FGH40N60SFDTU
  • Share:

onsemi FGH40N60SFDTU

Manufacturer No:
FGH40N60SFDTU
Manufacturer:
onsemi
Package:
Tube
Description:
IGBT FIELD STOP 600V 80A TO247-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FGH40N60SFDTU is a 600 V, 40 A Field Stop Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi. This device utilizes novel Field Stop IGBT technology, offering optimal performance for applications requiring low conduction and switching losses. It is particularly suited for automotive chargers, inverters, and other high-voltage auxiliary systems. The FGH40N60SFDTU is qualified to meet the stringent automotive requirements of AEC-Q101 and is Pb-free and RoHS compliant, ensuring environmental sustainability and reliability in harsh environments.

Key Specifications

Parameter Symbol Ratings Unit
Collector to Emitter Voltage VCES 600 V
Gate to Emitter Voltage VGES ±20 V
Transient Gate-to-Emitter Voltage ±30 V
Collector Current at TC = 25°C IC 80 A
Collector Current at TC = 100°C IC 40 A
Pulsed Collector Current at TC = 25°C ICM 120 A
Maximum Power Dissipation at TC = 25°C PD 290 W
Maximum Power Dissipation at TC = 100°C PD 116 W
Operating Junction Temperature TJ -55 to +150 °C
Storage Temperature Range Tstg -55 to +150 °C
Maximum Lead Temperature for Soldering TL 300 °C
Thermal Resistance, Junction-to-Case (IGBT) RθJC (IGBT) 0.43 °C/W
Thermal Resistance, Junction-to-Ambient RθJA 40 °C/W
Saturation Voltage at IC = 40 A, VGE = 15 V VCE(sat) 2.3 V
Turn-On Delay Time at VCC = 400 V, IC = 40 A td(on) 21 ns
Turn-Off Delay Time at VCC = 400 V, IC = 40 A td(off) 138 ns

Key Features

  • High Current Capability: The device can handle up to 40 A of collector current at 100°C and 80 A at 25°C.
  • Low Saturation Voltage: VCE(sat) of 2.3 V at IC = 40 A, ensuring low conduction losses.
  • High Input Impedance: Reduces the gate drive requirements.
  • Fast Switching: Fast turn-on and turn-off times minimize switching losses.
  • Automotive Qualification: Qualified to meet the automotive requirements of AEC-Q101.
  • Environmental Compliance: Pb-free and RoHS compliant.

Applications

  • Automotive Chargers and Converters: Ideal for high-efficiency charging systems.
  • Inverters and Power Factor Correction (PFC): Suitable for high-power inverter applications and PFC circuits.
  • High Voltage Auxiliaries: Used in various high-voltage auxiliary systems in automotive and industrial applications.
  • UPS Systems: Applicable in uninterruptible power supply systems where high reliability and efficiency are crucial.

Q & A

  1. What is the maximum collector to emitter voltage of the FGH40N60SFDTU?

    The maximum collector to emitter voltage (VCES) is 600 V.

  2. What is the maximum collector current at 25°C and 100°C?

    The maximum collector current is 80 A at 25°C and 40 A at 100°C.

  3. What is the typical saturation voltage at IC = 40 A and VGE = 15 V?

    The typical saturation voltage (VCE(sat)) is 2.3 V.

  4. Is the FGH40N60SFDTU qualified for automotive applications?

    Yes, it is qualified to meet the automotive requirements of AEC-Q101.

  5. What is the thermal resistance from junction to case for the IGBT?

    The thermal resistance from junction to case (RθJC) for the IGBT is 0.43 °C/W.

  6. What are the typical turn-on and turn-off delay times?

    The typical turn-on delay time (td(on)) is 21 ns, and the typical turn-off delay time (td(off)) is 138 ns.

  7. Is the FGH40N60SFDTU Pb-free and RoHS compliant?

    Yes, the device is Pb-free and RoHS compliant.

  8. What are the common applications of the FGH40N60SFDTU?

    Common applications include automotive chargers, inverters, PFC, UPS, and high-voltage auxiliaries.

  9. What is the maximum power dissipation at 25°C and 100°C?

    The maximum power dissipation is 290 W at 25°C and 116 W at 100°C.

  10. What is the operating junction temperature range?

    The operating junction temperature range is -55 to +150 °C.

Product Attributes

IGBT Type:Field Stop
Voltage - Collector Emitter Breakdown (Max):600 V
Current - Collector (Ic) (Max):80 A
Current - Collector Pulsed (Icm):120 A
Vce(on) (Max) @ Vge, Ic:2.9V @ 15V, 40A
Power - Max:290 W
Switching Energy:1.13mJ (on), 310µJ (off)
Input Type:Standard
Gate Charge:120 nC
Td (on/off) @ 25°C:25ns/115ns
Test Condition:400V, 40A, 10Ohm, 15V
Reverse Recovery Time (trr):45 ns
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-247-3
Supplier Device Package:TO-247-3
0 Remaining View Similar

In Stock

$4.88
119

Please send RFQ , we will respond immediately.

