Overview
The PMV65XP/MIR is a 20 V, single P-channel Trench MOSFET produced by Nexperia USA Inc. This Field-Effect Transistor (FET) is designed in an enhancement mode and is packaged in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. The PMV65XP/MIR leverages Trench MOSFET technology, offering low threshold voltage and low on-state resistance, making it suitable for a variety of applications requiring high efficiency and reliability.
Key Specifications
| Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| VDS (drain-source voltage) | -20 | V | |||
| VGS (gate-source voltage) | Tj = 25 °C | -12 | 12 | V | |
| RDSon (drain-source on-state resistance) | VGS = -4.5 V; ID = -2.8 A; Tj = 25 °C | 58 | 74 | 82 | mΩ |
| RDSon (drain-source on-state resistance) | VGS = -2.5 V; ID = -2.3 A; Tj = 25 °C | 67 | 92 | mΩ | |
| Tj (junction temperature) | -55 | 150 | °C | ||
| ID (drain current) | VGS = -4.5 V; Tamb = 25 °C | -4.3 | A | ||
| Ptot (total power dissipation) | Tsp = 25 °C | 4165 | mW | ||
| VGSth (threshold voltage) | -0.65 | V |
Key Features
- Trench MOSFET Technology: Offers low on-state resistance and high efficiency.
- Low Threshold Voltage: Enhances switching performance and reduces power consumption.
- Small SOT23 Package: Compact design suitable for space-constrained applications.
- High Junction Temperature: Up to 150 °C, ensuring reliability in demanding environments.
- Compliance with Regulations: RoHS, REACH, and other environmental standards compliant.
Applications
- Low Power DC-to-DC Converters: Ideal for efficient power conversion in various electronic devices.
- Load Switching: Used in applications requiring high current switching capabilities.
- Battery Management: Suitable for battery-powered portable equipment and battery management systems.
- Automotive and Industrial Systems: Can be used in automotive, industrial, and other high-reliability applications due to its robust performance and compliance with automotive standards.
Q & A
- What is the maximum drain-source voltage (VDS) for the PMV65XP/MIR?
The maximum drain-source voltage (VDS) is -20 V.
- What is the typical threshold voltage (VGSth) for this MOSFET?
The typical threshold voltage (VGSth) is -0.65 V.
- What is the maximum drain current (ID) at VGS = -4.5 V and Tamb = 25 °C?
The maximum drain current (ID) is -4.3 A.
- What is the maximum junction temperature (Tj) for the PMV65XP/MIR?
The maximum junction temperature (Tj) is 150 °C.
- Is the PMV65XP/MIR compliant with RoHS and REACH regulations?
Yes, the PMV65XP/MIR is compliant with RoHS, REACH, and other environmental standards.
- What package type is used for the PMV65XP/MIR?
The PMV65XP/MIR is packaged in a SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
- What are some typical applications for the PMV65XP/MIR?
Typical applications include low power DC-to-DC converters, load switching, battery management, and automotive and industrial systems).
- What is the maximum total power dissipation (Ptot) for the PMV65XP/MIR?
The maximum total power dissipation (Ptot) is 4165 mW at Tsp = 25 °C).
- How does the PMV65XP/MIR perform in terms of on-state resistance?
The PMV65XP/MIR has a low on-state resistance, with RDSon typically around 74 mΩ at VGS = -4.5 V and ID = -2.8 A at Tj = 25 °C).
- Is the PMV65XP/MIR suitable for high-temperature environments?
Yes, the PMV65XP/MIR is suitable for high-temperature environments with a maximum junction temperature of 150 °C).
