FDP032N08B-F102
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onsemi FDP032N08B-F102

Manufacturer No:
FDP032N08B-F102
Manufacturer:
onsemi
Package:
Tube
Description:
MOSFET N-CH 80V 120A TO220-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDP032N08B-F102 is a high-performance N-channel power MOSFET produced by onsemi. This device is designed to provide high current handling and low on-resistance, making it suitable for a variety of power management and switching applications. The MOSFET is packaged in a TO-220-3 case, which is widely used in industrial and consumer electronics for its robustness and ease of mounting.

Key Specifications

ParameterValueUnit
VDS (Drain-Source Voltage)80V
ID (Continuous Drain Current)211A
PD (Power Dissipation)263W
RDS(ON) (On-Resistance)3.3 mΩ @ 10V, 100A
VGS(th) (Threshold Voltage)4.5 V @ 250 μAV
PackageTO-220-3

Key Features

  • High current handling capability of up to 211 A.
  • Low on-resistance of 3.3 mΩ at 10 V and 100 A.
  • High power dissipation of 263 W.
  • Threshold voltage of 4.5 V at 250 μA.
  • TO-220-3 package for robust and easy mounting.
  • RoHS compliant.

Applications

The FDP032N08B-F102 is suitable for various power management and switching applications, including but not limited to:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Industrial automation and control systems.
  • Automotive systems requiring high current and low on-resistance.
  • Consumer electronics needing efficient power switching.

Q & A

  1. What is the maximum drain-source voltage of the FDP032N08B-F102?
    The maximum drain-source voltage is 80 V.
  2. What is the continuous drain current rating of this MOSFET?
    The continuous drain current rating is 211 A.
  3. What is the on-resistance of the FDP032N08B-F102 at 10 V and 100 A?
    The on-resistance is 3.3 mΩ at 10 V and 100 A.
  4. What is the threshold voltage of this MOSFET?
    The threshold voltage is 4.5 V at 250 μA.
  5. In what package is the FDP032N08B-F102 available?
    The FDP032N08B-F102 is available in a TO-220-3 package.
  6. Is the FDP032N08B-F102 RoHS compliant?
    Yes, the FDP032N08B-F102 is RoHS compliant.
  7. What are some common applications for the FDP032N08B-F102?
    Common applications include power supplies, DC-DC converters, motor control systems, industrial automation, and automotive systems.
  8. What is the maximum power dissipation of the FDP032N08B-F102?
    The maximum power dissipation is 263 W.
  9. Where can I find detailed specifications for the FDP032N08B-F102?
    Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Mouser and Farnell.
  10. Is the FDP032N08B-F102 suitable for high-current applications?
    Yes, the FDP032N08B-F102 is designed for high-current applications due to its high current handling capability.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3.3mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:144 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:10965 pF @ 40 V
FET Feature:- 
Power Dissipation (Max):263W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
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Similar Products

Part Number FDP032N08B-F102 FDP039N08B-F102 FDP032N08-F102
Manufacturer onsemi Fairchild Semiconductor onsemi
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V 80 V 75 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc) 120A (Tc) 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 3.3mOhm @ 100A, 10V 3.9mOhm @ 100A, 10V 3.2mOhm @ 75A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA 4.5V @ 250µA 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 144 nC @ 10 V 133 nC @ 10 V 220 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 10965 pF @ 40 V 9450 pF @ 40 V 15160 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 263W (Tc) 214W (Tc) 375W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220-3 TO-220
Package / Case TO-220-3 TO-220-3 TO-220-3

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