFP
STMicroelectronics
MOSFET N-CH 600V 13.5A TO220FP
STW45N60DM2AG
STW45N60DM2AG
STMicroelectronics
MOSFET N-CH 600V 34A TO247
2N7002AQ-13
2N7002AQ-13
Diodes Incorporated
MOSFET N-CH 60V 180MA SOT23
AO3401AL_DELTA
AO3401AL_DELTA
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V SOT23
FDC658APG
FDC658APG
onsemi
MOSFET P-CH 30V 4A SSOT6

Related Product By Brand

PMEG2005EGW115
PMEG2005EGW115
NXP USA Inc.
NOW NEXPERIA PMEG2005EGW RECTIFI
BB178,335
BB178,335
NXP USA Inc.
DIODE VHF VAR CAP 32V SOD523
MK20FN1M0VLQ12R
MK20FN1M0VLQ12R
NXP USA Inc.
IC MCU 32BIT 1MB FLASH 144LQFP
P89LPC935FA,129
P89LPC935FA,129
NXP USA Inc.
IC MCU 8BIT 8KB FLASH 28PLCC
74HCT4053PW-Q100118
74HCT4053PW-Q100118
NXP USA Inc.
SINGLE-ENDED MUX,TSSOP16
NX3L2267GM,132
NX3L2267GM,132
NXP USA Inc.
IC ANALOG SWITCH SPDT 10XQFN
UJA1023T/2R04/C;51
UJA1023T/2R04/C;51
NXP USA Inc.
IC CAN/LIN I/O SLAVE 16-SOIC
PCA9575PW1,118
PCA9575PW1,118
NXP USA Inc.
IC I/O EXPANDER I2C 16B 24TSSOP
TDF8532HH/N2K
TDF8532HH/N2K
NXP USA Inc.
BAP3 DIE1
SPC5607BF1MLU6557
SPC5607BF1MLU6557
NXP USA Inc.
MICROCONTROLLER 32-BIT, POWER AR
BGU7224X
BGU7224X
NXP USA Inc.
IC RF AMP ISM 2.4GHZ 6HXSON
PCF7900VHN/C0L,118
PCF7900VHN/C0L,118
NXP USA Inc.
RF TX IC UHF 315/434MHZ 16VFQFN