FDMS86101A
  • Share:

onsemi FDMS86101A

Manufacturer No:
FDMS86101A
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 13A/60A 8PQFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDMS86101A is an N-Channel MOSFET produced by onsemi, utilizing their advanced PowerTrench® process. This technology is specifically designed to minimize on-state resistance while maintaining superior switching performance. The device is suitable for a wide range of applications due to its general usage design.

Key Specifications

Parameter Value Unit
VDS (Drain to Source Voltage) 100 V
ID (Maximum Drain Current at TA) 13 A
ID (Maximum Drain Current at TC) 60 A
RDS(on) (Maximum On-State Resistance at VGS = 10 V, ID = 13 A) 8 mΩ
RDS(on) (Maximum On-State Resistance at VGS = 6 V, ID = 9.5 A) 13.5 mΩ
VGS(th) (Gate to Source Threshold Voltage) ±4 V
PD (Maximum Power Dissipation at TA) 2.5 W
PD (Maximum Power Dissipation at TC) 104 W
Package Type 8-PQFN (5x6)
MSL Type MSL1
RoHS Compliance Yes

Key Features

The FDMS86101A features several key advantages:

  • Advanced PowerTrench® Process: Minimizes on-state resistance and maintains superior switching performance.
  • Low On-State Resistance: RDS(on) of 8 mΩ at VGS = 10 V, ID = 13 A and 13.5 mΩ at VGS = 6 V, ID = 9.5 A.
  • High Efficiency: Advanced package and silicon combination for high efficiency.
  • Robust Package Design: MSL1 robust package design.
  • Compliance and Testing: 100% UIL tested, 100% Rg tested, and RoHS compliant.

Applications

The FDMS86101A is suitable for various applications, including:

  • DC-DC Conversion: Ideal for high-efficiency DC-DC converters due to its low on-state resistance and high switching performance.
  • General Power Management: Suitable for many different power management applications requiring high current handling and low losses.

Q & A

  1. What is the maximum drain to source voltage (VDS) of the FDMS86101A?

    100 V.

  2. What is the maximum drain current (ID) at TA and TC?

    13 A at TA and 60 A at TC.

  3. What is the on-state resistance (RDS(on)) at VGS = 10 V and ID = 13 A?

    8 mΩ.

  4. Is the FDMS86101A RoHS compliant?

    Yes, it is RoHS compliant.

  5. What is the package type of the FDMS86101A?

    8-PQFN (5x6).

  6. What is the MSL type of the FDMS86101A?

    MSL1.

  7. What are some typical applications of the FDMS86101A?

    DC-DC conversion and general power management.

  8. What is the gate to source threshold voltage (VGS(th)) of the FDMS86101A?

    ±4 V.

  9. Is the FDMS86101A 100% UIL tested and 100% Rg tested?

    Yes, it is 100% UIL tested and 100% Rg tested.

  10. What is the maximum power dissipation (PD) at TA and TC?

    2.5 W at TA and 104 W at TC.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:13A (Ta), 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:8mOhm @ 13A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:58 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4120 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta), 104W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-PQFN (5x6)
Package / Case:8-PowerTDFN
0 Remaining View Similar

In Stock

$3.24
47

Please send RFQ , we will respond immediately.

Similar Products

Part Number FDMS86101A FDMS86101E
Manufacturer onsemi onsemi
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 13A (Ta), 60A (Tc) 12.4A (Ta), 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 8mOhm @ 13A, 10V 8mOhm @ 13A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 58 nC @ 10 V 55 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4120 pF @ 50 V 3000 pF @ 50 V
FET Feature - -
Power Dissipation (Max) 2.5W (Ta), 104W (Tc) 2.5W (Ta), 104W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-PQFN (5x6) 8-PQFN (5x6)
Package / Case 8-PowerTDFN 8-PowerTDFN

Related Product By Categories

BSS84AKM,315
BSS84AKM,315
Nexperia USA Inc.
MOSFET P-CH 50V 230MA DFN1006-3
BSS84KW-TP
BSS84KW-TP
Micro Commercial Co
MOSFET P-CH 50V 130MA SOT323
FDB38N30U
FDB38N30U
onsemi
MOSFET N CH 300V 38A D2PAK
FDMC2523P
FDMC2523P
onsemi
MOSFET P-CH 150V 3A 8MLP
FDN357N
FDN357N
onsemi
MOSFET N-CH 30V 1.9A SUPERSOT3
FDD86250-F085
FDD86250-F085
onsemi
MOSFET N-CH 150V 50A TO252
STP11NK40Z
STP11NK40Z
STMicroelectronics
MOSFET N-CH 400V 9A TO220AB
BSS138K
BSS138K
onsemi
MOSFET N-CH 50V 220MA SOT23-3
BSS84PW
BSS84PW
Infineon Technologies
MOSFET P-CH 60V 150MA SOT323-3
PH1930AL,115
PH1930AL,115
Nexperia USA Inc.
MOSFET N-CH 30V 100A LFPAK56
MCH3477-TL-W
MCH3477-TL-W
onsemi
MOSFET N-CH 20V 4.5A SC70
AO3401AL_DELTA
AO3401AL_DELTA
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V SOT23

Related Product By Brand

MMBT3904LT1G
MMBT3904LT1G
onsemi
TRANS NPN 40V 0.2A SOT23-3
MMBT6429LT1G
MMBT6429LT1G
onsemi
TRANS NPN 45V 0.2A SOT23-3
2N3773G
2N3773G
onsemi
TRANS NPN 140V 16A TO204
MC74VHC1G32DTT1G
MC74VHC1G32DTT1G
onsemi
IC GATE OR 1CH 2-INP 5TSOP
MC74VHC1GT08EDFT2G
MC74VHC1GT08EDFT2G
onsemi
IC GATE AND 1CH 2-INP SC88A
CAT1021WI30
CAT1021WI30
onsemi
CAT1021 - SUPERVISORY CIRCUIT WI
UC3843AD1G
UC3843AD1G
onsemi
UC3843 CURRENT-MODE PWM CONTROLL
NCV1117ST18T3G
NCV1117ST18T3G
onsemi
IC REG LINEAR 1.8V 1A SOT223
NCP177AMX330TCG
NCP177AMX330TCG
onsemi
IC REG LINEAR 3.3V 500MA 4XDFN
NCV551SN50T1G
NCV551SN50T1G
onsemi
IC REG LINEAR 5V 150MA 5TSOP
LM317MBDT
LM317MBDT
onsemi
IC REG LINEAR POS ADJ 500MA DPAK
CS8190ENF16G
CS8190ENF16G
onsemi
IC DRIVER 16DIP