BSS138PW,115
  • Share:

Nexperia USA Inc. BSS138PW,115

Manufacturer No:
BSS138PW,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 320MA SOT323
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSS138PW,115 is an N-channel enhancement mode Field-Effect Transistor (FET) manufactured by Nexperia USA Inc. This MOSFET is packaged in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package, utilizing Trench MOSFET technology. It is designed for high-performance applications, particularly in the automotive sector, and is AEC-Q101 qualified, ensuring reliability and durability in demanding environments.

Key Specifications

Parameter Conditions Min Typ Max Unit
VDS (Drain-Source Voltage) T = 25°C - - 60 V
VGS (Gate-Source Voltage) T = 25°C - - ±20 V
ID (Drain Current) VGS = 10V, T = 25°C - - 320 mA A
RDSon (Drain-Source On-State Resistance) VGS = 10V, ID = 300 mA - 0.9 1.6
Ptot (Total Power Dissipation) Ta = 25°C - - 260 mW W
Tj (Junction Temperature) - - - 150 °C
VGS(th) (Gate-Source Threshold Voltage) ID = 250 µA - - 1.6 V

Key Features

  • Logic-level compatible
  • Very fast switching
  • Trench MOSFET technology for high efficiency
  • AEC-Q101 qualified for automotive applications
  • Small SOT323 (SC-70) package for compact designs
  • High drain-source voltage (VDS) of 60V
  • Low on-state resistance (RDSon) of up to 1.6 mΩ at VGS = 10V

Applications

  • Relay driver
  • High-speed line driver
  • Low-side load switch
  • Switching circuits
  • Automotive systems due to AEC-Q101 qualification

Q & A

  1. What is the BSS138PW,115 MOSFET used for?

    The BSS138PW,115 is used in various applications including relay drivers, high-speed line drivers, low-side load switches, and switching circuits, particularly in automotive systems due to its AEC-Q101 qualification.

  2. What is the maximum drain-source voltage of the BSS138PW,115?

    The maximum drain-source voltage (VDS) is 60V.

  3. What is the maximum gate-source voltage of the BSS138PW,115?

    The maximum gate-source voltage (VGS) is ±20V.

  4. What is the continuous drain current of the BSS138PW,115 at 25°C?

    The continuous drain current (ID) at 25°C is 320 mA.

  5. What is the on-state resistance of the BSS138PW,115?

    The on-state resistance (RDSon) is up to 1.6 mΩ at VGS = 10V and ID = 300 mA.

  6. What package type is the BSS138PW,115 available in?

    The BSS138PW,115 is available in a SOT323 (SC-70) surface-mounted package.

  7. Is the BSS138PW,115 suitable for automotive applications?

    Yes, the BSS138PW,115 is AEC-Q101 qualified, making it suitable for automotive applications.

  8. What is the junction temperature range of the BSS138PW,115?

    The junction temperature (Tj) range is up to 150°C.

  9. What is the gate-source threshold voltage of the BSS138PW,115?

    The gate-source threshold voltage (VGS(th)) is up to 1.6V at ID = 250 µA.

  10. Where can I purchase the BSS138PW,115?

    The BSS138PW,115 can be purchased from various distributors such as X-ON Electronics, Arrow Electronics, and directly from Nexperia’s sales organization.

  11. What are the key benefits of using Trench MOSFET technology in the BSS138PW,115?

    Trench MOSFET technology provides very fast switching and high efficiency, making it ideal for high-performance applications.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:320mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.6Ohm @ 300mA, 10V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.8 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):260mW (Ta), 830mW (Tc)
Operating Temperature:-55°C ~ 150°C (TA)
Mounting Type:Surface Mount
Supplier Device Package:SOT-323
Package / Case:SC-70, SOT-323
0 Remaining View Similar

In Stock

$0.31
3,167

Please send RFQ , we will respond immediately.

Related Product By Categories

STB170NF04
STB170NF04
STMicroelectronics
MOSFET N-CH 40V 80A D2PAK
NVR5124PLT1G
NVR5124PLT1G
onsemi
MOSFET P-CH 60V 1.1A SOT23-3
FQT7N10LTF
FQT7N10LTF
onsemi
MOSFET N-CH 100V 1.7A SOT223-4
STN1NK80Z
STN1NK80Z
STMicroelectronics
MOSFET N-CH 800V 250MA SOT223
BUK7240-100A,118
BUK7240-100A,118
Nexperia USA Inc.
MOSFET N-CH 100V 34A DPAK
NTMFS6H818NT1G
NTMFS6H818NT1G
onsemi
MOSFET N-CH 80V 20A/123A 5DFN
NVMFS6H852NLT1G
NVMFS6H852NLT1G
onsemi
MOSFET N-CH 80V 11A/42A 5DFN
NVHL025N65S3
NVHL025N65S3
onsemi
MOSFET N-CH 650V 75A TO247-3
BSS84-7
BSS84-7
Diodes Incorporated
MOSFET P-CH 50V 130MA SOT23-3
NTD4909NT4G
NTD4909NT4G
onsemi
MOSFET N-CH 30V 8.8A/41A DPAK
BSS138W-7-F-79
BSS138W-7-F-79
Diodes Incorporated
DIODE
PMZB290UN/FYL
PMZB290UN/FYL
NXP USA Inc.
PMZB290UN/FYL

Related Product By Brand

PMEG4030ER/8X
PMEG4030ER/8X
Nexperia USA Inc.
DIODE SCHOTTKY 40V 3A SOD123W
PMEG4005EJF
PMEG4005EJF
Nexperia USA Inc.
PMEG4005EJ/SOD323/SOD2
BZV55-C33,115
BZV55-C33,115
Nexperia USA Inc.
DIODE ZENER 33V 500MW LLDS
BZX84-C9V1/DG/B4R
BZX84-C9V1/DG/B4R
Nexperia USA Inc.
DIODE ZENER 9.05V 250MW TO236AB
BC857BQB-QZ
BC857BQB-QZ
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR IN DFN PACK
PBSS5540Z/ZLX
PBSS5540Z/ZLX
Nexperia USA Inc.
TRANS PNP 40V 5A SOT223
BCP56-QF
BCP56-QF
Nexperia USA Inc.
TRANS NPN 80V 1A SOT223
PDTC123JT,215
PDTC123JT,215
Nexperia USA Inc.
TRANS PREBIAS NPN 50V TO236AB
74LVC1G126GW-Q100H
74LVC1G126GW-Q100H
Nexperia USA Inc.
IC BUF NON-INVERT 5.5V 5TSSOP
74AHC1G04GV-Q100H
74AHC1G04GV-Q100H
Nexperia USA Inc.
IC INVERTER 1CH 1-INP SC74A
74HCT1G00GV125
74HCT1G00GV125
Nexperia USA Inc.
IC GATE NAND 1CH 2-INP SC74A
74AHC573D,118
74AHC573D,118
Nexperia USA Inc.
IC OCTAL D TRANSP LATCH 20SOIC