Overview
The STGP10NC60HD is a high-performance Insulated Gate Bipolar Transistor (IGBT) produced by STMicroelectronics. This device is part of the STGP10NC60HD series, which includes various package options such as TO-220, D²PAK, DPAK, and TO-220FP. The STGP10NC60HD is designed using the advanced PowerMESH™ process, offering an excellent balance between switching performance and low on-state behavior.
This IGBT is characterized by its low on-voltage drop (VCE(sat)), low CRES / CIES ratio to prevent cross-conduction susceptibility, and a very soft ultra-fast recovery antiparallel diode. These features make it suitable for high-frequency applications and demanding power management scenarios.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-emitter voltage (VCE) | 600 | V |
| Collector current (continuous) at TC = 25 °C | 10 | A |
| Collector current (continuous) at TC = 100 °C | 6 | A |
| Gate-emitter voltage (VGE) | ±20 | V |
| Total dissipation at TC = 25 °C | 65 | W |
| Operating junction temperature (TJ) | -55 to 150 | °C |
| Collector-emitter saturation voltage (VCE(sat)) at VGE = 15 V, IC = 5 A | 1.7 - 2.5 | V |
| Gate threshold voltage (VGE(th)) | 3.75 - 5.75 | V |
| Turn-on delay time (td(on)) | 14.2 - 100 | ns |
| Turn-off delay time (td(off)) | 72 - 139 | ns |
Key Features
- Low on-voltage drop (VCE(sat)) for reduced power losses.
- Low CRES / CIES ratio to minimize cross-conduction susceptibility.
- Very soft ultra-fast recovery antiparallel diode for improved switching performance.
- High collector current capability up to 10 A at 25 °C and 6 A at 100 °C.
- Wide operating junction temperature range from -55 °C to 150 °C.
- High gate threshold voltage for robust gate control.
- Fast switching times with low turn-on and turn-off delays.
Applications
- High frequency motor controls.
- Switch Mode Power Supplies (SMPS) and Power Factor Correction (PFC) in both hard switch and resonant topologies.
- Motor drivers requiring high efficiency and fast switching.
Q & A
- What is the maximum collector-emitter voltage of the STGP10NC60HD IGBT?
The maximum collector-emitter voltage (VCE) is 600 V.
- What is the continuous collector current at 25 °C and 100 °C?
The continuous collector current is 10 A at 25 °C and 6 A at 100 °C.
- What is the gate-emitter voltage range?
The gate-emitter voltage (VGE) range is ±20 V.
- What is the total dissipation at 25 °C?
The total dissipation at 25 °C is 65 W.
- What is the operating junction temperature range?
The operating junction temperature range is from -55 °C to 150 °C.
- What are the typical turn-on and turn-off delay times?
The typical turn-on delay time is 14.2 ns, and the typical turn-off delay time is 72 ns.
- What are the key applications of the STGP10NC60HD IGBT?
The key applications include high frequency motor controls, SMPS and PFC, and motor drivers.
- What is the significance of the low CRES / CIES ratio?
The low CRES / CIES ratio minimizes cross-conduction susceptibility, improving the overall switching performance.
- What is the forward on-voltage of the antiparallel diode?
The forward on-voltage (VF) of the antiparallel diode is 1.7 to 2.45 V at IF = 5 A.
- What are the package options available for the STGP10NC60HD IGBT?
The package options include TO-220, D²PAK, DPAK, and TO-220FP.
