STGB10NC60HDT4
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STMicroelectronics STGB10NC60HDT4

Manufacturer No:
STGB10NC60HDT4
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
IGBT 600V 20A 65W D2PAK
Delivery:
Payment:
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Product Introduction

Overview

The STGB10NC60HDT4 is a high-performance Insulated Gate Bipolar Transistor (IGBT) produced by STMicroelectronics. This device is part of the STGB10NC60HD series and is known for its advanced PowerMESH™ process, which offers an excellent trade-off between switching performance and low on-state behavior. The STGB10NC60HDT4 is packaged in a D²PAK (TO-263) format and is designed for high-frequency applications, making it suitable for various power management and motor control systems.

Key Specifications

Parameter Value Unit
Collector-emitter voltage (VCE) 600 V
Collector current (continuous) at TC = 25 °C 10 A
Collector current (continuous) at TC = 100 °C 6 A
Gate-emitter voltage (VGE) ±20 V
Turn-off latching current (ICL) 30 A
Pulsed collector current (ICP) 30 A
Total dissipation at TC = 25 °C (PTOT) 65 W
Operating junction temperature (TJ) -55 to 150 °C
Collector-emitter saturation voltage (VCE(sat)) 1.7 - 2.5 V
Gate threshold voltage (VGE(th)) 3.75 - 5.75 V

Key Features

  • Low on-voltage drop (VCE(sat)): Ensures efficient operation with minimal energy loss.
  • Very soft ultra fast recovery antiparallel diode: Reduces switching losses and improves overall system efficiency.
  • Low CRES / CIES ratio: Minimizes cross-conduction susceptibility, enhancing reliability in high-frequency applications.
  • Advanced PowerMESH™ process: Offers a balanced performance between switching speed and low on-state behavior.

Applications

  • High frequency motor controls: Suitable for high-performance motor drive systems.
  • SMPS and PFC in both hard switch and resonant topologies: Ideal for power supply and power factor correction applications.
  • Motor drivers: Used in various motor control and drive systems requiring high efficiency and reliability.

Q & A

  1. What is the collector-emitter voltage rating of the STGB10NC60HDT4?

    The collector-emitter voltage (VCE) rating is 600 V.

  2. What is the continuous collector current at 25 °C and 100 °C?

    The continuous collector current is 10 A at 25 °C and 6 A at 100 °C.

  3. What is the gate-emitter voltage range?

    The gate-emitter voltage (VGE) range is ±20 V.

  4. What is the turn-off latching current?

    The turn-off latching current (ICL) is 30 A.

  5. What is the total dissipation at 25 °C?

    The total dissipation (PTOT) at 25 °C is 65 W.

  6. What is the operating junction temperature range?

    The operating junction temperature (TJ) range is -55 to 150 °C.

  7. What are the key features of the STGB10NC60HDT4?

    The key features include low on-voltage drop, very soft ultra fast recovery antiparallel diode, low CRES / CIES ratio, and the advanced PowerMESH™ process.

  8. In which applications is the STGB10NC60HDT4 commonly used?

    It is commonly used in high frequency motor controls, SMPS and PFC in both hard switch and resonant topologies, and motor drivers.

  9. What package type is the STGB10NC60HDT4 available in?

    The STGB10NC60HDT4 is available in a D²PAK (TO-263) package.

  10. What is the significance of the PowerMESH™ process in this IGBT?

    The PowerMESH™ process offers an excellent trade-off between switching performance and low on-state behavior, enhancing the overall efficiency and reliability of the device.

Product Attributes

IGBT Type:- 
Voltage - Collector Emitter Breakdown (Max):600 V
Current - Collector (Ic) (Max):20 A
Current - Collector Pulsed (Icm):30 A
Vce(on) (Max) @ Vge, Ic:2.5V @ 15V, 5A
Power - Max:65 W
Switching Energy:31.8µJ (on), 95µJ (off)
Input Type:Standard
Gate Charge:19.2 nC
Td (on/off) @ 25°C:14.2ns/72ns
Test Condition:390V, 5A, 10Ohm, 15V
Reverse Recovery Time (trr):22 ns
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:D2PAK
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Similar Products

Part Number STGB10NC60HDT4 STGB19NC60HDT4 STGB10NC60KDT4 STGD10NC60HDT4
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Obsolete
IGBT Type - - - -
Voltage - Collector Emitter Breakdown (Max) 600 V 600 V 600 V 600 V
Current - Collector (Ic) (Max) 20 A 40 A 20 A 20 A
Current - Collector Pulsed (Icm) 30 A 60 A 30 A 30 A
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 5A 2.5V @ 15V, 12A 2.5V @ 15V, 5A 2.5V @ 15V, 5A
Power - Max 65 W 130 W 65 W 62 W
Switching Energy 31.8µJ (on), 95µJ (off) 85µJ (on), 189µJ (off) 55µJ (on), 85µJ (off) 31.8µJ (on), 95µJ (off)
Input Type Standard Standard Standard Standard
Gate Charge 19.2 nC 53 nC 19 nC 19.2 nC
Td (on/off) @ 25°C 14.2ns/72ns 25ns/97ns 17ns/72ns 14.2ns/72ns
Test Condition 390V, 5A, 10Ohm, 15V 390V, 12A, 10Ohm, 15V 390V, 5A, 10Ohm, 15V 390V, 5A, 10Ohm, 15V
Reverse Recovery Time (trr) 22 ns 31 ns 22 ns 22 ns
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package D2PAK D2PAK D2PAK DPAK

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