FGH40N60SFDTU
  • Share:

onsemi FGH40N60SFDTU

Manufacturer No:
FGH40N60SFDTU
Manufacturer:
onsemi
Package:
Tube
Description:
IGBT FIELD STOP 600V 80A TO247-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FGH40N60SFDTU is a 600 V, 40 A Field Stop Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi. This device utilizes novel Field Stop IGBT technology, offering optimal performance for applications requiring low conduction and switching losses. It is particularly suited for automotive chargers, inverters, and other high-voltage auxiliary systems. The FGH40N60SFDTU is qualified to meet the stringent automotive requirements of AEC-Q101 and is Pb-free and RoHS compliant, ensuring environmental sustainability and reliability in harsh environments.

Key Specifications

Parameter Symbol Ratings Unit
Collector to Emitter Voltage VCES 600 V
Gate to Emitter Voltage VGES ±20 V
Transient Gate-to-Emitter Voltage ±30 V
Collector Current at TC = 25°C IC 80 A
Collector Current at TC = 100°C IC 40 A
Pulsed Collector Current at TC = 25°C ICM 120 A
Maximum Power Dissipation at TC = 25°C PD 290 W
Maximum Power Dissipation at TC = 100°C PD 116 W
Operating Junction Temperature TJ -55 to +150 °C
Storage Temperature Range Tstg -55 to +150 °C
Maximum Lead Temperature for Soldering TL 300 °C
Thermal Resistance, Junction-to-Case (IGBT) RθJC (IGBT) 0.43 °C/W
Thermal Resistance, Junction-to-Ambient RθJA 40 °C/W
Saturation Voltage at IC = 40 A, VGE = 15 V VCE(sat) 2.3 V
Turn-On Delay Time at VCC = 400 V, IC = 40 A td(on) 21 ns
Turn-Off Delay Time at VCC = 400 V, IC = 40 A td(off) 138 ns

Key Features

  • High Current Capability: The device can handle up to 40 A of collector current at 100°C and 80 A at 25°C.
  • Low Saturation Voltage: VCE(sat) of 2.3 V at IC = 40 A, ensuring low conduction losses.
  • High Input Impedance: Reduces the gate drive requirements.
  • Fast Switching: Fast turn-on and turn-off times minimize switching losses.
  • Automotive Qualification: Qualified to meet the automotive requirements of AEC-Q101.
  • Environmental Compliance: Pb-free and RoHS compliant.

Applications

  • Automotive Chargers and Converters: Ideal for high-efficiency charging systems.
  • Inverters and Power Factor Correction (PFC): Suitable for high-power inverter applications and PFC circuits.
  • High Voltage Auxiliaries: Used in various high-voltage auxiliary systems in automotive and industrial applications.
  • UPS Systems: Applicable in uninterruptible power supply systems where high reliability and efficiency are crucial.

Q & A

  1. What is the maximum collector to emitter voltage of the FGH40N60SFDTU?

    The maximum collector to emitter voltage (VCES) is 600 V.

  2. What is the maximum collector current at 25°C and 100°C?

    The maximum collector current is 80 A at 25°C and 40 A at 100°C.

  3. What is the typical saturation voltage at IC = 40 A and VGE = 15 V?

    The typical saturation voltage (VCE(sat)) is 2.3 V.

  4. Is the FGH40N60SFDTU qualified for automotive applications?

    Yes, it is qualified to meet the automotive requirements of AEC-Q101.

  5. What is the thermal resistance from junction to case for the IGBT?

    The thermal resistance from junction to case (RθJC) for the IGBT is 0.43 °C/W.

  6. What are the typical turn-on and turn-off delay times?

    The typical turn-on delay time (td(on)) is 21 ns, and the typical turn-off delay time (td(off)) is 138 ns.

  7. Is the FGH40N60SFDTU Pb-free and RoHS compliant?

    Yes, the device is Pb-free and RoHS compliant.

  8. What are the common applications of the FGH40N60SFDTU?

    Common applications include automotive chargers, inverters, PFC, UPS, and high-voltage auxiliaries.

  9. What is the maximum power dissipation at 25°C and 100°C?

    The maximum power dissipation is 290 W at 25°C and 116 W at 100°C.

  10. What is the operating junction temperature range?

    The operating junction temperature range is -55 to +150 °C.

Product Attributes

IGBT Type:Field Stop
Voltage - Collector Emitter Breakdown (Max):600 V
Current - Collector (Ic) (Max):80 A
Current - Collector Pulsed (Icm):120 A
Vce(on) (Max) @ Vge, Ic:2.9V @ 15V, 40A
Power - Max:290 W
Switching Energy:1.13mJ (on), 310µJ (off)
Input Type:Standard
Gate Charge:120 nC
Td (on/off) @ 25°C:25ns/115ns
Test Condition:400V, 40A, 10Ohm, 15V
Reverse Recovery Time (trr):45 ns
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-247-3
Supplier Device Package:TO-247-3
0 Remaining View Similar

In Stock

$4.88
119

Please send RFQ , we will respond immediately.

