Overview
The NVMFS6H852NT1G from onsemi is an 80V N-Channel Enhancement Mode MOSFET designed for high-performance applications. This device is characterized by its high continuous drain current and low drain-source resistance, making it suitable for various power management and control tasks.
Key Specifications
| Parameter | Value |
|---|---|
| Continuous Drain Current | 43 A |
| Drain-Source Resistance (Rds(on)) | 11.8 to 14.2 mΩ |
| Drain-Source Breakdown Voltage (Vds) | 80 V |
| Gate-Source Voltage (Vgs) | -20 to 20 V |
| Gate-Source Threshold Voltage (Vth) | 2 to 4 V |
| Maximum Operating Temperature | +175°C |
| Power Dissipation (Pd) | 54 W |
| Channel Mode | Enhancement |
| Qualification | AEC-Q101 |
| Package Type | SO-8FL |
Key Features
- High continuous drain current of 43 A, making it suitable for high-power applications.
- Low drain-source resistance (Rds(on)) of 11.8 to 14.2 mΩ, which minimizes power losses.
- Enhancement mode operation for efficient switching.
- AEC-Q101 qualified, ensuring reliability in automotive and other demanding environments.
- Compact SO-8FL package for space-efficient designs.
Applications
- Motor control applications: The high current and low resistance make it ideal for motor control systems.
- Power factor correction (PFC) applications: Suitable for PFC circuits due to its high voltage and current ratings.
- Automotive systems: AEC-Q101 qualification ensures its reliability in automotive applications.
- Power management systems: Used in various power management and control circuits requiring high efficiency and reliability.
Q & A
- What is the continuous drain current of the NVMFS6H852NT1G MOSFET?
The continuous drain current is 43 A.
- What is the drain-source resistance (Rds(on)) of the NVMFS6H852NT1G?
The drain-source resistance (Rds(on)) is between 11.8 and 14.2 mΩ.
- What is the maximum operating temperature of the NVMFS6H852NT1G?
The maximum operating temperature is +175°C.
- What is the gate-source threshold voltage (Vth) of the NVMFS6H852NT1G?
The gate-source threshold voltage (Vth) is between 2 and 4 V.
- Is the NVMFS6H852NT1G AEC-Q101 qualified?
Yes, the NVMFS6H852NT1G is AEC-Q101 qualified.
- What is the package type of the NVMFS6H852NT1G?
The package type is SO-8FL.
- What are some typical applications of the NVMFS6H852NT1G?
Typical applications include motor control, power factor correction, automotive systems, and power management systems.
- What is the power dissipation (Pd) of the NVMFS6H852NT1G?
The power dissipation (Pd) is 54 W.
- What is the channel mode of the NVMFS6H852NT1G?
The channel mode is enhancement.
- What is the drain-source breakdown voltage (Vds) of the NVMFS6H852NT1G?
The drain-source breakdown voltage (Vds) is 80 V.
