FGH75T65UPD-F085
  • Share:

onsemi FGH75T65UPD-F085

Manufacturer No:
FGH75T65UPD-F085
Manufacturer:
onsemi
Package:
Tube
Description:
IGBT 650V 150A 375W TO-247AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FGH75T65UPD-F085, produced by onsemi, is a high-performance Field Stop Trench IGBT (Insulated Gate Bipolar Transistor) designed to offer optimum performance in various power conversion applications. This device leverages innovative field stop trench technology to minimize conduction and switching losses, making it ideal for solar inverters, UPS systems, welders, and digital power generators.

Key Specifications

ParameterSymbolTypical/Maximum ValueUnit
Collector to Emitter VoltageVCES650V
Gate to Emitter VoltageVGES±20V
Collector Current (TC = 25°C)IC150A
Collector Current (TC = 100°C)IC75A
Pulsed Collector CurrentICM225A
Maximum Power Dissipation (TC = 25°C)PD375W
Maximum Power Dissipation (TC = 100°C)PD187W
Operating Junction TemperatureTJ-55 to +175°C
Short Circuit Withstand TimeSCWT5 μsμs
Thermal Resistance, Junction to CaseRθJC(IGBT)0.40°C/W
Collector to Emitter Saturation VoltageVCE(sat)1.65 @ IC = 75 AV

Key Features

  • Maximum Junction Temperature: TJ = 175°C
  • Positive Temperature Coefficient for easy parallel operation
  • High current capability
  • Low saturation voltage: VCE(sat) = 1.65 V (Typ.) @ IC = 75 A
  • 100% of parts tested for ILM (Clamped Inductive Load Current)
  • High input impedance
  • Tightened parameter distribution
  • Short circuit ruggedness > 5 μs @ 25°C
  • Pb-free and RoHS compliant

Applications

  • Solar Inverters
  • UPS (Uninterruptible Power Supplies)
  • Welders
  • Digital Power Generators

Q & A

  1. What is the maximum collector to emitter voltage of the FGH75T65UPD-F085? The maximum collector to emitter voltage is 650 V.
  2. What is the typical collector to emitter saturation voltage at 75 A? The typical collector to emitter saturation voltage is 1.65 V.
  3. What is the maximum operating junction temperature? The maximum operating junction temperature is 175°C.
  4. Is the FGH75T65UPD-F085 Pb-free and RoHS compliant? Yes, it is Pb-free and RoHS compliant.
  5. What are the typical applications of the FGH75T65UPD-F085? Typical applications include solar inverters, UPS systems, welders, and digital power generators.
  6. What is the short circuit withstand time at 25°C? The short circuit withstand time is 5 μs.
  7. What is the thermal resistance from junction to case? The thermal resistance from junction to case is 0.40 °C/W.
  8. What is the maximum power dissipation at 25°C? The maximum power dissipation at 25°C is 375 W.
  9. What is the maximum collector current at 100°C? The maximum collector current at 100°C is 75 A.
  10. What is the typical gate to emitter threshold voltage? The typical gate to emitter threshold voltage is 6.0 V.

Product Attributes

IGBT Type:Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):650 V
Current - Collector (Ic) (Max):150 A
Current - Collector Pulsed (Icm):225 A
Vce(on) (Max) @ Vge, Ic:2.3V @ 15V, 75A
Power - Max:375 W
Switching Energy:2.85mJ (on), 1.2mJ (off)
Input Type:Standard
Gate Charge:578 nC
Td (on/off) @ 25°C:32ns/166ns
Test Condition:400V, 75A, 3Ohm, 15V
Reverse Recovery Time (trr):85 ns
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-247-3
Supplier Device Package:TO-247-3
0 Remaining View Similar

In Stock

$6.01
165

Please send RFQ , we will respond immediately.

Related Product By Categories

FGH80N60FD2TU
FGH80N60FD2TU
onsemi
IGBT 600V 80A 290W TO247
HGTG30N60A4D
HGTG30N60A4D
onsemi
IGBT 600V 75A 463W TO247
FGH60T65SQD-F155
FGH60T65SQD-F155
onsemi
IGBT TRENCH/FS 650V 120A TO247-3
STGB10NC60HDT4
STGB10NC60HDT4
STMicroelectronics
IGBT 600V 20A 65W D2PAK
NGTB25N120FL3WG
NGTB25N120FL3WG
onsemi
IGBT 1200V 100A TO247
NGTB75N65FL2WG
NGTB75N65FL2WG
onsemi
IGBT TRENCH/FS 650V 100A TO247
STGWA75H65DFB2
STGWA75H65DFB2
STMicroelectronics
TRENCH GATE FIELD-STOP, 650 V, 7
FGAF20N60SMD
FGAF20N60SMD
onsemi
IGBT FIELD STOP 600V 40A TO3PF
FGD3040G2_F085
FGD3040G2_F085
Fairchild Semiconductor
INSULATED GATE BIPOLAR TRANSISTO
IKW50N60T
IKW50N60T
Infineon Technologies
IKW50N60 - DISCRETE IGBT WITH AN
NGB8202NT4G
NGB8202NT4G
onsemi
IGBT 440V 20A 150W D2PAK
ISL9V5036S3ST_SB82170
ISL9V5036S3ST_SB82170
onsemi
INTEGRATED CIRCUIT

Related Product By Brand

NRVBD1035VCTLT4G
NRVBD1035VCTLT4G
onsemi
DIODE SCHOTTKY DPAK
MMSZ5221BT1G
MMSZ5221BT1G
onsemi
DIODE ZENER 2.4V 500MW SOD123
FDA28N50F
FDA28N50F
onsemi
MOSFET N-CH 500V 28A TO3PN
J113-D74Z
J113-D74Z
onsemi
JFET N-CH 35V 625MW TO92
NCV2904VDR2G
NCV2904VDR2G
onsemi
IC OPAMP GP 2 CIRCUIT 8SOIC
CAT24C16YI-GT3JN
CAT24C16YI-GT3JN
onsemi
IC EEPROM 16KBIT I2C 8TSSOP
ADP3110AKRZ
ADP3110AKRZ
onsemi
IC GATE DRVR HALF-BRIDGE 8SOIC
NCP1566MNTXG
NCP1566MNTXG
onsemi
IC PWM CTLR ACT CLAMP 24QFN
NCP103AMX180TCG
NCP103AMX180TCG
onsemi
IC REG LINEAR 1.8V 150MA 4UDFN
LM2931CTG
LM2931CTG
onsemi
IC REG LIN POS ADJ 100MA TO220-5
NCV4276CDS50R4G
NCV4276CDS50R4G
onsemi
IC REG LINEAR 5V 400MA D2PAK-5
MC33269DTRK-3.3
MC33269DTRK-3.3
onsemi
IC REG LDO 0.8A 3.3V DPAK