FGH75T65UPD-F085
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onsemi FGH75T65UPD-F085

Manufacturer No:
FGH75T65UPD-F085
Manufacturer:
onsemi
Package:
Tube
Description:
IGBT 650V 150A 375W TO-247AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FGH75T65UPD-F085, produced by onsemi, is a high-performance Field Stop Trench IGBT (Insulated Gate Bipolar Transistor) designed to offer optimum performance in various power conversion applications. This device leverages innovative field stop trench technology to minimize conduction and switching losses, making it ideal for solar inverters, UPS systems, welders, and digital power generators.

Key Specifications

ParameterSymbolTypical/Maximum ValueUnit
Collector to Emitter VoltageVCES650V
Gate to Emitter VoltageVGES±20V
Collector Current (TC = 25°C)IC150A
Collector Current (TC = 100°C)IC75A
Pulsed Collector CurrentICM225A
Maximum Power Dissipation (TC = 25°C)PD375W
Maximum Power Dissipation (TC = 100°C)PD187W
Operating Junction TemperatureTJ-55 to +175°C
Short Circuit Withstand TimeSCWT5 μsμs
Thermal Resistance, Junction to CaseRθJC(IGBT)0.40°C/W
Collector to Emitter Saturation VoltageVCE(sat)1.65 @ IC = 75 AV

Key Features

  • Maximum Junction Temperature: TJ = 175°C
  • Positive Temperature Coefficient for easy parallel operation
  • High current capability
  • Low saturation voltage: VCE(sat) = 1.65 V (Typ.) @ IC = 75 A
  • 100% of parts tested for ILM (Clamped Inductive Load Current)
  • High input impedance
  • Tightened parameter distribution
  • Short circuit ruggedness > 5 μs @ 25°C
  • Pb-free and RoHS compliant

Applications

  • Solar Inverters
  • UPS (Uninterruptible Power Supplies)
  • Welders
  • Digital Power Generators

Q & A

  1. What is the maximum collector to emitter voltage of the FGH75T65UPD-F085? The maximum collector to emitter voltage is 650 V.
  2. What is the typical collector to emitter saturation voltage at 75 A? The typical collector to emitter saturation voltage is 1.65 V.
  3. What is the maximum operating junction temperature? The maximum operating junction temperature is 175°C.
  4. Is the FGH75T65UPD-F085 Pb-free and RoHS compliant? Yes, it is Pb-free and RoHS compliant.
  5. What are the typical applications of the FGH75T65UPD-F085? Typical applications include solar inverters, UPS systems, welders, and digital power generators.
  6. What is the short circuit withstand time at 25°C? The short circuit withstand time is 5 μs.
  7. What is the thermal resistance from junction to case? The thermal resistance from junction to case is 0.40 °C/W.
  8. What is the maximum power dissipation at 25°C? The maximum power dissipation at 25°C is 375 W.
  9. What is the maximum collector current at 100°C? The maximum collector current at 100°C is 75 A.
  10. What is the typical gate to emitter threshold voltage? The typical gate to emitter threshold voltage is 6.0 V.

Product Attributes

IGBT Type:Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):650 V
Current - Collector (Ic) (Max):150 A
Current - Collector Pulsed (Icm):225 A
Vce(on) (Max) @ Vge, Ic:2.3V @ 15V, 75A
Power - Max:375 W
Switching Energy:2.85mJ (on), 1.2mJ (off)
Input Type:Standard
Gate Charge:578 nC
Td (on/off) @ 25°C:32ns/166ns
Test Condition:400V, 75A, 3Ohm, 15V
Reverse Recovery Time (trr):85 ns
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-247-3
Supplier Device Package:TO-247-3
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