FGH75T65UPD-F085
  • Share:

onsemi FGH75T65UPD-F085

Manufacturer No:
FGH75T65UPD-F085
Manufacturer:
onsemi
Package:
Tube
Description:
IGBT 650V 150A 375W TO-247AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FGH75T65UPD-F085, produced by onsemi, is a high-performance Field Stop Trench IGBT (Insulated Gate Bipolar Transistor) designed to offer optimum performance in various power conversion applications. This device leverages innovative field stop trench technology to minimize conduction and switching losses, making it ideal for solar inverters, UPS systems, welders, and digital power generators.

Key Specifications

ParameterSymbolTypical/Maximum ValueUnit
Collector to Emitter VoltageVCES650V
Gate to Emitter VoltageVGES±20V
Collector Current (TC = 25°C)IC150A
Collector Current (TC = 100°C)IC75A
Pulsed Collector CurrentICM225A
Maximum Power Dissipation (TC = 25°C)PD375W
Maximum Power Dissipation (TC = 100°C)PD187W
Operating Junction TemperatureTJ-55 to +175°C
Short Circuit Withstand TimeSCWT5 μsμs
Thermal Resistance, Junction to CaseRθJC(IGBT)0.40°C/W
Collector to Emitter Saturation VoltageVCE(sat)1.65 @ IC = 75 AV

Key Features

  • Maximum Junction Temperature: TJ = 175°C
  • Positive Temperature Coefficient for easy parallel operation
  • High current capability
  • Low saturation voltage: VCE(sat) = 1.65 V (Typ.) @ IC = 75 A
  • 100% of parts tested for ILM (Clamped Inductive Load Current)
  • High input impedance
  • Tightened parameter distribution
  • Short circuit ruggedness > 5 μs @ 25°C
  • Pb-free and RoHS compliant

Applications

  • Solar Inverters
  • UPS (Uninterruptible Power Supplies)
  • Welders
  • Digital Power Generators

Q & A

  1. What is the maximum collector to emitter voltage of the FGH75T65UPD-F085? The maximum collector to emitter voltage is 650 V.
  2. What is the typical collector to emitter saturation voltage at 75 A? The typical collector to emitter saturation voltage is 1.65 V.
  3. What is the maximum operating junction temperature? The maximum operating junction temperature is 175°C.
  4. Is the FGH75T65UPD-F085 Pb-free and RoHS compliant? Yes, it is Pb-free and RoHS compliant.
  5. What are the typical applications of the FGH75T65UPD-F085? Typical applications include solar inverters, UPS systems, welders, and digital power generators.
  6. What is the short circuit withstand time at 25°C? The short circuit withstand time is 5 μs.
  7. What is the thermal resistance from junction to case? The thermal resistance from junction to case is 0.40 °C/W.
  8. What is the maximum power dissipation at 25°C? The maximum power dissipation at 25°C is 375 W.
  9. What is the maximum collector current at 100°C? The maximum collector current at 100°C is 75 A.
  10. What is the typical gate to emitter threshold voltage? The typical gate to emitter threshold voltage is 6.0 V.

Product Attributes

IGBT Type:Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):650 V
Current - Collector (Ic) (Max):150 A
Current - Collector Pulsed (Icm):225 A
Vce(on) (Max) @ Vge, Ic:2.3V @ 15V, 75A
Power - Max:375 W
Switching Energy:2.85mJ (on), 1.2mJ (off)
Input Type:Standard
Gate Charge:578 nC
Td (on/off) @ 25°C:32ns/166ns
Test Condition:400V, 75A, 3Ohm, 15V
Reverse Recovery Time (trr):85 ns
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-247-3
Supplier Device Package:TO-247-3
0 Remaining View Similar

In Stock

$6.01
165

Please send RFQ , we will respond immediately.

Related Product By Categories

HGTD1N120BNS9A
HGTD1N120BNS9A
onsemi
IGBT 1200V 5.3A 60W TO252AA
STGW60V60DF
STGW60V60DF
STMicroelectronics
IGBT 600V 80A 375W TO247
STGB10NC60HDT4
STGB10NC60HDT4
STMicroelectronics
IGBT 600V 20A 65W D2PAK
STGF20M65DF2
STGF20M65DF2
STMicroelectronics
IGBT TRENCH 650V 40A TO220FP
STGW80H65DFB
STGW80H65DFB
STMicroelectronics
IGBT 650V 120A 469W TO-247
STGD6NC60HDT4
STGD6NC60HDT4
STMicroelectronics
IGBT 600V 15A 56W DPAK
STGWA40H65DFB
STGWA40H65DFB
STMicroelectronics
IGBT TRENCH 650V 80A TO247
FGY60T120SQDN
FGY60T120SQDN
onsemi
IGBT 1200V 60A UFS
STGB20H60DF
STGB20H60DF
STMicroelectronics
IGBT 600V 40A 167W D2PAK
FGAF20N60SMD
FGAF20N60SMD
onsemi
IGBT FIELD STOP 600V 40A TO3PF
IKW50N60TA
IKW50N60TA
Infineon Technologies
IKW50N60 - AUTOMOTIVE IGBT DISCR
NGTB40N65IHRTG
NGTB40N65IHRTG
onsemi
IGBT 650V 40A

Related Product By Brand

FFSH3065A
FFSH3065A
onsemi
650V 30A SIC SBD
NB3N502DR2G
NB3N502DR2G
onsemi
IC MULTIPLIER CLOCK PLL 8-SOIC
MC74HC4051ADWR2G
MC74HC4051ADWR2G
onsemi
IC MUX/DEMUX 8X1 16SOIC
PCA9654EDTR2G
PCA9654EDTR2G
onsemi
IC I/O EXPANDER 8BIT I2C 16TSSOP
MC14050BDTEL
MC14050BDTEL
onsemi
BUFFER, 6-FUNC
MC74HC245ADWR2
MC74HC245ADWR2
onsemi
IC BUS TRANSCVR 3-ST 8B 20SOIC
MC34161DMR2G
MC34161DMR2G
onsemi
IC SUPERVISOR 2 CHANNEL MICRO8
CAT811STBI-T3
CAT811STBI-T3
onsemi
IC SUPERVISOR 1 CHANNEL SOT143
LM2575D2T-5R4
LM2575D2T-5R4
onsemi
IC REG BUCK 5V 1A D2PAK-5
NCP160AMX330TBG
NCP160AMX330TBG
onsemi
IC REG LINEAR 3.3V 250MA 4XDFN
MC7808BTG
MC7808BTG
onsemi
IC REG LINEAR 8V 1A TO220AB
FOD817B3SD
FOD817B3SD
onsemi
OPTOISOLATOR 5KV TRANSISTOR 4SMD