Similar Products

Part Number FGH40N60SFDTU FGH60N60SFDTU FGH40N60SFTU FGH40N60UFDTU FGH20N60SFDTU
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Obsolete Active Active
IGBT Type Field Stop Field Stop Field Stop Field Stop Field Stop
Voltage - Collector Emitter Breakdown (Max) 600 V 600 V 600 V 600 V 600 V
Current - Collector (Ic) (Max) 80 A 120 A 80 A 80 A 40 A
Current - Collector Pulsed (Icm) 120 A 180 A 120 A 120 A 60 A
Vce(on) (Max) @ Vge, Ic 2.9V @ 15V, 40A 2.9V @ 15V, 60A 2.9V @ 15V, 40A 2.4V @ 15V, 40A 2.8V @ 15V, 20A
Power - Max 290 W 378 W 290 W 290 W 165 W
Switching Energy 1.13mJ (on), 310µJ (off) 1.79mJ (on), 670µJ (off) 1.13mJ (on), 310µJ (off) 1.19mJ (on), 460µJ (off) 370µJ (on), 160µJ (off)
Input Type Standard Standard Standard Standard Standard
Gate Charge 120 nC 198 nC 120 nC 120 nC 65 nC
Td (on/off) @ 25°C 25ns/115ns 22ns/134ns 25ns/115ns 24ns/112ns 13ns/90ns
Test Condition 400V, 40A, 10Ohm, 15V 400V, 60A, 5Ohm, 15V 400V, 40A, 10Ohm, 15V 400V, 40A, 10Ohm, 15V 400V, 20A, 10Ohm, 15V
Reverse Recovery Time (trr) 45 ns 47 ns - 45 ns 34 ns
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3
Supplier Device Package TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3

Related Product By Categories

HGT1S10N120BNST
HGT1S10N120BNST
onsemi
IGBT 1200V 35A 298W TO263AB
FGH40N60UFDTU
FGH40N60UFDTU
onsemi
IGBT FIELD STOP 600V 80A TO247-3
STGWA25M120DF3
STGWA25M120DF3
STMicroelectronics
IGBT 1200V 50A 375W TO247
STGB14NC60KDT4
STGB14NC60KDT4
STMicroelectronics
IGBT 600V 25A 80W D2PAK
STGF8NC60KD
STGF8NC60KD
STMicroelectronics
IGBT 600V 7A 24W TO220FP
STGWA40H65DFB
STGWA40H65DFB
STMicroelectronics
IGBT TRENCH 650V 80A TO247
ISL9V3040D3ST-F085C
ISL9V3040D3ST-F085C
onsemi
ECOSPARK1 IGN-IGBT TO252
STGB30H60DFB
STGB30H60DFB
STMicroelectronics
TRENCH GATE FIELD-STOP IGBT, HB
ISL9V5045S3ST-F085C
ISL9V5045S3ST-F085C
onsemi
ECOSPARK1 IGN-IGBT TO263
STGWT80H65DFB
STGWT80H65DFB
STMicroelectronics
IGBT 650V 120A 469W TO3P-3L
STGWA60H65DFB
STGWA60H65DFB
STMicroelectronics
IGBT BIPO 650V 60A TO247-3
STGF7NC60HD
STGF7NC60HD
STMicroelectronics
IGBT 600V 10A 25W TO220FP

Related Product By Brand

BAS16M3T5G
BAS16M3T5G
onsemi
DIODE GEN PURP 100V 200MA SOT723
BZX84C24ET1G
BZX84C24ET1G
onsemi
DIODE ZENER 24V 225MW SOT23-3
2N7002KW
2N7002KW
onsemi
MOSFET N-CH 60V 310MA SC70
LM301ADR2G
LM301ADR2G
onsemi
IC OPAMP GP 1 CIRCUIT 8SOIC
NCS2325DR2G
NCS2325DR2G
onsemi
IC OPAMP ZER-DRIFT 2CIRC 8SOIC
NLSV2T244DR2G
NLSV2T244DR2G
onsemi
IC TRNSLTR UNIDIRECTIONAL 8SOIC
NCP1015AP100G
NCP1015AP100G
onsemi
IC OFFLINE SWITCH FLYBACK 7DIP
NCS29001DR2G
NCS29001DR2G
onsemi
IC LED DRIVER CTRLR PWM 14SOIC
TLV431ALPG
TLV431ALPG
onsemi
IC VREF SHUNT ADJ 1% TO92-3
NCP177AMX330TCG
NCP177AMX330TCG
onsemi
IC REG LINEAR 3.3V 500MA 4XDFN
NCV4269AD150R2G
NCV4269AD150R2G
onsemi
IC REG LINEAR 5V 150MA 8SOIC
MC33269DTRK-3.3
MC33269DTRK-3.3
onsemi
IC REG LDO 0.8A 3.3V DPAK