FDMS86101A
  • Share:

onsemi FDMS86101A

Manufacturer No:
FDMS86101A
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 13A/60A 8PQFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDMS86101A is an N-Channel MOSFET produced by onsemi, utilizing their advanced PowerTrench® process. This technology is specifically designed to minimize on-state resistance while maintaining superior switching performance. The device is suitable for a wide range of applications due to its general usage design.

Key Specifications

Parameter Value Unit
VDS (Drain to Source Voltage) 100 V
ID (Maximum Drain Current at TA) 13 A
ID (Maximum Drain Current at TC) 60 A
RDS(on) (Maximum On-State Resistance at VGS = 10 V, ID = 13 A) 8
RDS(on) (Maximum On-State Resistance at VGS = 6 V, ID = 9.5 A) 13.5
VGS(th) (Gate to Source Threshold Voltage) ±4 V
PD (Maximum Power Dissipation at TA) 2.5 W
PD (Maximum Power Dissipation at TC) 104 W
Package Type 8-PQFN (5x6)
MSL Type MSL1
RoHS Compliance Yes

Key Features

The FDMS86101A features several key advantages:

  • Advanced PowerTrench® Process: Minimizes on-state resistance and maintains superior switching performance.
  • Low On-State Resistance: RDS(on) of 8 mΩ at VGS = 10 V, ID = 13 A and 13.5 mΩ at VGS = 6 V, ID = 9.5 A.
  • High Efficiency: Advanced package and silicon combination for high efficiency.
  • Robust Package Design: MSL1 robust package design.
  • Compliance and Testing: 100% UIL tested, 100% Rg tested, and RoHS compliant.

Applications

The FDMS86101A is suitable for various applications, including:

  • DC-DC Conversion: Ideal for high-efficiency DC-DC converters due to its low on-state resistance and high switching performance.
  • General Power Management: Suitable for many different power management applications requiring high current handling and low losses.

Q & A

  1. What is the maximum drain to source voltage (VDS) of the FDMS86101A?

    100 V.

  2. What is the maximum drain current (ID) at TA and TC?

    13 A at TA and 60 A at TC.

  3. What is the on-state resistance (RDS(on)) at VGS = 10 V and ID = 13 A?

    8 mΩ.

  4. Is the FDMS86101A RoHS compliant?

    Yes, it is RoHS compliant.

  5. What is the package type of the FDMS86101A?

    8-PQFN (5x6).

  6. What is the MSL type of the FDMS86101A?

    MSL1.

  7. What are some typical applications of the FDMS86101A?

    DC-DC conversion and general power management.

  8. What is the gate to source threshold voltage (VGS(th)) of the FDMS86101A?

    ±4 V.

  9. Is the FDMS86101A 100% UIL tested and 100% Rg tested?

    Yes, it is 100% UIL tested and 100% Rg tested.

  10. What is the maximum power dissipation (PD) at TA and TC?

    2.5 W at TA and 104 W at TC.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:13A (Ta), 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:8mOhm @ 13A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:58 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4120 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta), 104W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-PQFN (5x6)
Package / Case:8-PowerTDFN
0 Remaining View Similar

In Stock

$3.24
47

Please send RFQ , we will respond immediately.

Similar Products

Part Number FDMS86101A FDMS86101E
Manufacturer onsemi onsemi
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 13A (Ta), 60A (Tc) 12.4A (Ta), 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 8mOhm @ 13A, 10V 8mOhm @ 13A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 58 nC @ 10 V 55 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4120 pF @ 50 V 3000 pF @ 50 V
FET Feature - -
Power Dissipation (Max) 2.5W (Ta), 104W (Tc) 2.5W (Ta), 104W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-PQFN (5x6) 8-PQFN (5x6)
Package / Case 8-PowerTDFN 8-PowerTDFN

Related Product By Categories

FDB38N30U
FDB38N30U
onsemi
MOSFET N CH 300V 38A D2PAK
FDMT80040DC
FDMT80040DC
onsemi
MOSFET N-CH 40V 420A 8PQFN
BUK7Y4R4-40EX
BUK7Y4R4-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 100A LFPAK56
STB75NF20
STB75NF20
STMicroelectronics
MOSFET N-CH 200V 75A D2PAK
FCH040N65S3-F155
FCH040N65S3-F155
onsemi
MOSFET N-CH 650V 65A TO247-3
NTMFS4C028NT1G
NTMFS4C028NT1G
onsemi
MOSFET N-CH 30V 16.4A/52A 5DFN
NX7002AKVL
NX7002AKVL
Nexperia USA Inc.
MOSFET N-CH 60V 190MA TO236AB
FDMC4435BZ-F127-L701
FDMC4435BZ-F127-L701
onsemi
SINGLE ST3 P Z MLP3.3X3.3
FDMS86163P-23507X
FDMS86163P-23507X
onsemi
FET -100V 22.0 MOHM PQFN56
FDD9507L-F085
FDD9507L-F085
onsemi
MOSFET P-CH 40V 100A DPAK
NTMFS5H409NLT3G
NTMFS5H409NLT3G
onsemi
MOSFET N-CH 40V 41A/270A 5DFN
STW6N120K3
STW6N120K3
STMicroelectronics
MOSFET N-CH 1200V 6A TO247

Related Product By Brand

MMSZ5267BT1G
MMSZ5267BT1G
onsemi
DIODE ZENER 75V 500MW SOD123
SMUN5313DW1T1G
SMUN5313DW1T1G
onsemi
TRANS PREBIAS 1NPN 1PNP 50V SC88
2SA2222SG
2SA2222SG
onsemi
TRANS PNP 50V 10A TO220ML
NSS60600MZ4T3G
NSS60600MZ4T3G
onsemi
TRANS PNP 60V 6A SOT223
FDA28N50F
FDA28N50F
onsemi
MOSFET N-CH 500V 28A TO3PN
FDD2572-F085
FDD2572-F085
onsemi
MOSFET N-CH 150V 4A/29A TO252AA
NLHV4052DTR2G
NLHV4052DTR2G
onsemi
IC MULTIPLEXER DP4T 16TSSOP
MC33072DR2G
MC33072DR2G
onsemi
IC OPAMP JFET 2 CIRCUIT 8SOIC
MC74VHC04DTR2G
MC74VHC04DTR2G
onsemi
IC INVERTER 6CH 1-INP 14TSSOP
NCP432BISNT1G
NCP432BISNT1G
onsemi
IC VREF SHUNT ADJ 0.5% SOT23-3
NCP177AMX330TCG
NCP177AMX330TCG
onsemi
IC REG LINEAR 3.3V 500MA 4XDFN
NCV8170AMX280TCG
NCV8170AMX280TCG
onsemi
IC REG LINEAR 2.8V 150MA 4XDFN