FDMS86101A
  • Share:

onsemi FDMS86101A

Manufacturer No:
FDMS86101A
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 13A/60A 8PQFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDMS86101A is an N-Channel MOSFET produced by onsemi, utilizing their advanced PowerTrench® process. This technology is specifically designed to minimize on-state resistance while maintaining superior switching performance. The device is suitable for a wide range of applications due to its general usage design.

Key Specifications

Parameter Value Unit
VDS (Drain to Source Voltage) 100 V
ID (Maximum Drain Current at TA) 13 A
ID (Maximum Drain Current at TC) 60 A
RDS(on) (Maximum On-State Resistance at VGS = 10 V, ID = 13 A) 8
RDS(on) (Maximum On-State Resistance at VGS = 6 V, ID = 9.5 A) 13.5
VGS(th) (Gate to Source Threshold Voltage) ±4 V
PD (Maximum Power Dissipation at TA) 2.5 W
PD (Maximum Power Dissipation at TC) 104 W
Package Type 8-PQFN (5x6)
MSL Type MSL1
RoHS Compliance Yes

Key Features

The FDMS86101A features several key advantages:

  • Advanced PowerTrench® Process: Minimizes on-state resistance and maintains superior switching performance.
  • Low On-State Resistance: RDS(on) of 8 mΩ at VGS = 10 V, ID = 13 A and 13.5 mΩ at VGS = 6 V, ID = 9.5 A.
  • High Efficiency: Advanced package and silicon combination for high efficiency.
  • Robust Package Design: MSL1 robust package design.
  • Compliance and Testing: 100% UIL tested, 100% Rg tested, and RoHS compliant.

Applications

The FDMS86101A is suitable for various applications, including:

  • DC-DC Conversion: Ideal for high-efficiency DC-DC converters due to its low on-state resistance and high switching performance.
  • General Power Management: Suitable for many different power management applications requiring high current handling and low losses.

Q & A

  1. What is the maximum drain to source voltage (VDS) of the FDMS86101A?

    100 V.

  2. What is the maximum drain current (ID) at TA and TC?

    13 A at TA and 60 A at TC.

  3. What is the on-state resistance (RDS(on)) at VGS = 10 V and ID = 13 A?

    8 mΩ.

  4. Is the FDMS86101A RoHS compliant?

    Yes, it is RoHS compliant.

  5. What is the package type of the FDMS86101A?

    8-PQFN (5x6).

  6. What is the MSL type of the FDMS86101A?

    MSL1.

  7. What are some typical applications of the FDMS86101A?

    DC-DC conversion and general power management.

  8. What is the gate to source threshold voltage (VGS(th)) of the FDMS86101A?

    ±4 V.

  9. Is the FDMS86101A 100% UIL tested and 100% Rg tested?

    Yes, it is 100% UIL tested and 100% Rg tested.

  10. What is the maximum power dissipation (PD) at TA and TC?

    2.5 W at TA and 104 W at TC.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:13A (Ta), 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:8mOhm @ 13A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:58 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4120 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta), 104W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-PQFN (5x6)
Package / Case:8-PowerTDFN
0 Remaining View Similar

In Stock

$3.24
47

Please send RFQ , we will respond immediately.

Similar Products

Part Number FDMS86101A FDMS86101E
Manufacturer onsemi onsemi
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 13A (Ta), 60A (Tc) 12.4A (Ta), 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 8mOhm @ 13A, 10V 8mOhm @ 13A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 58 nC @ 10 V 55 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4120 pF @ 50 V 3000 pF @ 50 V
FET Feature - -
Power Dissipation (Max) 2.5W (Ta), 104W (Tc) 2.5W (Ta), 104W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-PQFN (5x6) 8-PQFN (5x6)
Package / Case 8-PowerTDFN 8-PowerTDFN

Related Product By Categories

STP20NM50
STP20NM50
STMicroelectronics
MOSFET N-CH 500V 20A TO220AB
STD10NM60N
STD10NM60N
STMicroelectronics
MOSFET N-CH 600V 10A DPAK
BSS138PW,115
BSS138PW,115
Nexperia USA Inc.
MOSFET N-CH 60V 320MA SOT323
PHT6NQ10T,135
PHT6NQ10T,135
Nexperia USA Inc.
MOSFET N-CH 100V 3A SOT223
STWA88N65M5
STWA88N65M5
STMicroelectronics
MOSFET N-CH 650V 84A TO247
STD2HNK60Z
STD2HNK60Z
STMicroelectronics
MOSFET N-CH 600V 2A DPAK
STB30N65M5
STB30N65M5
STMicroelectronics
MOSFET N-CH 650V 22A D2PAK
STF3NK100Z
STF3NK100Z
STMicroelectronics
MOSFET N-CH 1000V 2.5A TO220FP
STF38N65M5
STF38N65M5
STMicroelectronics
MOSFET N-CH 650V 30A TO220FP
FDMA6676PZ
FDMA6676PZ
onsemi
MOSFET P-CH 30V 11A 6MICROFET
STP24N65M2
STP24N65M2
STMicroelectronics
MOSFET N-CH 650V 16A TO220
2N7002E-7-G
2N7002E-7-G
Diodes Incorporated
MOSFET N-CH 60V SOT23

Related Product By Brand

SZESD7461N2T5G
SZESD7461N2T5G
onsemi
TVS DIODE 16VWM 39VC 2XDFN
MMSZ5221BT1G
MMSZ5221BT1G
onsemi
DIODE ZENER 2.4V 500MW SOD123
MMBT6429LT1G
MMBT6429LT1G
onsemi
TRANS NPN 45V 0.2A SOT23-3
FDWS9508L_F085
FDWS9508L_F085
onsemi
MOSFET P-CH 40V 80A 8PQFN
FGHL75T65MQD
FGHL75T65MQD
onsemi
IGBT 650V 75A TO247
NCV2904VDR2G
NCV2904VDR2G
onsemi
IC OPAMP GP 2 CIRCUIT 8SOIC
MC74VHC04DTR2G
MC74VHC04DTR2G
onsemi
IC INVERTER 6CH 1-INP 14TSSOP
CD4081BCN
CD4081BCN
onsemi
IC GATE AND 4CH 2-INP 14DIP
FAN7385MX
FAN7385MX
onsemi
IC GATE DRVR HIGH-SIDE 14SOP
NCP335FCT2G
NCP335FCT2G
onsemi
IC PWR SWITCH P-CHAN 1:1 4WLCSP
MC78M05BDTT5G
MC78M05BDTT5G
onsemi
IC REG LINEAR 5V 500MA DPAK
LM2903DR2GH
LM2903DR2GH
onsemi
FIXED POSITIVE LDO REGULATOR