FDP032N08B-F102
  • Share:

onsemi FDP032N08B-F102

Manufacturer No:
FDP032N08B-F102
Manufacturer:
onsemi
Package:
Tube
Description:
MOSFET N-CH 80V 120A TO220-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDP032N08B-F102 is a high-performance N-channel power MOSFET produced by onsemi. This device is designed to provide high current handling and low on-resistance, making it suitable for a variety of power management and switching applications. The MOSFET is packaged in a TO-220-3 case, which is widely used in industrial and consumer electronics for its robustness and ease of mounting.

Key Specifications

ParameterValueUnit
VDS (Drain-Source Voltage)80V
ID (Continuous Drain Current)211A
PD (Power Dissipation)263W
RDS(ON) (On-Resistance)3.3 mΩ @ 10V, 100A
VGS(th) (Threshold Voltage)4.5 V @ 250 μAV
PackageTO-220-3

Key Features

  • High current handling capability of up to 211 A.
  • Low on-resistance of 3.3 mΩ at 10 V and 100 A.
  • High power dissipation of 263 W.
  • Threshold voltage of 4.5 V at 250 μA.
  • TO-220-3 package for robust and easy mounting.
  • RoHS compliant.

Applications

The FDP032N08B-F102 is suitable for various power management and switching applications, including but not limited to:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Industrial automation and control systems.
  • Automotive systems requiring high current and low on-resistance.
  • Consumer electronics needing efficient power switching.

Q & A

  1. What is the maximum drain-source voltage of the FDP032N08B-F102?
    The maximum drain-source voltage is 80 V.
  2. What is the continuous drain current rating of this MOSFET?
    The continuous drain current rating is 211 A.
  3. What is the on-resistance of the FDP032N08B-F102 at 10 V and 100 A?
    The on-resistance is 3.3 mΩ at 10 V and 100 A.
  4. What is the threshold voltage of this MOSFET?
    The threshold voltage is 4.5 V at 250 μA.
  5. In what package is the FDP032N08B-F102 available?
    The FDP032N08B-F102 is available in a TO-220-3 package.
  6. Is the FDP032N08B-F102 RoHS compliant?
    Yes, the FDP032N08B-F102 is RoHS compliant.
  7. What are some common applications for the FDP032N08B-F102?
    Common applications include power supplies, DC-DC converters, motor control systems, industrial automation, and automotive systems.
  8. What is the maximum power dissipation of the FDP032N08B-F102?
    The maximum power dissipation is 263 W.
  9. Where can I find detailed specifications for the FDP032N08B-F102?
    Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Mouser and Farnell.
  10. Is the FDP032N08B-F102 suitable for high-current applications?
    Yes, the FDP032N08B-F102 is designed for high-current applications due to its high current handling capability.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3.3mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:144 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:10965 pF @ 40 V
FET Feature:- 
Power Dissipation (Max):263W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

$3.06
111

Please send RFQ , we will respond immediately.

Similar Products

Part Number FDP032N08B-F102 FDP039N08B-F102 FDP032N08-F102
Manufacturer onsemi Fairchild Semiconductor onsemi
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V 80 V 75 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc) 120A (Tc) 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 3.3mOhm @ 100A, 10V 3.9mOhm @ 100A, 10V 3.2mOhm @ 75A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA 4.5V @ 250µA 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 144 nC @ 10 V 133 nC @ 10 V 220 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 10965 pF @ 40 V 9450 pF @ 40 V 15160 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 263W (Tc) 214W (Tc) 375W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220-3 TO-220
Package / Case TO-220-3 TO-220-3 TO-220-3

Related Product By Categories

BSS84AKM,315
BSS84AKM,315
Nexperia USA Inc.
MOSFET P-CH 50V 230MA DFN1006-3
2N7002HSX
2N7002HSX
Nexperia USA Inc.
2N7002HS/SOT363/SC-88
NTH4LN019N65S3H
NTH4LN019N65S3H
onsemi
POWER MOSFET, N-CHANNEL, SUPERFE
BUK98180-100A/CUX
BUK98180-100A/CUX
Nexperia USA Inc.
MOSFET N-CH 100V 4.6A SOT223
NTS4173PT1G
NTS4173PT1G
onsemi
MOSFET P-CH 30V 1.2A SC70-3
STD5N52K3
STD5N52K3
STMicroelectronics
MOSFET N-CH 525V 4.4A DPAK
BUK9635-55A,118
BUK9635-55A,118
Nexperia USA Inc.
MOSFET N-CH 55V 34A D2PAK
STF9N60M2
STF9N60M2
STMicroelectronics
MOSFET N-CH 600V 5.5A TO220FP
STL10N65M2
STL10N65M2
STMicroelectronics
MOSFET N-CH 650V 4.5A POWERFLAT
BUK9222-55A,118
BUK9222-55A,118
Nexperia USA Inc.
MOSFET N-CH 55V 48A DPAK
2SJ652-1E
2SJ652-1E
onsemi
MOSFET P-CH 60V 28A TO220F-3SG
STP24N65M2
STP24N65M2
STMicroelectronics
MOSFET N-CH 650V 16A TO220

Related Product By Brand

ESD7481MUT5G
ESD7481MUT5G
onsemi
TVS DIODE 3.3VWM 12VC 2X3DFN
MMBT4401LT1G
MMBT4401LT1G
onsemi
TRANS NPN 40V 0.6A SOT23-3
BD682T
BD682T
onsemi
TRANS PNP DARL 100V 4A TO126
NTD3055L170-1G
NTD3055L170-1G
onsemi
MOSFET N-CH 60V 9A IPAK
BMS3004-1EX
BMS3004-1EX
onsemi
MOSFET P-CH TO220-3
FDWS9508L_F085
FDWS9508L_F085
onsemi
MOSFET P-CH 40V 80A 8PQFN
STK672-432AN-E
STK672-432AN-E
onsemi
IC MOTOR DRIVER UNIPOLAR 19SIP
NCP302HSN27T1G
NCP302HSN27T1G
onsemi
IC SUPERVISOR 1 CHANNEL 5TSOP
UC2844D
UC2844D
onsemi
CURRENT MODE PWM CONTROLLER
LM2903DR2GH
LM2903DR2GH
onsemi
FIXED POSITIVE LDO REGULATOR
NCV4299D2
NCV4299D2
onsemi
IC REG LINEAR 5V 150MA 14SOIC
CS8190ENF16G
CS8190ENF16G
onsemi
IC DRIVER 16DIP