PMZB290UN/FYL
  • Share:

NXP USA Inc. PMZB290UN/FYL

Manufacturer No:
PMZB290UN/FYL
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
PMZB290UN/FYL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMZB290UN/FYL is a single N-channel Trench MOSFET produced by NXP USA Inc., now part of Nexperia. Although this specific part is obsolete and no longer manufactured, it remains relevant for understanding the capabilities and features of similar MOSFETs. The PMZB290UN/FYL was known for its fast switching capabilities and low threshold voltage, making it suitable for various high-performance applications.

Key Specifications

ParameterValue
Vds (Drain-Source Voltage)20 V
Vgs (Gate-Source Voltage)±8 V
Id (Continuous Drain Current)Typically 2.5 A
Rds(on) (On-State Drain-Source Resistance)Typically 0.18 Ω
Vth (Threshold Voltage)Typically 0.7 to 1.5 V
Package TypeUltra thin package profile with 0.37 mm height
RoHS ComplianceYes

Key Features

  • Fast switching due to Trench MOSFET technology
  • Low threshold voltage for efficient operation
  • Ultra thin package profile with a height of 0.37 mm, suitable for space-constrained designs
  • ElectroStatic Discharge (ESD) protection

Applications

The PMZB290UN/FYL MOSFET is suitable for a variety of applications requiring high performance and low power consumption. These include but are not limited to:

  • Power management systems
  • DC-DC converters
  • Motor control circuits
  • Automotive and industrial electronics

Q & A

  1. What is the drain-source voltage (Vds) of the PMZB290UN/FYL MOSFET?
    The drain-source voltage (Vds) of the PMZB290UN/FYL MOSFET is 20 V.
  2. Is the PMZB290UN/FYL MOSFET still in production?
    No, the PMZB290UN/FYL MOSFET is obsolete and no longer manufactured.
  3. What is the typical on-state drain-source resistance (Rds(on)) of the PMZB290UN/FYL?
    The typical on-state drain-source resistance (Rds(on)) is 0.18 Ω.
  4. What is the threshold voltage (Vth) range of the PMZB290UN/FYL?
    The threshold voltage (Vth) range is typically 0.7 to 1.5 V.
  5. What are the key features of the PMZB290UN/FYL MOSFET?
    The key features include fast switching, low threshold voltage, ultra thin package profile, and ESD protection.
  6. What are some common applications for the PMZB290UN/FYL MOSFET?
    Common applications include power management systems, DC-DC converters, motor control circuits, and automotive and industrial electronics.
  7. Is the PMZB290UN/FYL RoHS compliant?
    Yes, the PMZB290UN/FYL is RoHS compliant.
  8. What is the package height of the PMZB290UN/FYL MOSFET?
    The package height of the PMZB290UN/FYL MOSFET is 0.37 mm.
  9. Why is the PMZB290UN/FYL MOSFET suitable for space-constrained designs?
    The PMZB290UN/FYL MOSFET is suitable for space-constrained designs due to its ultra thin package profile.
  10. What technology is used in the PMZB290UN/FYL MOSFET?
    The PMZB290UN/FYL MOSFET uses Trench MOSFET technology.

Product Attributes

FET Type:- 
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:- 
Supplier Device Package:- 
Package / Case:- 
0 Remaining View Similar

In Stock

-
383

Please send RFQ , we will respond immediately.

Same Series
DD62M3200V50/AA
DD62M3200V50/AA
CONN D-SUB HD PLUG 62P VERT SLDR
DD15S20LT2S
DD15S20LT2S
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20Z0X/AA
DD15S20Z0X/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S200V5S/AA
DD15S200V5S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20JT2S
DD15S20JT2S
CONN D-SUB HD RCPT 15P SLDR CUP
CBC46W4S1S500S
CBC46W4S1S500S
CONN D-SUB RCPT 46POS CRIMP
DD15S20WE3S/AA
DD15S20WE3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HE2S/AA
CBC13W3S10HE2S/AA
CONN D-SUB RCPT 13POS CRIMP
DD26S2S0T2X/AA
DD26S2S0T2X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32000X/AA
DD44S32000X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S2S0V5X/AA
DD26S2S0V5X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50V50
DD26S2S50V50
CONN D-SUB HD RCPT 26P SLDR CUP

Related Product By Categories

VN2222LL-G-P003
VN2222LL-G-P003
Microchip Technology
MOSFET N-CH 60V 230MA TO92-3
FDMC2523P
FDMC2523P
onsemi
MOSFET P-CH 150V 3A 8MLP
2N7002-TP
2N7002-TP
Micro Commercial Co
MOSFET N-CH 60V 115MA SOT23
NTR3C21NZT1G
NTR3C21NZT1G
onsemi
MOSFET N-CH 20V 3.6A SOT23-3
FDBL86063-F085
FDBL86063-F085
onsemi
MOSFET N-CH 100V 240A 8HPSOF
FDS4465
FDS4465
onsemi
MOSFET P-CH 20V 13.5A 8SOIC
STB80NF55-06T4
STB80NF55-06T4
STMicroelectronics
MOSFET N-CH 55V 80A D2PAK
STH315N10F7-6
STH315N10F7-6
STMicroelectronics
MOSFET N-CH 100V 180A H2PAK-6
PMCXB900UE147
PMCXB900UE147
NXP USA Inc.
SMALL SIGNAL FET
NTMFS002P03P8ZT1G
NTMFS002P03P8ZT1G
onsemi
MOSFET, POWER -30V P-CHANNEL, SO
NTTFS4939NTAG
NTTFS4939NTAG
onsemi
MOSFET N-CH 30V 8.9A/52A 8WDFN
FDMC8010ET30
FDMC8010ET30
onsemi
MOSFET N-CH 30V 30A/174A POWER33

Related Product By Brand

BZX84J-C27/L115
BZX84J-C27/L115
NXP USA Inc.
DIODE ZENER
BFG520,235
BFG520,235
NXP USA Inc.
RF TRANS NPN 15V 9GHZ SOT143B
BF908R,215
BF908R,215
NXP USA Inc.
MOSFET DUAL GATE 12V 40MA SOT143
BF1202WR,115
BF1202WR,115
NXP USA Inc.
MOSFET 2N-CH 10V 30MA SOT343R
PCF85063TP/1Z
PCF85063TP/1Z
NXP USA Inc.
IC RTC CLK/CALENDAR I2C 8-SON
ADC1003S030TS/C1'1
ADC1003S030TS/C1'1
NXP USA Inc.
IC ADC 10BIT 28SSOP
S9S12G48F0MLFR
S9S12G48F0MLFR
NXP USA Inc.
IC MCU 16BIT 48KB FLASH 48LQFP
74HCT4053PW-Q100118
74HCT4053PW-Q100118
NXP USA Inc.
SINGLE-ENDED MUX,TSSOP16
SC28L202A1DGG/G:11
SC28L202A1DGG/G:11
NXP USA Inc.
IC UART DUAL W/FIFO 56-TSSOP
74LV08D/C118
74LV08D/C118
NXP USA Inc.
AND GATE, LV/LV-A/LVX/H SERIES
BAS21SW115
BAS21SW115
NXP USA Inc.
NOW NEXPERIA BAS21SW - RECTIFIER
MMDS09254HT1
MMDS09254HT1
NXP USA Inc.
ADVANCED DOHERTY ALIGNMENT MODUL