Similar Products

Part Number FGH40N60SFDTU FGH60N60SFDTU FGH40N60SFTU FGH40N60UFDTU FGH20N60SFDTU
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Obsolete Active Active
IGBT Type Field Stop Field Stop Field Stop Field Stop Field Stop
Voltage - Collector Emitter Breakdown (Max) 600 V 600 V 600 V 600 V 600 V
Current - Collector (Ic) (Max) 80 A 120 A 80 A 80 A 40 A
Current - Collector Pulsed (Icm) 120 A 180 A 120 A 120 A 60 A
Vce(on) (Max) @ Vge, Ic 2.9V @ 15V, 40A 2.9V @ 15V, 60A 2.9V @ 15V, 40A 2.4V @ 15V, 40A 2.8V @ 15V, 20A
Power - Max 290 W 378 W 290 W 290 W 165 W
Switching Energy 1.13mJ (on), 310µJ (off) 1.79mJ (on), 670µJ (off) 1.13mJ (on), 310µJ (off) 1.19mJ (on), 460µJ (off) 370µJ (on), 160µJ (off)
Input Type Standard Standard Standard Standard Standard
Gate Charge 120 nC 198 nC 120 nC 120 nC 65 nC
Td (on/off) @ 25°C 25ns/115ns 22ns/134ns 25ns/115ns 24ns/112ns 13ns/90ns
Test Condition 400V, 40A, 10Ohm, 15V 400V, 60A, 5Ohm, 15V 400V, 40A, 10Ohm, 15V 400V, 40A, 10Ohm, 15V 400V, 20A, 10Ohm, 15V
Reverse Recovery Time (trr) 45 ns 47 ns - 45 ns 34 ns
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3
Supplier Device Package TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3

Related Product By Categories

FGH40N60SMDF
FGH40N60SMDF
onsemi
IGBT FIELD STOP 600V 80A TO247-3
FGH60N60SFDTU
FGH60N60SFDTU
onsemi
IGBT FIELD STOP 600V 120A TO247
NGTB40N135IHRWG
NGTB40N135IHRWG
onsemi
IGBT TRENCH/FS 1350V 80A TO247
FGA25N120ANTDTU-F109
FGA25N120ANTDTU-F109
onsemi
IGBT 1200V 50A 312W TO3P
IKW75N65ES5XKSA1
IKW75N65ES5XKSA1
Infineon Technologies
IGBT TRENCH 650V 80A TO247-3
FGD3040G2-F085C
FGD3040G2-F085C
onsemi
ECOSPARK2 IGN-IGBT TO252
STGF20H60DF
STGF20H60DF
STMicroelectronics
IGBT 600V 40A 37W TO220FP
FGB3040G2-F085C
FGB3040G2-F085C
onsemi
ECOSPARK2 IGN-IGBT TO263
STGD20N40LZ
STGD20N40LZ
STMicroelectronics
IGBT 390V 25A 125W DPAK
STGW35HF60WD
STGW35HF60WD
STMicroelectronics
IGBT 600V 60A 200W TO-247
STGP20H60DF
STGP20H60DF
STMicroelectronics
IGBT 600V 40A 167W TO220
FGH40T65SQD_F155
FGH40T65SQD_F155
onsemi
650V FS4 TRENCH IGBT

Related Product By Brand

ESD9D5.0ST5G
ESD9D5.0ST5G
onsemi
TVS DIODE 5VWM 13.5VC SOD923
NRVBS240LT3G
NRVBS240LT3G
onsemi
DIODE SCHOTTKY 40V 2A SMB
MMSZ5267BT1G
MMSZ5267BT1G
onsemi
DIODE ZENER 75V 500MW SOD123
1SMB5934BT3G
1SMB5934BT3G
onsemi
DIODE ZENER 24V 3W SMB
MMSZ5221BT1G
MMSZ5221BT1G
onsemi
DIODE ZENER 2.4V 500MW SOD123
FDG6332C
FDG6332C
onsemi
MOSFET N/P-CH 20V SC70-6
MC74HC163ADR2G
MC74HC163ADR2G
onsemi
LOG CMOS COUNTER 4BIT SOIC16
MC74HC32ADTEL
MC74HC32ADTEL
onsemi
IC GATE OR 4CH 2-INP 14TSSOP
CAT24C512C8UTR
CAT24C512C8UTR
onsemi
IC EEPROM 512KBIT I2C 8WLCSP
NCP1015AP100G
NCP1015AP100G
onsemi
IC OFFLINE SWITCH FLYBACK 7DIP
CAT1021WI30
CAT1021WI30
onsemi
CAT1021 - SUPERVISORY CIRCUIT WI
UC2842BD
UC2842BD
onsemi
IC REG CTRLR PWM CM 14-SOIC