PMZB290UN/FYL
  • Share:

NXP USA Inc. PMZB290UN/FYL

Manufacturer No:
PMZB290UN/FYL
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
PMZB290UN/FYL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMZB290UN/FYL is a single N-channel Trench MOSFET produced by NXP USA Inc., now part of Nexperia. Although this specific part is obsolete and no longer manufactured, it remains relevant for understanding the capabilities and features of similar MOSFETs. The PMZB290UN/FYL was known for its fast switching capabilities and low threshold voltage, making it suitable for various high-performance applications.

Key Specifications

ParameterValue
Vds (Drain-Source Voltage)20 V
Vgs (Gate-Source Voltage)±8 V
Id (Continuous Drain Current)Typically 2.5 A
Rds(on) (On-State Drain-Source Resistance)Typically 0.18 Ω
Vth (Threshold Voltage)Typically 0.7 to 1.5 V
Package TypeUltra thin package profile with 0.37 mm height
RoHS ComplianceYes

Key Features

  • Fast switching due to Trench MOSFET technology
  • Low threshold voltage for efficient operation
  • Ultra thin package profile with a height of 0.37 mm, suitable for space-constrained designs
  • ElectroStatic Discharge (ESD) protection

Applications

The PMZB290UN/FYL MOSFET is suitable for a variety of applications requiring high performance and low power consumption. These include but are not limited to:

  • Power management systems
  • DC-DC converters
  • Motor control circuits
  • Automotive and industrial electronics

Q & A

  1. What is the drain-source voltage (Vds) of the PMZB290UN/FYL MOSFET?
    The drain-source voltage (Vds) of the PMZB290UN/FYL MOSFET is 20 V.
  2. Is the PMZB290UN/FYL MOSFET still in production?
    No, the PMZB290UN/FYL MOSFET is obsolete and no longer manufactured.
  3. What is the typical on-state drain-source resistance (Rds(on)) of the PMZB290UN/FYL?
    The typical on-state drain-source resistance (Rds(on)) is 0.18 Ω.
  4. What is the threshold voltage (Vth) range of the PMZB290UN/FYL?
    The threshold voltage (Vth) range is typically 0.7 to 1.5 V.
  5. What are the key features of the PMZB290UN/FYL MOSFET?
    The key features include fast switching, low threshold voltage, ultra thin package profile, and ESD protection.
  6. What are some common applications for the PMZB290UN/FYL MOSFET?
    Common applications include power management systems, DC-DC converters, motor control circuits, and automotive and industrial electronics.
  7. Is the PMZB290UN/FYL RoHS compliant?
    Yes, the PMZB290UN/FYL is RoHS compliant.
  8. What is the package height of the PMZB290UN/FYL MOSFET?
    The package height of the PMZB290UN/FYL MOSFET is 0.37 mm.
  9. Why is the PMZB290UN/FYL MOSFET suitable for space-constrained designs?
    The PMZB290UN/FYL MOSFET is suitable for space-constrained designs due to its ultra thin package profile.
  10. What technology is used in the PMZB290UN/FYL MOSFET?
    The PMZB290UN/FYL MOSFET uses Trench MOSFET technology.

Product Attributes

FET Type:- 
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:- 
Supplier Device Package:- 
Package / Case:- 
0 Remaining View Similar

In Stock

-
383

Please send RFQ , we will respond immediately.

Same Series
DD15S2S0V50
DD15S2S0V50
CONN D-SUB HD RCPT 15P SLDR CUP
CBC46W4S100T2X
CBC46W4S100T2X
CONN D-SUB RCPT 46POS CRIMP
DD44S32S60T20
DD44S32S60T20
CONN D-SUB HD RCPT 44P VERT SLDR
CBC9W4S10HT2S/AA
CBC9W4S10HT2S/AA
CONN D-SUB RCPT 9POS CRIMP
DD15S20JV5S/AA
DD15S20JV5S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S200TX
DD26S200TX
CONN D-SUB HD RCPT 26P SLDR CUP
DD15S20WE3S/AA
DD15S20WE3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S10H00/AA
DD26S10H00/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD26S10HE20/AA
DD26S10HE20/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD26S2S0T20
DD26S2S0T20
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S10HE0/AA
DD26S10HE0/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD26S20WE30/AA
DD26S20WE30/AA
CONN D-SUB HD RCPT 26P SLDR CUP

Related Product By Categories

STD26P3LLH6
STD26P3LLH6
STMicroelectronics
MOSFET P-CH 30V 12A DPAK
FDB38N30U
FDB38N30U
onsemi
MOSFET N CH 300V 38A D2PAK
FDBL0150N80
FDBL0150N80
onsemi
MOSFET N-CH 80V 300A 8HPSOF
IRFP4468PBF
IRFP4468PBF
Infineon Technologies
MOSFET N-CH 100V 195A TO247AC
PSMN2R0-30YLE,115
PSMN2R0-30YLE,115
Nexperia USA Inc.
MOSFET N-CH 30V 100A LFPAK56
STQ1HNK60R-AP
STQ1HNK60R-AP
STMicroelectronics
MOSFET N-CH 600V 400MA TO92-3
NTHL050N65S3HF
NTHL050N65S3HF
onsemi
MOSFET N-CH 650V 58A TO247-3
STW15NB50
STW15NB50
STMicroelectronics
MOSFET N-CH 500V 14.6A TO247-3
NTD3055-094-1
NTD3055-094-1
onsemi
MOSFET N-CH 60V 12A IPAK
STF13NM60N-H
STF13NM60N-H
STMicroelectronics
MOSFET N-CH 600V 11A TO220FP
MCH3478-TL-W
MCH3478-TL-W
onsemi
MOSFET N-CH 30V 2A 3MCPH
PMZB290UN/FYL
PMZB290UN/FYL
NXP USA Inc.
PMZB290UN/FYL

Related Product By Brand

PMEG2005EGW115
PMEG2005EGW115
NXP USA Inc.
NOW NEXPERIA PMEG2005EGW RECTIFI
BF909A215
BF909A215
NXP USA Inc.
MOSFET N-CH SOT-143B
ADC1003S030TS/C1'1
ADC1003S030TS/C1'1
NXP USA Inc.
IC ADC 10BIT 28SSOP
MK10DX256VLK7R
MK10DX256VLK7R
NXP USA Inc.
IC MCU 32BIT 256KB FLASH 80FQFP
SPC5777CCK3MME3
SPC5777CCK3MME3
NXP USA Inc.
IC MCU 32BIT 8MB FLASH 416MAPBGA
MCIMX6U6AVM08ADR
MCIMX6U6AVM08ADR
NXP USA Inc.
I.MX6 ROM PERF ENHAN
SC18IS600IPW/S8HP
SC18IS600IPW/S8HP
NXP USA Inc.
IC I2C CONTROLLER SPI 16TSSOP
TJA1051T/3/1U
TJA1051T/3/1U
NXP USA Inc.
IC TRANSCEIVER HALF 1/1 8SO
SC16C652BIB48,128
SC16C652BIB48,128
NXP USA Inc.
IC ENCODER/DECODER IRDA 48LQFP
MMPF0200F6AEP
MMPF0200F6AEP
NXP USA Inc.
IC REG CONV I.MX6 11OUT 56HVQFN
MMPF0100F1AEPR2
MMPF0100F1AEPR2
NXP USA Inc.
IC REG CONV I.MX6 12OUT 56HVQFN
BGU7258X
BGU7258X
NXP USA Inc.
IC RF AMP ISM 5GHZ-6GHZ 6HXSON