STP36NF06L
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STMicroelectronics STP36NF06L

Manufacturer No:
STP36NF06L
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 60V 30A TO220AB
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Product Introduction

Overview

The STP36NF06L is a high-performance N-channel power MOSFET developed by STMicroelectronics. It is part of the STripFET™ II family, which utilizes STMicroelectronics' unique “Single Feature Size™” strip-based process. This technology enhances the transistor's performance, making it suitable for a wide range of industrial and automotive applications. The STP36NF06L is known for its medium-voltage capabilities, offering a drain-source voltage of 60V and an on-resistance of 0.032 Ohms, making it an efficient choice for power management and control systems.

Key Specifications

Parameter Value Unit
Drain-source Voltage (VDS) 60 V
Drain-gate Voltage (VDGR) 60 V
Gate-source Voltage (VGS) ±20 V
On-resistance (RDS(on)) 0.032 Ω
Continuous Drain Current (ID) 30 A
Package Type TO-220, D2PAK

Key Features

  • High efficiency due to low on-resistance (RDS(on) = 0.032 Ohms)
  • High current capability (ID = 30A)
  • Medium-voltage operation (VDS = 60V)
  • STripFET™ II technology for enhanced performance
  • Avaliable in TO-220 and D2PAK packages

Applications

  • Industrial power supplies and converters
  • Automotive systems (e.g., battery management, motor control)
  • Power management and control systems
  • Switch-mode power supplies
  • Motor drives and control circuits

Q & A

  1. What is the maximum drain-source voltage of the STP36NF06L?

    The maximum drain-source voltage (VDS) is 60V.

  2. What is the on-resistance (RDS(on)) of the STP36NF06L?

    The on-resistance (RDS(on)) is 0.032 Ohms.

  3. What is the continuous drain current (ID) of the STP36NF06L?

    The continuous drain current (ID) is 30A.

  4. In which packages is the STP36NF06L available?

    The STP36NF06L is available in TO-220 and D2PAK packages.

  5. What technology is used in the STP36NF06L?

    The STP36NF06L uses STMicroelectronics' STripFET™ II technology.

  6. What are some typical applications of the STP36NF06L?

    Typical applications include industrial power supplies, automotive systems, power management and control systems, switch-mode power supplies, and motor drives.

  7. What is the maximum gate-source voltage (VGS) for the STP36NF06L?

    The maximum gate-source voltage (VGS) is ±20V.

  8. Why is the STP36NF06L considered efficient?

    The STP36NF06L is considered efficient due to its low on-resistance and high current capability.

  9. Where can I purchase the STP36NF06L?

    The STP36NF06L can be purchased from STMicroelectronics' online store, as well as from distributors like Future Electronics, Digi-Key, and Mouser.

  10. What is the significance of the “Single Feature Size™” strip-based process in the STP36NF06L?

    The “Single Feature Size™” strip-based process enhances the transistor's performance by optimizing the device's structure for better electrical characteristics.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:30A (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:40mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:17 nC @ 5 V
Vgs (Max):±18V
Input Capacitance (Ciss) (Max) @ Vds:660 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):70W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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Same Series
STB36NF06LT4
STB36NF06LT4
MOSFET N-CH 60V 30A D2PAK

Similar Products

Part Number STP36NF06L STP36NF06
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 30A (Tc) 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 10V
Rds On (Max) @ Id, Vgs 40mOhm @ 15A, 10V 40mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 5 V 31 nC @ 10 V
Vgs (Max) ±18V ±20V
Input Capacitance (Ciss) (Max) @ Vds 660 pF @ 25 V 690 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 70W (Tc) 70W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220 TO-220
Package / Case TO-220-3 TO-220-3

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