PMZB290UN/FYL
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NXP USA Inc. PMZB290UN/FYL

Manufacturer No:
PMZB290UN/FYL
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
PMZB290UN/FYL
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The PMZB290UN/FYL is a single N-channel Trench MOSFET produced by NXP USA Inc., now part of Nexperia. Although this specific part is obsolete and no longer manufactured, it remains relevant for understanding the capabilities and features of similar MOSFETs. The PMZB290UN/FYL was known for its fast switching capabilities and low threshold voltage, making it suitable for various high-performance applications.

Key Specifications

ParameterValue
Vds (Drain-Source Voltage)20 V
Vgs (Gate-Source Voltage)±8 V
Id (Continuous Drain Current)Typically 2.5 A
Rds(on) (On-State Drain-Source Resistance)Typically 0.18 Ω
Vth (Threshold Voltage)Typically 0.7 to 1.5 V
Package TypeUltra thin package profile with 0.37 mm height
RoHS ComplianceYes

Key Features

  • Fast switching due to Trench MOSFET technology
  • Low threshold voltage for efficient operation
  • Ultra thin package profile with a height of 0.37 mm, suitable for space-constrained designs
  • ElectroStatic Discharge (ESD) protection

Applications

The PMZB290UN/FYL MOSFET is suitable for a variety of applications requiring high performance and low power consumption. These include but are not limited to:

  • Power management systems
  • DC-DC converters
  • Motor control circuits
  • Automotive and industrial electronics

Q & A

  1. What is the drain-source voltage (Vds) of the PMZB290UN/FYL MOSFET?
    The drain-source voltage (Vds) of the PMZB290UN/FYL MOSFET is 20 V.
  2. Is the PMZB290UN/FYL MOSFET still in production?
    No, the PMZB290UN/FYL MOSFET is obsolete and no longer manufactured.
  3. What is the typical on-state drain-source resistance (Rds(on)) of the PMZB290UN/FYL?
    The typical on-state drain-source resistance (Rds(on)) is 0.18 Ω.
  4. What is the threshold voltage (Vth) range of the PMZB290UN/FYL?
    The threshold voltage (Vth) range is typically 0.7 to 1.5 V.
  5. What are the key features of the PMZB290UN/FYL MOSFET?
    The key features include fast switching, low threshold voltage, ultra thin package profile, and ESD protection.
  6. What are some common applications for the PMZB290UN/FYL MOSFET?
    Common applications include power management systems, DC-DC converters, motor control circuits, and automotive and industrial electronics.
  7. Is the PMZB290UN/FYL RoHS compliant?
    Yes, the PMZB290UN/FYL is RoHS compliant.
  8. What is the package height of the PMZB290UN/FYL MOSFET?
    The package height of the PMZB290UN/FYL MOSFET is 0.37 mm.
  9. Why is the PMZB290UN/FYL MOSFET suitable for space-constrained designs?
    The PMZB290UN/FYL MOSFET is suitable for space-constrained designs due to its ultra thin package profile.
  10. What technology is used in the PMZB290UN/FYL MOSFET?
    The PMZB290UN/FYL MOSFET uses Trench MOSFET technology.

Product Attributes

FET Type:- 
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:- 
Supplier Device Package:- 
Package / Case:- 
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