Overview
The FGH40N60UFD is a high-performance Field Stop Insulated Gate Bipolar Transistor (IGBT) produced by onsemi. This device is designed to offer optimal performance in various applications requiring low conduction and switching losses. Utilizing novel Field Stop IGBT technology, it is particularly suited for solar inverters, UPS systems, welders, microwave ovens, telecom equipment, Energy Storage Systems (ESS), and Power Factor Correction (PFC) applications.
Key Specifications
| Symbol | Description | Ratings | Unit |
|---|---|---|---|
| VCES | Collector to Emitter Voltage | 600 | V |
| VGES | Gate to Emitter Voltage | ±20 | V |
| IC | Collector Current (TC = 25°C) | 80 | A |
| IC (TC = 100°C) | Collector Current | 40 | A |
| ICM | Pulsed Collector Current (TC = 25°C) | 120 | A |
| PD | Maximum Power Dissipation (TC = 25°C) | 290 | W |
| TJ | Operating Junction Temperature | −55 to +150 | °C |
| TSTG | Storage Temperature Range | −55 to +150 | °C |
| TL | Maximum Lead Temperature for Soldering Purposes | 300 | °C |
| RθJC (IGBT) | Thermal Resistance, Junction to Case | 0.43 | °C/W |
| RθJA | Thermal Resistance, Junction to Ambient | 40 | °C/W |
| VGE(th) | Gate to Emitter Threshold Voltage | 4.0 - 6.5 | V |
| VCE(sat) | Collector to Emitter Saturation Voltage | 1.8 - 2.4 | V |
Key Features
- High Current Capability: The device can handle up to 80 A of collector current at 25°C and 40 A at 100°C.
- Low Saturation Voltage: VCE(sat) is as low as 1.8 V at IC = 40 A, reducing conduction losses.
- High Input Impedance: Ensures efficient gate control.
- Fast Switching: Fast turn-on and turn-off times, with turn-on delay time of 24 ns and turn-off delay time of 112 ns.
- Pb-Free and RoHS Compliant: Environmentally friendly and compliant with regulatory standards.
Applications
- Solar Inverters
- Uninterruptible Power Supplies (UPS)
- Welders
- Microwave Ovens
- Telecom Equipment
- Energy Storage Systems (ESS)
- Power Factor Correction (PFC)
Q & A
- What is the maximum collector to emitter voltage of the FGH40N60UFD IGBT?
The maximum collector to emitter voltage (VCES) is 600 V.
- What is the typical collector to emitter saturation voltage at 40 A?
The typical collector to emitter saturation voltage (VCE(sat)) is 1.8 V at IC = 40 A.
- What are the operating junction temperature limits for this IGBT?
The operating junction temperature range is from −55°C to +150°C.
- Is the FGH40N60UFD Pb-Free and RoHS compliant?
Yes, the device is Pb-Free and RoHS compliant.
- What are some typical applications for the FGH40N60UFD IGBT?
Typical applications include solar inverters, UPS systems, welders, microwave ovens, telecom equipment, ESS, and PFC.
- What is the maximum power dissipation at 25°C?
The maximum power dissipation at 25°C is 290 W.
- What is the thermal resistance from junction to case for the IGBT?
The thermal resistance from junction to case (RθJC) is 0.43 °C/W.
- What is the turn-on delay time at 25°C?
The turn-on delay time (Td(on)) is 24 ns at 25°C.
- What is the turn-off delay time at 25°C?
The turn-off delay time (Td(off)) is 112 ns at 25°C.
- What is the total gate charge at VGE = 15 V?
The total gate charge (Qg) is 120 nC at VGE = 15 V.
