Overview
The NVMFS6H852NLT1G is a power MOSFET from onsemi, designed for high-performance applications. This single N-channel MOSFET features a drain-to-source voltage (VDSS) of 80 V and a continuous drain current (ID) of up to 40 A at 25°C. It is packaged in a compact DFN5 (SO-8FL) case, making it ideal for space-constrained designs. The device is AEC-Q101 qualified and PPAP capable, ensuring reliability in automotive and other demanding environments.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 80 | V |
| Gate-to-Source Voltage | VGS | ±20 | V |
| Continuous Drain Current (TC = 25°C) | ID | 40 | A |
| Power Dissipation (TC = 25°C) | PD | 54 | W |
| Pulsed Drain Current (TA = 25°C, tp = 10 μs) | IDM | 200 | A |
| Operating Junction and Storage Temperature Range | TJ, Tstg | −55 to +175 | °C |
| Drain-to-Source On Resistance (RDS(on)) | RDS(on) | 11.8 - 14.2 | mΩ |
| Junction-to-Case Thermal Resistance | RθJC | 2.8 | °C/W |
| Junction-to-Ambient Thermal Resistance | RθJA | 42 | °C/W |
Key Features
- Small Footprint: The device is packaged in a compact 5x6 mm DFN5 (SO-8FL) case, ideal for space-constrained designs.
- Low RDS(on): Minimizes conduction losses with a drain-to-source on resistance of 11.8 - 14.2 mΩ.
- Low QG and Capacitance: Reduces driver losses due to low gate charge and capacitance.
- Wettable Flank Option: Available in a wettable flank version (NVMFS6H852NWF) for enhanced optical inspection.
- AEC-Q101 Qualified and PPAP Capable: Ensures reliability in automotive and other demanding environments.
- Pb-Free and RoHS Compliant: Meets environmental regulations.
Applications
The NVMFS6H852NLT1G is suitable for various high-power applications, including:
- Automotive systems: Due to its AEC-Q101 qualification, it is ideal for use in automotive power management and control systems.
- Power supplies: Its high current and voltage ratings make it suitable for high-power supply designs.
- Motor control: Used in motor drive applications requiring high efficiency and reliability.
- Network communications: Can be used in power management circuits for network communication equipment.
Q & A
- What is the maximum drain-to-source voltage of the NVMFS6H852NLT1G?
The maximum drain-to-source voltage (VDSS) is 80 V.
- What is the continuous drain current rating at 25°C?
The continuous drain current (ID) is up to 40 A at 25°C.
- What is the typical on-resistance of the MOSFET?
The typical drain-to-source on resistance (RDS(on)) is between 11.8 and 14.2 mΩ.
- Is the NVMFS6H852NLT1G AEC-Q101 qualified?
Yes, the device is AEC-Q101 qualified and PPAP capable.
- What is the junction-to-case thermal resistance?
The junction-to-case thermal resistance (RθJC) is 2.8 °C/W.
- Is the device Pb-Free and RoHS compliant?
Yes, the device is Pb-Free and RoHS compliant.
- What is the operating junction temperature range?
The operating junction temperature range is −55 to +175 °C.
- What is the maximum pulsed drain current?
The maximum pulsed drain current (IDM) is 200 A for a pulse duration of 10 μs.
- What are the key applications of the NVMFS6H852NLT1G?
Key applications include automotive systems, power supplies, motor control, and network communications.
- What package options are available for the NVMFS6H852NLT1G?
The device is available in DFN5 (SO-8FL) and DFNW5 (with wettable flanks) packages.
