BSS138PW,115
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Nexperia USA Inc. BSS138PW,115

Manufacturer No:
BSS138PW,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 320MA SOT323
Delivery:
Payment:
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Product Introduction

Overview

The BSS138PW,115 is an N-channel enhancement mode Field-Effect Transistor (FET) manufactured by Nexperia USA Inc. This MOSFET is packaged in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package, utilizing Trench MOSFET technology. It is designed for high-performance applications, particularly in the automotive sector, and is AEC-Q101 qualified, ensuring reliability and durability in demanding environments.

Key Specifications

Parameter Conditions Min Typ Max Unit
VDS (Drain-Source Voltage) T = 25°C - - 60 V
VGS (Gate-Source Voltage) T = 25°C - - ±20 V
ID (Drain Current) VGS = 10V, T = 25°C - - 320 mA A
RDSon (Drain-Source On-State Resistance) VGS = 10V, ID = 300 mA - 0.9 1.6
Ptot (Total Power Dissipation) Ta = 25°C - - 260 mW W
Tj (Junction Temperature) - - - 150 °C
VGS(th) (Gate-Source Threshold Voltage) ID = 250 µA - - 1.6 V

Key Features

  • Logic-level compatible
  • Very fast switching
  • Trench MOSFET technology for high efficiency
  • AEC-Q101 qualified for automotive applications
  • Small SOT323 (SC-70) package for compact designs
  • High drain-source voltage (VDS) of 60V
  • Low on-state resistance (RDSon) of up to 1.6 mΩ at VGS = 10V

Applications

  • Relay driver
  • High-speed line driver
  • Low-side load switch
  • Switching circuits
  • Automotive systems due to AEC-Q101 qualification

Q & A

  1. What is the BSS138PW,115 MOSFET used for?

    The BSS138PW,115 is used in various applications including relay drivers, high-speed line drivers, low-side load switches, and switching circuits, particularly in automotive systems due to its AEC-Q101 qualification.

  2. What is the maximum drain-source voltage of the BSS138PW,115?

    The maximum drain-source voltage (VDS) is 60V.

  3. What is the maximum gate-source voltage of the BSS138PW,115?

    The maximum gate-source voltage (VGS) is ±20V.

  4. What is the continuous drain current of the BSS138PW,115 at 25°C?

    The continuous drain current (ID) at 25°C is 320 mA.

  5. What is the on-state resistance of the BSS138PW,115?

    The on-state resistance (RDSon) is up to 1.6 mΩ at VGS = 10V and ID = 300 mA.

  6. What package type is the BSS138PW,115 available in?

    The BSS138PW,115 is available in a SOT323 (SC-70) surface-mounted package.

  7. Is the BSS138PW,115 suitable for automotive applications?

    Yes, the BSS138PW,115 is AEC-Q101 qualified, making it suitable for automotive applications.

  8. What is the junction temperature range of the BSS138PW,115?

    The junction temperature (Tj) range is up to 150°C.

  9. What is the gate-source threshold voltage of the BSS138PW,115?

    The gate-source threshold voltage (VGS(th)) is up to 1.6V at ID = 250 µA.

  10. Where can I purchase the BSS138PW,115?

    The BSS138PW,115 can be purchased from various distributors such as X-ON Electronics, Arrow Electronics, and directly from Nexperia’s sales organization.

  11. What are the key benefits of using Trench MOSFET technology in the BSS138PW,115?

    Trench MOSFET technology provides very fast switching and high efficiency, making it ideal for high-performance applications.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:320mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.6Ohm @ 300mA, 10V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.8 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):260mW (Ta), 830mW (Tc)
Operating Temperature:-55°C ~ 150°C (TA)
Mounting Type:Surface Mount
Supplier Device Package:SOT-323
Package / Case:SC-70, SOT-323
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